KR102762995B1 - 10 nm 이하 패터닝을 위한 블록 공중합체 - Google Patents
10 nm 이하 패터닝을 위한 블록 공중합체 Download PDFInfo
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Abstract
Description
도 1에는 이블록(A-b-B) 공중합체에서 블록(A)의 부피 분율(f)의 함수로서 χΝ의 예시 그래프가 도시된다.
도 2에는 평행 및 수직의 실린더형 및 라멜라형을 포함하는 블록 공중합체의 다양한 유형의 배향 제어가 도시된다.
도 3은 호모중합체, 랜덤 중합체 및 블록 중합체 간의 차이를 나타내는 개략도이다.
도 4에는 탑 코트의 중요도 및 어닐링 동안 배향 제어에 영향을 주는 것과 관련된 이의 중요도를 나타내는 그림이 도시된다.
도 5에는 블록 공중합체 단량체의 변화가 카이(χ) 값을 변화시키는 것이 도시된다.
도 6에는 극성 용매의 존재 하에서의 블록 손실로 예시된 바와 같이 스핀 코팅이 극성 블록을 용해시킬 수 있으므로 극성 블록 용해도가 어떻게 탑 코트의 도포를 방지할 수 있는지가 도시된다.
도 7은 5-비닐벤조[d][1,3]디옥솔의 합성식의 일 실시양태를 도시하는 개략도이다.
도 8에는 폴리(5-비닐벤조[d][1,3]디옥솔-블록-4-펜타메틸디실릴스티렌)의 합성이 도시된다.
도 9에는 블록 공중합체의 합성식이 도시된다.
도 10에는 폴리(5-비닐벤조[d][1,3]디옥솔-블록-4-펜타메틸-디실릴스티렌) 블록 공중합체가 극성 용매 노출 손실에 내성이 있다는 것이 도시된다.
도 11에는 블록 공중합체의 50 Å 선 및 공간이 도시된다. 이는 비트 패턴화된 매체에 대한 씨게이트(Seagate) 요건에 부합된다.
도 12에는 에칭 후 수직으로 배향된 라멜라가 도시된다. 정렬 제어 - 닐리(Nealey), 러셀(Russell), 로스(Ross) 등에 의해 기술된 유도 자기 조립(DSA)[1, 2].
도 13에는 50 Å에서 그래포에피택시 정렬이 도시된다.
도 14에는 더 두꺼운 수직 블록 공중합체 코팅 가이드가 도시된다.
Claims (12)
- 폭 10 nm 이하 나노구조체를 형성하기 위한 조성물로서,
5-비닐벤조[d][1,3]디옥솔을 포함하는 블록 공중합체를 포함하고,
상기 블록 공중합체는 펜타메틸디실릴스티렌을 더 포함하는 것인 조성물. - 제1항에 있어서, 상기 블록 공중합체는 층상 구조체의 일부인 조성물.
- 삭제
- 삭제
- 제1항에 있어서, 상기 블록 공중합체는 폴리(5-비닐벤조[d][1,3]디옥솔)-b-폴리(펜타메틸디실릴스티렌)인 조성물.
- 블록 공중합체 필름 내에 폭 10 nm 이하 나노구조체를 실현하는 방법으로서,
a) 블록 공중합체 필름을 기판 상에 코팅하는 단계로서, 블록 공중합체는 5-비닐벤조[d][1,3]디옥솔을 포함하는 단계; b) 블록 공중합체의 탑 상에 탑 코트를 도포하는 단계, 및 c) 상기 블록 공중합체 필름 내에 폭 10 nm 이하 나노구조체가 형성되도록 하는 조건 하에 어닐링시키는 단계를 포함하는 방법. - 삭제
- 제6항에 있어서, 상기 나노구조체는 라멜라형 나노구조체인 방법.
- 제6항에 있어서, 상기 나노구조체는 실린더형 나노구조체인 방법.
- 제6항에 있어서, d) 에칭에 의해 탑 코트 및 블록 공중합체의 일부를 제거하여 상기 나노구조체가 드러나도록 하는 단계를 추가로 포함하는 방법.
- 층상 구조체를 형성시키는 방법으로서, a) 표면, 표면 처리 층, 5-비닐벤조[d][1,3]디옥솔을 포함하는 블록 공중합체 및 탑 코트 조성물을 제공하는 단계; b) 상기 표면을 상기 표면 처리 층으로 처리하여 상기 표면 상에 제1 층을 형성시키는 단계; c) 상기 제1 층을 블록 공중합체로 코팅하여 상기 표면 상에 블록 공중합체 필름을 포함하는 제2 층을 형성시키는 단계; 및 d) 상기 제2 층을 상기 탑 코트 조성물로 코팅하여 상기 표면 상에 제3 층을 형성시키는 단계로서, 상기 제3 층은 상기 블록 공중합체 필름 표면 상에 탑 코트를 포함하고, 상기 제1 층, 제2 층 및 제3 층은 층상 구조체를 포함하는 것인 단계를 포함하는 방법.
- 5-비닐벤조[d][1,3]디옥솔을 포함한 블록 공중합체를 포함하는 폭 10 nm 이하 나노구조체로서, 상기 폭 10 nm 이하 나노구조체는 블록 공중합체 필름 내에 존재하는 것인 나노 구조체.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662298628P | 2016-02-23 | 2016-02-23 | |
| US62/298,628 | 2016-02-23 | ||
| PCT/US2017/018944 WO2017147185A1 (en) | 2016-02-23 | 2017-02-22 | Block copolymers for sub-10 nm patterning |
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| Publication Number | Publication Date |
|---|---|
| KR20180119163A KR20180119163A (ko) | 2018-11-01 |
| KR102762995B1 true KR102762995B1 (ko) | 2025-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1020187026457A Active KR102762995B1 (ko) | 2016-02-23 | 2017-02-22 | 10 nm 이하 패터닝을 위한 블록 공중합체 |
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| Country | Link |
|---|---|
| US (1) | US10239982B2 (ko) |
| JP (1) | JP7061799B2 (ko) |
| KR (1) | KR102762995B1 (ko) |
| CN (1) | CN109153760B (ko) |
| WO (1) | WO2017147185A1 (ko) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016080972A1 (en) * | 2014-11-18 | 2016-05-26 | Seagate Technology Llc | Methods and apparatuses for directed self-assembly |
| WO2020017494A1 (ja) * | 2018-07-17 | 2020-01-23 | 日産化学株式会社 | 微細相分離パターン形成のためのブロックコポリマー層形成組成物 |
| JP7823491B2 (ja) * | 2022-05-10 | 2026-03-04 | 三洋化成工業株式会社 | 高分子材料、自己組織化膜、自己組織化膜の製造方法、パターン及びパターンの形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013041140A (ja) | 2011-08-17 | 2013-02-28 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
| KR101525191B1 (ko) | 2013-12-27 | 2015-06-03 | 재단법인 포항산업과학연구원 | 블록 공중합체의 나노 구조체 제조 방법 및 이를 통해 제조된 블록 공중합체의 나노 구조체 |
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| US4450224A (en) * | 1983-07-06 | 1984-05-22 | Eastman Kodak Company | Polymeric mordants |
| JP3433564B2 (ja) * | 1995-04-12 | 2003-08-04 | 信越化学工業株式会社 | 高分子化合物及び化学増幅型ポジ型レジスト組成物 |
| JP3673179B2 (ja) | 2001-02-16 | 2005-07-20 | 株式会社東芝 | パターン形成方法 |
| US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
| WO2011116223A1 (en) * | 2010-03-18 | 2011-09-22 | Board Of Regents The University Of Texas System | Silicon-containing block co-polymers, methods for synthesis and use |
| CN102385254B (zh) * | 2010-09-01 | 2013-03-06 | 达兴材料股份有限公司 | 感光树脂组合物 |
| EP2736931A1 (en) | 2011-07-29 | 2014-06-04 | Wisconsin Alumni Research Foundation | Block copolymer materials for directed assembly of thin films |
| WO2013119820A1 (en) * | 2012-02-10 | 2013-08-15 | Board Of Regents, The University Of Texas System | Polyactide/silicon-containing block copolymers for nanolithography |
| CN104321700B (zh) * | 2012-02-10 | 2018-07-03 | 得克萨斯大学体系董事会 | 使用化学气相沉积膜控制嵌段共聚物薄膜中的域取向 |
| TWI658055B (zh) | 2013-06-19 | 2019-05-01 | 德州大學董事會 | 用於薄膜嵌段共聚物之定向控制之酸酐共聚物面塗層 |
| US9587136B2 (en) | 2013-10-08 | 2017-03-07 | Wisconsin Alumni Research Foundation | Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography |
| JP6356096B2 (ja) * | 2014-06-27 | 2018-07-11 | ダウ グローバル テクノロジーズ エルエルシー | ブロックコポリマーを製造するための方法およびそれから製造される物品 |
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- 2017-02-22 CN CN201780012875.5A patent/CN109153760B/zh not_active Expired - Fee Related
- 2017-02-22 US US15/439,604 patent/US10239982B2/en active Active
- 2017-02-22 WO PCT/US2017/018944 patent/WO2017147185A1/en not_active Ceased
- 2017-02-22 JP JP2018544221A patent/JP7061799B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013041140A (ja) | 2011-08-17 | 2013-02-28 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
| KR101525191B1 (ko) | 2013-12-27 | 2015-06-03 | 재단법인 포항산업과학연구원 | 블록 공중합체의 나노 구조체 제조 방법 및 이를 통해 제조된 블록 공중합체의 나노 구조체 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180119163A (ko) | 2018-11-01 |
| US10239982B2 (en) | 2019-03-26 |
| JP2019507815A (ja) | 2019-03-22 |
| CN109153760A (zh) | 2019-01-04 |
| US20170240681A1 (en) | 2017-08-24 |
| JP7061799B2 (ja) | 2022-05-02 |
| CN109153760B (zh) | 2021-10-29 |
| WO2017147185A1 (en) | 2017-08-31 |
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