KR0132425Y1 - Unload Indexer for Semiconductor Manufacturing Process - Google Patents
Unload Indexer for Semiconductor Manufacturing Process Download PDFInfo
- Publication number
- KR0132425Y1 KR0132425Y1 KR2019950040263U KR19950040263U KR0132425Y1 KR 0132425 Y1 KR0132425 Y1 KR 0132425Y1 KR 2019950040263 U KR2019950040263 U KR 2019950040263U KR 19950040263 U KR19950040263 U KR 19950040263U KR 0132425 Y1 KR0132425 Y1 KR 0132425Y1
- Authority
- KR
- South Korea
- Prior art keywords
- indexer
- unload
- nitrogen gas
- pipe
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
- H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
- H10P72/1924—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control
- H10P72/1926—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 고안에 의한 반도체 제조공정용 언로드엔덱서는 웨이퍼가 장착되는 카세트를 구비한 언로드 인덱서에 있어서, 상기 언로드 인덱서의 일측에 질소가스를 공급하는 질소가스 파이프를 설치하고, 상기 질소가스 파이프에 질소가스의 공급을 조절하는 가스밸브를 설치하며, 상기 질소가스 파이프와 연결하여 언로드 인덱서에 다운플로우 파이프를 설치하고, 상기 다운플로우 파이프에 질소가스를 유출하기 위한 다수개의 유출공을 형성함으로써, 질소 파이프로 유입된 가스는 압력차에 의해 가스출구로 유출되게 된다. 염소 화합물을 만드는 주된 원인이 대기중 수분이므로 수분을 제거하기 위해 질소 가스를 유입해 수분과 같이 밖으로 배출되도록 하므로서, 웨이퍼 위에 형성되는 염소화합물을 방지할수 있고, 언로드 인덱서(unload indexer)내를 청결하게 유지하여 파티클(particle)을 방지할수 있도록 하였다.In the unload indexer for a semiconductor manufacturing process according to the present invention, in an unload indexer having a cassette on which a wafer is mounted, a nitrogen gas pipe for supplying nitrogen gas to one side of the unload indexer is provided, and the nitrogen gas pipe is provided with nitrogen gas. Install a gas valve to control the supply of nitrogen, and connected to the nitrogen gas pipe to install the downflow pipe in the unload indexer, by forming a plurality of outflow holes for outflow of nitrogen gas in the downflow pipe, to the nitrogen pipe The introduced gas is discharged to the gas outlet by the pressure difference. Since the main cause of chlorine compounds is moisture in the atmosphere, nitrogen gas is introduced to remove moisture and discharged out as moisture, thereby preventing chlorine compounds formed on the wafer and cleaning the inside of the unload indexer. To prevent particles.
Description
제1도는 종래의 기술에 의한 카세트 언로드의 동작을 나타내는 동작도.1 is an operation diagram showing the operation of cassette unloading according to the prior art.
제2도는 종래의 기술에 의한 반도체 제조공정용 언로드 인덱서를 나타내는 사시도.2 is a perspective view showing an unload indexer for a semiconductor manufacturing process according to the prior art.
제3도는 본 고안에 의한 반도체 제조공정용 언로드 인덱서를 나타내는 평면도.3 is a plan view showing an unload indexer for a semiconductor manufacturing process according to the present invention.
제4도는 본 고안에 의한 반도체 제조공정용 언로드 인덱서를 나타내는 사시도.4 is a perspective view showing an unload indexer for a semiconductor manufacturing process according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
20 : 언로드 인덱스 21 : 질소가스 파이프20: unload index 21: nitrogen gas pipe
22 : 가스 밸브 23 : 다운플로우 파이프22 gas valve 23 downflow pipe
24 : 유출공24: outflow hole
본 고안은 질소유입을 통한 웨이퍼위의 염소 이물질 제거장치에 관한 것으로, 특히 질소 파이프로 유입된 가스는 압력차에 의해 가스출구로 유출되게 된다. 이렇게 함으로써 대기중 수분을 출구로 유출하게 된다. 염소 화합물을 만드는 주된 원인이 대기중 수분이므로 수분을 제거하기 위해 질소 가스를 유입해 수분과 같이 밖으로 배출되도록 하므로서, 웨이퍼 위에 형성되는 염소화합물을 방지할 수 있고, 언로드 인덱서(unloal indexer)내를 청결하게 유지하여 파티클(particle)을 방지할수 있도록 한 반도체 제조공정용 언로드인덱서에 관한 것이다.The present invention relates to a device for removing chlorine foreign matter on a wafer through nitrogen inflow, and in particular, the gas introduced into the nitrogen pipe is discharged to the gas outlet by the pressure difference. This causes the moisture in the air to flow out of the outlet. Since the main cause of chlorine compounds is moisture in the air, nitrogen gas is introduced to remove moisture and discharged out as moisture, thereby preventing chlorine compounds formed on the wafer and cleaning the inside of the unloal indexer. The present invention relates to an unload indexer for a semiconductor manufacturing process, which can maintain particles to prevent particles.
종래의 기술에 의한 장비의 구동은 제1도에 도시한 바와 같이, 웨이퍼가 챔버내에서 에치공정에 완료된후에 카세트(cassette)(1)가 있는 곳으로 반출되어 공정이 끝나는 것으로 되어 있다. 제2도에서와 같이, 공정이 완료된 웨이퍼는 웨이퍼 출구(2)를 통해 카세트 로드(3)위에 있는 카세트위에 장착이 되고 전 공정이 완료된후에 밖으로 분출되도록 되어 있다.The driving of the equipment according to the prior art is carried out to the place where the cassette 1 is located after the wafer has been etched in the chamber and finished as shown in FIG. As in FIG. 2, the finished wafer is mounted on the cassette on the cassette rod 3 via the wafer outlet 2 and ejected out after the entire process is completed.
도면중 미설명 부호 12는 도어를 나타낸다.In the drawing, reference numeral 12 denotes a door.
그러나, 이러한 종래의 기술에서는 카세트 언로드 인덱서(10)내에 공정완료된 웨이퍼가 장시간 정체됨으로써, 공정중 웨이퍼위에 잔류된 염소성 물질이 공기중의 수분과 결합해 염소화합물을 형성하게 된다. 이 화합물이 웨이퍼 위에 형성되면 공정수율 감소의 원인이 되어 물로 세탁을 하는 수세 공정을 거쳐야 하고, 장비 측벽에 형성되면 다분자 화합물 상태로 장비를 오염시켜 파티클의 원인이 되는 문제점이 있다.However, in such a conventional technique, the processed wafer in the cassette unload indexer 10 is stagnated for a long time, so that the chlorine material remaining on the wafer during the process combines with moisture in the air to form a chlorine compound. When the compound is formed on the wafer, the process yield is reduced, and the washing process is performed with water, and when the compound is formed on the sidewall of the device, the compound is contaminated with the multimolecular compound and causes particles.
따라서, 본 고안의 목적은 상기와 같은 문제점을 해결하기 위해 안출한 것으로, 질소 파이프로 유입된 가스는 압력차에 의해 가스출구로 유출되게 되며 이렇게 함으로써 대기중 수분을 출구로 유출하게 된다. 염소 화합물을 만드는 주된 원인이 대기중 수분이므로 수분을 제거하기 위해 질소 가스를 유입해 수분과 같이 밖으로 배출되도록 하므로서, 웨이퍼 위에 형성되는 염소화합물을 방지할수 있고, 언로드 인덱서(unload indexer)(10)내를 청결하게 유지하여 파티클(particle)을 방지할수 있도록 한 반도체 제조공정용 언로드인덱서를 제공함에 있다.Accordingly, an object of the present invention is to devise to solve the above problems, the gas introduced into the nitrogen pipe is discharged to the gas outlet by the pressure difference, and thereby the moisture in the air to the outlet. Since the main cause of chlorine compounds is moisture in the air, nitrogen gas is introduced to remove moisture to be discharged out as moisture, thereby preventing chlorine compounds formed on the wafer and in the unload indexer 10. The present invention provides an unload indexer for a semiconductor manufacturing process to keep particles clean to prevent particles.
이러한, 본 고안의 목적은 웨이퍼가 장착되는 카세트를 구비한 언로드 인덱서에 있어서, 상기 언로드 인덱서의 일측에 질소가스를 공급하는 질소가스 파이프를 설치하고, 상기 질소가스 파이프에 질소가스의 공급을 조절하는 가스밸브를 설치하며, 상기 질소가스 파이프와 연결하여 언로드 인덱서에 다운플로우 파이프를 설치하고, 상기 다운플로우 파이프에 질소가스를 유출하기 위한 다수개의 유출공을 형성함으로써 달성된다.The object of the present invention is to provide a nitrogen gas pipe for supplying nitrogen gas to one side of the unload indexer in a unload indexer having a cassette on which a wafer is mounted, and to control the supply of nitrogen gas to the nitrogen gas pipe. It is achieved by installing a gas valve, connecting with the nitrogen gas pipe, installing a downflow pipe in the unload indexer, and forming a plurality of outlet holes for outflow of nitrogen gas in the downflow pipe.
이하, 본 고안에 의한 반도체 제조공정용 언로드인덱서를 첨부도면에 도시한 실시예에 따라서 설명한다.Hereinafter, the unload indexer for a semiconductor manufacturing process according to the present invention will be described according to the embodiment shown in the accompanying drawings.
제3도는 본 고안에 의한 반도체 제조공정용 언로드 인덱서를 나타내는 평면도이고, 제4도는 본 고안에 의한 반도체 제조공정용 언로드 인덱서를 나타내는 사시도를 각각 보인 것이다.3 is a plan view showing an unload indexer for a semiconductor manufacturing process according to the present invention, and FIG. 4 is a perspective view showing an unload indexer for a semiconductor manufacturing process according to the present invention, respectively.
이에 도시한 바와 같이, 본 고안에 의한 반도체 제조공정용 언로 인덱서가 웨이퍼가 장착되는 카세트를 구비한 언로드 인덱서에 있어서, 상기 언로드 인덱서(20)의 일측에 질소가스를 공급하는 질소가스 파이프(21)를 설치하고, 상기 질소가스 파이프에 질소가스의 공급을 조절하는 가스밸브(22)를 설치하며, 상기 질소가스 파이프(21)와 연결하여 언로드 인덱서(2)에 다운플로우 파이프(23)를 설치하고, 상기 다운플로우 파이프에 질소가스를 유출하기 위한 다수개의 유출공(24)을 형성하여 구성된다.As shown in the drawing, in an unload indexer having a cassette on which an unload indexer for a semiconductor manufacturing process according to the present invention is mounted, a nitrogen gas pipe 21 for supplying nitrogen gas to one side of the unload indexer 20. Install the, and install the gas valve 22 to regulate the supply of nitrogen gas to the nitrogen gas pipe, in connection with the nitrogen gas pipe 21 to install the downflow pipe 23 to the unload indexer (2) It is configured to form a plurality of outflow holes 24 for outflowing nitrogen gas in the downflow pipe.
도면중 미설명 부호 25는 카세트 로드를 나타내고, 26은 도어를 나타내며, 27은 이그져스트 홀(exhaust hole)(27)을 나타낸다.In the figure, reference numeral 25 denotes a cassette rod, 26 denotes a door, and 27 denotes an exhaust hole 27.
이와 같이 구성된 본 고안에 의한 반도체 제조공정용 언로드인덱서의 질소가스 주입동작을 설명하면 다음과 같다.Referring to the nitrogen gas injection operation of the unload indexer for a semiconductor manufacturing process according to the present invention configured as described above are as follows.
본 고안은 카세트 언로드 인덱서(20)내에 질소가스 파이프(21)를 연결하여 주요장치와 접촉되는 것을 피해 모서리 부분에 형성한 다운플로우 파이프(23)를 통해 질소가스를 주입한다. 제4도와 같이 가스밸브(22)를 통해 질소가스 파이프로 유입된 질소가스는 상기 다운플로우 파이프(23) 표면에 나 있는 작은홀인 유출공(24)을 통해 언로드 인덱서(20)내부로 유입되게 된다.The present invention connects the nitrogen gas pipe 21 into the cassette unload indexer 20 and injects nitrogen gas through the downflow pipe 23 formed at the corner portion to avoid contact with the main apparatus. As shown in FIG. 4, nitrogen gas introduced into the nitrogen gas pipe through the gas valve 22 is introduced into the unload indexer 20 through the outlet hole 24, which is a small hole on the surface of the downflow pipe 23. .
이상에서 설명한 바와 같이, 본 고안에 의한 반도체 제조공정용 언로드인덱서는 웨이퍼가 장착되는 카세트를 구비한 언로드 인덱서에 있어서, 상기 언로드 인덱서의 일측에 질소가스를 공급하는 질소가스 파이프를 설치하고, 상기 질소가스 파이프에 질소가스의 공급을 조절하는 가스 밸브를 설치하며, 상기 질소가스 파이프와 연결하여 언로드 인덱서에 다운플로우 파이프를 설치하고, 상기 다운플로우 파이프에 질소가스를 유출하기 위한 다수개의 유출공을 형성함으로써, 질소 파이프로 유입된 가스는 압력차에 의해 가스출구로 유출되게 된다. 이렇게 함으로써 대기중 수분을 출구로 유출하게 된다. 염소 화합물을 만드는 주된 원인이 대기중 수분이므로 수분을 제거하기 위해 질소 가스를 유입해 수분과 같이 밖으로 배출되도록 하므로서, 웨이퍼 위에 형성되는 염소화합물을 방지할 수 있고, 언로드 인덱서(unload indexer)내를 청결하게 유지하여 파티클(particle)을 방지할수 있도록 한 효과가 있다.As described above, in the unload indexer for a semiconductor manufacturing process according to the present invention, in the unload indexer having a cassette on which a wafer is mounted, a nitrogen gas pipe for supplying nitrogen gas to one side of the unload indexer is provided, and the nitrogen A gas valve is provided to control the supply of nitrogen gas to the gas pipe, and a downflow pipe is installed in the unload indexer by connecting to the nitrogen gas pipe, and a plurality of outflow holes are formed to discharge the nitrogen gas into the downflow pipe. As a result, the gas introduced into the nitrogen pipe flows out to the gas outlet due to the pressure difference. This causes the moisture in the air to flow out of the outlet. Since the main cause of chlorine compounds is moisture in the atmosphere, nitrogen gas is introduced to remove moisture and discharged out as moisture, thereby preventing chlorine compounds formed on the wafer and cleaning the inside of the unload indexer. It is effective to keep particles in order to prevent particles.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950040263U KR0132425Y1 (en) | 1995-12-12 | 1995-12-12 | Unload Indexer for Semiconductor Manufacturing Process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950040263U KR0132425Y1 (en) | 1995-12-12 | 1995-12-12 | Unload Indexer for Semiconductor Manufacturing Process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970046829U KR970046829U (en) | 1997-07-31 |
| KR0132425Y1 true KR0132425Y1 (en) | 1999-02-01 |
Family
ID=19433377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019950040263U Expired - Lifetime KR0132425Y1 (en) | 1995-12-12 | 1995-12-12 | Unload Indexer for Semiconductor Manufacturing Process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0132425Y1 (en) |
-
1995
- 1995-12-12 KR KR2019950040263U patent/KR0132425Y1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR970046829U (en) | 1997-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6210481B1 (en) | Apparatus and method of cleaning nozzle and apparatus of processing substrate | |
| KR19980052484A (en) | Wafer Wet Processing Equipment | |
| KR102327873B1 (en) | Substrate drying chamber | |
| KR0132425Y1 (en) | Unload Indexer for Semiconductor Manufacturing Process | |
| KR20040013965A (en) | Process chamber of multi-chamber type | |
| JPH10223593A (en) | Single-wafer cleaning device | |
| US5937878A (en) | Apparatus for removing particles from a wafer and for cleaning the wafer | |
| KR20230106308A (en) | Chuck clean unit and transfer unit of final polishing apparatus including the same | |
| KR100608294B1 (en) | Spin dryer with wafer lift cleaning means and cleaning method of wafer lift | |
| KR200285964Y1 (en) | Semiconductor wafer etcher | |
| KR100799069B1 (en) | Wafer Etching Equipment and Etching Method | |
| KR102838925B1 (en) | Substrate procoessing device and substrate procoessing method | |
| KR100464389B1 (en) | Dry cleaner for wafer and method for cleaning wafer using the same | |
| KR200151993Y1 (en) | Discharging apparatus of impurity in filter box used deposition process for semiconductor device fabrication | |
| KR0130141Y1 (en) | Automatic cleaning system of deposition apparatus for semiconductor | |
| KR960007315Y1 (en) | Pure water supply nozzle | |
| KR100742965B1 (en) | Developing apparatus and developing method for semiconductor manufacturing | |
| KR200177287Y1 (en) | Etch Beth of Wet Station | |
| JPH11150091A (en) | Wet treatment vessel and liquid feeding method therefor | |
| KR200146687Y1 (en) | Anti-attaching contaminants apparatus of bellows for driving stage of reaction chamber for wafer etching | |
| KR100452919B1 (en) | nozzle device for manufacturing semiconductor | |
| KR0174990B1 (en) | Developing apparatus for semiconductor manufacturing equipment | |
| KR20010036103A (en) | Apparatus for pummping of reactive gas in load-lock chamber and method for thereof | |
| KR200195109Y1 (en) | Device for storing reticle of semiconductor | |
| KR20220021701A (en) | Substrate drying chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| UA0108 | Application for utility model registration |
St.27 status event code: A-0-1-A10-A12-nap-UA0108 |
|
| UA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-UA0201 |
|
| UG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-UG1501 |
|
| E701 | Decision to grant or registration of patent right | ||
| UE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-UE0701 |
|
| UR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-UR1002 Fee payment year number: 1 |
|
| REGI | Registration of establishment | ||
| UR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-UR0701 |
|
| UG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-UG1601 |
|
| UN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-UN2301 St.27 status event code: A-5-5-R10-R11-asn-UN2301 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 4 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 5 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 6 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 7 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 8 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 9 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 10 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 11 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20100825 Year of fee payment: 13 |
|
| UR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-UR1001 Fee payment year number: 13 |
|
| EXPY | Expiration of term | ||
| UC1801 | Expiration of term |
St.27 status event code: N-4-6-H10-H14-oth-UC1801 Not in force date: 20101213 Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |