KR100792017B1 - 도금처리유닛 - Google Patents
도금처리유닛 Download PDFInfo
- Publication number
- KR100792017B1 KR100792017B1 KR1020000066020A KR20000066020A KR100792017B1 KR 100792017 B1 KR100792017 B1 KR 100792017B1 KR 1020000066020 A KR1020000066020 A KR 1020000066020A KR 20000066020 A KR20000066020 A KR 20000066020A KR 100792017 B1 KR100792017 B1 KR 100792017B1
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- substrate
- plating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
Abstract
Description
Claims (32)
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- 하단에 안쪽으로 돌출하여 기판의 둘레 가장자리부에 접촉하여 기판을 유지하는 기판 유지부를 가지는 회전 자유로운 하우징과, 상기 하우징의 내부에 이 하우징과 일체로 회전하도록 수납되고, 기판의 둘레 가장자리부를 상기 기판 유지부와의 사이에서 끼워 유지하여 기판을 유지하는 기판누름체를 구비한 헤드부를 가지 는 것을 특징으로 하는 도금처리유닛.
- 제 13항에 있어서,상기 하우징 하부의 기판 유지부에는 복수의 공기뽑기구멍이 설치되어 있는 것을 특징으로 하는 도금처리유닛.
- 제 13항 또는 제 14항에 있어서,상기 기판누름체의 둘레 가장자리부에는 기판누름체의 하면에 기판을 착탈자유롭게 유지하는 척기구가 설치되어 있는 것을 특징으로 하는 도금처리유닛.
- 제 13항 또는 제 14항에 있어서,상기 하우징의 기판 유지부상에는 상기 기판유지부와 상기 기판누름체에 의하여 기판을 유지하였을 때 기판과 통전하는 캐소드전극용 접점이 배치되고, 상기 기판누름체의 바깥쪽에는 상기 기판누름체가 하강하였을 때 상기 캐소드전극용 접점과 접촉하여 급전하는 급전접점이 설치되는 것을 특징으로 하는 도금처리유닛.
- 내부에 기판누름체를 상하이동 자유롭게 수납하고 상기 기판누름체와의 사이에서 기판의 둘레 가장자리부를 끼워 유지하여 기판을 유지하는 기판유지부를 가지는 회전자유로운 하우징을 구비한 헤드부와,상기 헤드부의 아래쪽에 배치되고 상기 하우징으로 유지된 기판의 위치보다 도 높은 도금시의 액면과 낮은 기판수수시의 액면의 2개의 액면을 취하도록 도금액을 유지하는 도금처리조를 가지는 것을 특징으로 하는 도금처리유닛.
- 내부에 가압링을 상하이동 자유롭게 수납하고 상기 가압링과의 사이에서 기판의 둘레 가장자리부를 끼워 유지하여 기판을 유지하는 기판 유지부를 가지는 회전자유로운 하우징을 구비한 헤드부와,이 헤드부의 아래쪽에 배치되어 상기 하우징으로 유지된 기판의 위치보다도 높은 도금시의 액면과 낮은 기판수수시의 액면의 2개의 액면을 취하도록 도금액을 유지하는 도금처리조를 가지는 것을 특징으로 하는 도금처리유닛.
- 내부에 연직방향으로 요동자유로운 요동링크를 가지는 클램프기구를 수납하여 상기 요동링크와의 사이에서 기판의 둘레 가장자리부를 끼워 유지하여 기판을 유지하는 기판유지부를 가지는 회전자유로운 하우징을 구비한 헤드부와,상기 헤드부의 아래쪽에 배치되어 상기 하우징으로 유지된 기판의 위치보다도 높은 도금시의 액면과 낮은 기판수수시의 액면의 2개의 액면을 취하 도록 도금액을 유지하는 도금처리조를 가지는 것을 특징으로 하는 도금처리유닛.
- 내부에 공기압으로 탄성변형하는 팽창수축부재를 수납하여 이 팽창수축부재와의 사이에서 기판의 둘레 가장자리부를 끼워 유지하여 기판을 유지하는 기판 유지부를 가지는 회전자유로운 하우징을 구비한 헤드부와,상기 헤드부의 아래쪽에 배치되어 상기 하우징으로 유지된 기판의 위치보다도 높은 도금시의 액면과 낮은 기판수수시의 액면의 2개의 액면을 취하도록 도금액을 유지하는 도금처리조를 가지는 것을 특징으로 하는 도금처리유닛.
- 기판을 유지하는 기판 유지부를 가지는 회전자유로운 하우징을 구비한 헤드부와,상기 헤드부의 아래쪽에 배치되고, 적어도 2개의 액면을 취하도록 도금액을 유지하는 도금처리조를 가지는 것을 특징으로 하는 도금처리유닛.
- 제13항에 있어서,상기 헤드부의 아래쪽에 배치되어 도금액을 유지하는 도금처리조와,상기 기판유지부의 안 둘레끝의 기판과의 접촉부에 부착된 도금액을 제거하는 도금액 제거수단을 가지는 것을 특징으로 하는 도금처리유닛.
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- 제17항 내지 제21항 중 어느 한 항에 있어서,상기 기판유지부의 안 둘레끝의 기판과의 접촉부에 부착된 도금액을 제거하는 도금액 제거수단을 가지는 것을 특징으로 하는 도금처리유닛.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31676799 | 1999-11-08 | ||
| JP11-316767 | 1999-11-08 | ||
| JP2000-145682 | 2000-05-17 | ||
| JP2000145682 | 2000-05-17 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070067943A Division KR100827809B1 (ko) | 1999-11-08 | 2007-07-06 | 도금장치 및 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010051504A KR20010051504A (ko) | 2001-06-25 |
| KR100792017B1 true KR100792017B1 (ko) | 2008-01-04 |
Family
ID=26568799
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000066020A Expired - Lifetime KR100792017B1 (ko) | 1999-11-08 | 2000-11-08 | 도금처리유닛 |
| KR1020070067943A Expired - Fee Related KR100827809B1 (ko) | 1999-11-08 | 2007-07-06 | 도금장치 및 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070067943A Expired - Fee Related KR100827809B1 (ko) | 1999-11-08 | 2007-07-06 | 도금장치 및 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6660139B1 (ko) |
| EP (1) | EP1103639B1 (ko) |
| JP (2) | JP3883378B2 (ko) |
| KR (2) | KR100792017B1 (ko) |
| DE (1) | DE60035759T2 (ko) |
| TW (1) | TW564265B (ko) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3284496B2 (ja) * | 2000-08-09 | 2002-05-20 | 株式会社荏原製作所 | めっき装置及びめっき液除去方法 |
| JP2002220692A (ja) * | 2001-01-24 | 2002-08-09 | Ebara Corp | めっき装置及び方法 |
| US6908540B2 (en) * | 2001-07-13 | 2005-06-21 | Applied Materials, Inc. | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
| JP2003027280A (ja) * | 2001-07-18 | 2003-01-29 | Ebara Corp | めっき装置 |
| TW554069B (en) * | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
| US7690324B1 (en) * | 2002-06-28 | 2010-04-06 | Novellus Systems, Inc. | Small-volume electroless plating cell |
| DE10228998B4 (de) * | 2002-06-28 | 2004-05-13 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung und Verfahren zum elektrochemischen Behandeln eines Substrats bei reduzierter Metallkorrosion |
| EP1540044A2 (en) | 2002-06-28 | 2005-06-15 | Advanced Micro Devices, Inc. | Apparatus and method for treating a substrate electrochemically while reducing metal corrosion |
| US7285195B2 (en) | 2004-06-24 | 2007-10-23 | Applied Materials, Inc. | Electric field reducing thrust plate |
| KR100575111B1 (ko) * | 2004-06-29 | 2006-04-28 | 주식회사 티케이씨 | 도금기판의 로딩 및 언로딩장치 |
| AU2008316467A1 (en) * | 2007-10-24 | 2009-04-30 | Oc Oerlikon Balzers Ag | Method for manufacturing workpieces and apparatus |
| US8192605B2 (en) * | 2009-02-09 | 2012-06-05 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
| JP5274339B2 (ja) * | 2009-03-30 | 2013-08-28 | 大日本スクリーン製造株式会社 | 基板処理装置および基板搬送方法 |
| TWI398554B (zh) * | 2010-07-29 | 2013-06-11 | Zhen Ding Technology Co Ltd | 電鍍裝置 |
| TWI413708B (zh) * | 2010-08-20 | 2013-11-01 | Zhen Ding Technology Co Ltd | 電鍍裝置及電鍍方法 |
| JP5267526B2 (ja) * | 2010-09-24 | 2013-08-21 | 株式会社デンソー | めっき装置及びめっき方法 |
| JP5379773B2 (ja) | 2010-10-27 | 2013-12-25 | 東京エレクトロン株式会社 | めっき処理装置及びめっき処理方法並びにめっき処理プログラムを記録した記録媒体 |
| US9416459B2 (en) | 2011-06-06 | 2016-08-16 | United Microelectronics Corp. | Electrical chemical plating process |
| TWI496961B (zh) * | 2011-06-07 | 2015-08-21 | United Microelectronics Corp | 電化學電鍍步驟 |
| JP6018961B2 (ja) * | 2013-03-26 | 2016-11-02 | 株式会社荏原製作所 | めっき装置およびめっき方法 |
| JP6285199B2 (ja) * | 2014-02-10 | 2018-02-28 | 株式会社荏原製作所 | アノードホルダ及びめっき装置 |
| KR101843786B1 (ko) * | 2014-03-11 | 2018-03-30 | 가부시키가이샤 씽크. 라보라토리 | 모듈식 처리 유닛 및 이를 이용한 그라비아 실린더의 전자동 제조 시스템 |
| CN104368502B (zh) * | 2014-09-30 | 2017-03-08 | 西迪技术股份有限公司 | 硬面涂层加工装置 |
| JP6795915B2 (ja) * | 2016-06-10 | 2020-12-02 | 株式会社荏原製作所 | アノードに給電可能な給電体及びめっき装置 |
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| JP6971922B2 (ja) | 2018-06-27 | 2021-11-24 | 株式会社荏原製作所 | 基板ホルダ |
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| CN112853442A (zh) * | 2021-01-13 | 2021-05-28 | 杨木兰 | 一种半导体集成电路封装器件加工装置 |
| JP7128385B1 (ja) * | 2021-11-05 | 2022-08-30 | 株式会社荏原製作所 | めっき装置、及びめっき装置の製造方法 |
| US12195867B2 (en) * | 2021-11-30 | 2025-01-14 | Applied Materials, Inc. | Electrochemical deposition systems with enhanced crystallization prevention features |
| CN114173483B (zh) * | 2021-12-07 | 2024-04-05 | 吉安宏达秋科技有限公司 | 一种高性能电镀铜工艺 |
| CN116262983A (zh) * | 2021-12-14 | 2023-06-16 | 盛美半导体设备(上海)股份有限公司 | 电镀装置 |
| CN118900940A (zh) * | 2022-01-26 | 2024-11-05 | 应用材料公司 | 用于电镀系统中的气泡消除的涌流 |
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| KR20250019133A (ko) * | 2022-08-10 | 2025-02-07 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 홀더, 도금 장치 및 기판의 위치 결정 방법 |
| WO2025120721A1 (ja) * | 2023-12-05 | 2025-06-12 | 株式会社荏原製作所 | めっき装置 |
| WO2025186977A1 (ja) * | 2024-03-07 | 2025-09-12 | 株式会社荏原製作所 | めっき装置、及びめっき槽をアノード室とカソード室とに区画する方法 |
| WO2026009371A1 (ja) * | 2024-07-04 | 2026-01-08 | 株式会社荏原製作所 | めっき装置 |
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| US5092975A (en) * | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
| JPH0781197A (ja) * | 1993-09-17 | 1995-03-28 | Honda Motor Co Ltd | プリンタ |
| JPH10163208A (ja) * | 1996-11-28 | 1998-06-19 | Ind Technol Res Inst | 半導体基板上に極小スケールのCu相互接続金属を形成する方法及び装置 |
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| US5723387A (en) * | 1996-07-22 | 1998-03-03 | Industrial Technology Research Institute | Method and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substrates |
| JPH11154653A (ja) * | 1997-09-17 | 1999-06-08 | Ebara Corp | 基板メッキ装置 |
| TW405158B (en) * | 1997-09-17 | 2000-09-11 | Ebara Corp | Plating apparatus for semiconductor wafer processing |
| US7244677B2 (en) * | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
| JP3523197B2 (ja) * | 1998-02-12 | 2004-04-26 | エーシーエム リサーチ,インコーポレイティド | メッキ設備及び方法 |
| KR100597024B1 (ko) * | 1998-03-02 | 2006-07-04 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판의 도금장치 |
| US6197181B1 (en) * | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
| US6416647B1 (en) * | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
| US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
| US6136163A (en) * | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
| US6297155B1 (en) * | 1999-05-03 | 2001-10-02 | Motorola Inc. | Method for forming a copper layer over a semiconductor wafer |
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2000
- 2000-11-07 US US09/706,756 patent/US6660139B1/en not_active Expired - Lifetime
- 2000-11-08 KR KR1020000066020A patent/KR100792017B1/ko not_active Expired - Lifetime
- 2000-11-08 EP EP00124463A patent/EP1103639B1/en not_active Expired - Lifetime
- 2000-11-08 TW TW089123542A patent/TW564265B/zh not_active IP Right Cessation
- 2000-11-08 JP JP2000341014A patent/JP3883378B2/ja not_active Expired - Lifetime
- 2000-11-08 DE DE60035759T patent/DE60035759T2/de not_active Expired - Fee Related
-
2003
- 2003-10-16 US US10/685,460 patent/US20040089555A1/en not_active Abandoned
-
2006
- 2006-04-24 US US11/408,997 patent/US20060185976A1/en not_active Abandoned
- 2006-06-19 JP JP2006169344A patent/JP4229954B2/ja not_active Expired - Fee Related
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2007
- 2007-07-06 KR KR1020070067943A patent/KR100827809B1/ko not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5092975A (en) * | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
| JPH0781197A (ja) * | 1993-09-17 | 1995-03-28 | Honda Motor Co Ltd | プリンタ |
| JPH10163208A (ja) * | 1996-11-28 | 1998-06-19 | Ind Technol Res Inst | 半導体基板上に極小スケールのCu相互接続金属を形成する方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010051504A (ko) | 2001-06-25 |
| JP2002038297A (ja) | 2002-02-06 |
| JP3883378B2 (ja) | 2007-02-21 |
| DE60035759D1 (de) | 2007-09-13 |
| EP1103639A2 (en) | 2001-05-30 |
| TW564265B (en) | 2003-12-01 |
| JP4229954B2 (ja) | 2009-02-25 |
| EP1103639A3 (en) | 2004-11-24 |
| KR20070077506A (ko) | 2007-07-26 |
| JP2006241599A (ja) | 2006-09-14 |
| US20040089555A1 (en) | 2004-05-13 |
| KR100827809B1 (ko) | 2008-05-07 |
| US20060185976A1 (en) | 2006-08-24 |
| EP1103639B1 (en) | 2007-08-01 |
| DE60035759T2 (de) | 2008-04-30 |
| US6660139B1 (en) | 2003-12-09 |
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