KR102623402B1 - 진공 처리 장치 - Google Patents
진공 처리 장치 Download PDFInfo
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- KR102623402B1 KR102623402B1 KR1020217037321A KR20217037321A KR102623402B1 KR 102623402 B1 KR102623402 B1 KR 102623402B1 KR 1020217037321 A KR1020217037321 A KR 1020217037321A KR 20217037321 A KR20217037321 A KR 20217037321A KR 102623402 B1 KR102623402 B1 KR 102623402B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
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- H01L21/67155—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
- H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
도 2는 상기 진공 처리 장치(스퍼터링 장치)를 도시한 종단면도이다.
도 3은 연통관과 캐소드 유닛을 퇴피시킨 상태에서 도시한 상기 진공 처리 장치의 평면도이다.
도 4는 캐소드 유닛만을 퇴피시킨 상태에서 도시한 도 1에 대응하는 종단면도이다.
도 5는 연통관과 캐소드 유닛을 퇴피시킨 상태에서 도시한 도 1에 대응하는 종단면도이다.
Pc3… 처리 챔버(진공 챔버)
SM… 스퍼터링 장치(진공 처리 장치)
Sw… 기판(피처리 기판)
3… 연통관
5… 볼트(계합 수단, 체결 부재)
12… 설치 개구
41~44… 체결 블록 (계합 수단)
72… 회전축
74… 회동암
81… 돌기
82… 수용 요부
Claims (3)
- 피처리 기판의 처리면에 대하여 소정의 진공 처리를 하는 진공 처리 장치에 있어서,
피처리 기판이 설치되어 처리면이 향하는 방향을 상방으로 하고, 상벽에 처리면을 마주하는 설치 개구가 형성된 진공 챔버와 진공 처리를 하기 위한 처리 유닛과, 진공 챔버와 처리 유닛 사이에 개설되는 소정 길이의 연통관을 구비하고 진공 분위기의 진공 챔버 내 피처리 기판에 대하여 연통관을 통해 소정의 진공 처리를 하도록 구성되며,
처리 유닛에 상하 방향으로 직교하여 연장되는 회전축 주위에 요동하는 회동암이 연결되어 진공 챔버와 연통관을, 또는 처리 유닛과 연통관을 선택적으로 계합하는 계합 수단을 더 구비하고, 처리 유닛을, 또는 계합된 처리 유닛과 연통관을 회동암의 길이에 따른 거리만큼 진공 챔버로부터 이격시키고,
상기 회동암에 의해 상기 진공 챔버를 향해 상기 처리 유닛을 요동시키는 방향을 요동 방향 앞쪽 방향으로 하고, 이 요동 방향 앞쪽 방향 측에 위치시켜 상기 진공 챔버와 상기 연통관 중 어느 한쪽에 반구 형상의 돌기를 설치함과 동시에 상기 진공 챔버와 상기 연통관 중 어느 한쪽에 돌기를 수용하는 수용 요부가 형성되는 것을 특징으로 하는 진공 처리 장치. - 청구항 1에 있어서,
상기 계합 수단은 상기 처리 유닛, 상기 진공 챔버 및 상기 연통관의 외면에 각각 돌설되어, 상기 진공 챔버에 상기 연통관을 통해 처리 유닛을 조립한 상태에서 상하 방향으로 서로 대면하는 체결 블록과 서로 대면하는 각 체결 블록을 체결하는 체결 부재로 구성되는 것을 특징으로 하는 진공 처리 장치. - 삭제
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019134821 | 2019-07-22 | ||
| JPJP-P-2019-134821 | 2019-07-22 | ||
| PCT/JP2020/010586 WO2021014675A1 (ja) | 2019-07-22 | 2020-03-11 | 真空処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210153105A KR20210153105A (ko) | 2021-12-16 |
| KR102623402B1 true KR102623402B1 (ko) | 2024-01-11 |
Family
ID=74192685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217037321A Active KR102623402B1 (ko) | 2019-07-22 | 2020-03-11 | 진공 처리 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11891685B2 (ko) |
| EP (1) | EP4006195A4 (ko) |
| JP (1) | JP7212167B2 (ko) |
| KR (1) | KR102623402B1 (ko) |
| CN (1) | CN113994021B (ko) |
| TW (1) | TWI831953B (ko) |
| WO (1) | WO2021014675A1 (ko) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011253842A (ja) * | 2010-05-31 | 2011-12-15 | Tokyo Electron Ltd | 蓋体保持治具 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0555891B1 (en) * | 1985-10-24 | 1999-01-20 | Texas Instruments Incorporated | Vacuum processing system and method |
| JP3122617B2 (ja) * | 1996-07-19 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPH11140648A (ja) * | 1997-11-07 | 1999-05-25 | Tokyo Electron Ltd | プロセスチャンバ装置及び処理装置 |
| US6776848B2 (en) * | 2002-01-17 | 2004-08-17 | Applied Materials, Inc. | Motorized chamber lid |
| US7097744B2 (en) * | 2003-06-12 | 2006-08-29 | Applied Materials, Inc. | Method and apparatus for controlling darkspace gap in a chamber |
| TWI267917B (en) * | 2004-02-24 | 2006-12-01 | Advanced Display Proc Eng Co | Apparatus for manufacturing flat-panel display |
| JP4246654B2 (ja) * | 2004-03-08 | 2009-04-02 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
| US20060071384A1 (en) * | 2004-10-06 | 2006-04-06 | Advanced Display Process Engineering Co. Ltd. | Apparatus for manufacturing flat-panel display |
| CN2830419Y (zh) * | 2005-07-06 | 2006-10-25 | 中国电子科技集团公司第四十八研究所 | 分体式金属有机物化学气相淀积反应器 |
| JP2010162611A (ja) | 2009-01-13 | 2010-07-29 | Ulvac Japan Ltd | 相対ティーチング方法 |
| JP6960737B2 (ja) * | 2017-01-23 | 2021-11-05 | 株式会社日立ハイテク | 真空処理装置 |
| WO2019021519A1 (ja) * | 2017-07-25 | 2019-01-31 | 株式会社アルバック | スパッタリング装置用のカソードユニット |
| CN111094618B (zh) * | 2017-09-07 | 2022-06-17 | 株式会社爱发科 | 溅射装置 |
-
2020
- 2020-03-11 KR KR1020217037321A patent/KR102623402B1/ko active Active
- 2020-03-11 US US17/433,140 patent/US11891685B2/en active Active
- 2020-03-11 EP EP20842937.3A patent/EP4006195A4/en not_active Withdrawn
- 2020-03-11 CN CN202080042799.4A patent/CN113994021B/zh active Active
- 2020-03-11 JP JP2021534530A patent/JP7212167B2/ja active Active
- 2020-03-11 WO PCT/JP2020/010586 patent/WO2021014675A1/ja not_active Ceased
- 2020-03-23 TW TW109109560A patent/TWI831953B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011253842A (ja) * | 2010-05-31 | 2011-12-15 | Tokyo Electron Ltd | 蓋体保持治具 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220154324A1 (en) | 2022-05-19 |
| JPWO2021014675A1 (ja) | 2021-12-23 |
| JP7212167B2 (ja) | 2023-01-24 |
| CN113994021B (zh) | 2023-12-01 |
| EP4006195A4 (en) | 2023-07-12 |
| TW202113111A (zh) | 2021-04-01 |
| CN113994021A (zh) | 2022-01-28 |
| EP4006195A1 (en) | 2022-06-01 |
| KR20210153105A (ko) | 2021-12-16 |
| WO2021014675A1 (ja) | 2021-01-28 |
| US11891685B2 (en) | 2024-02-06 |
| TWI831953B (zh) | 2024-02-11 |
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