KR200169727Y1 - Shower head structure of semiconductor oxide film deposition equipment - Google Patents
Shower head structure of semiconductor oxide film deposition equipment Download PDFInfo
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- KR200169727Y1 KR200169727Y1 KR2019970022532U KR19970022532U KR200169727Y1 KR 200169727 Y1 KR200169727 Y1 KR 200169727Y1 KR 2019970022532 U KR2019970022532 U KR 2019970022532U KR 19970022532 U KR19970022532 U KR 19970022532U KR 200169727 Y1 KR200169727 Y1 KR 200169727Y1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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Abstract
본 고안은 반도체 산화막 증착장비의 샤워헤드구조에 관한 것으로, 종래에는 공급되는 공정가스가 배출되며 웨이퍼의 중앙부 보다 가장자리에 많은 증착이 이루어져 증착막의 두께 균일도를 저하시키는 문제점이 있었다. 본 고안 반도체 산화막 증착장비의 샤워헤드구조는 몸체(11)에 형성되어 있는 다수개의 가스분사공(12)을 중앙부를 향하도록 하향경사지게 형성하여, 웨이퍼의 중앙부에 많이 공급된 가스중 일부가 배출되며 웨이퍼의 가장자리에 증착되도록 함으로서, 전체적인 증착막의 두께가 균일하게 형성되어 두께 균일도를 향상시키는 효과가 있다.The present invention relates to a showerhead structure of a semiconductor oxide film deposition apparatus, conventionally has a problem that the process gas is supplied is discharged and the deposition is much more at the edge than the center of the wafer to reduce the thickness uniformity of the deposited film. The shower head structure of the inventive semiconductor oxide film deposition apparatus is formed to be inclined downward to the center portion of the plurality of gas injection holes 12 formed in the body 11, some of the gas supplied to the central portion of the wafer is discharged By being deposited at the edge of the wafer, the overall thickness of the deposited film is formed uniformly, thereby improving the thickness uniformity.
Description
본 고안은 반도체 산화막 증착장비의 샤워헤드구조에 관한 것으로, 특히 증착되는 산화막의 두께 균일도를 향상시키도록 하는데 적합한 반도체 산화막 증착장비의 샤워헤드구조에 관한 것이다.The present invention relates to a showerhead structure of a semiconductor oxide film deposition equipment, and more particularly to a showerhead structure of a semiconductor oxide film deposition equipment suitable for improving the thickness uniformity of the oxide film is deposited.
일반적으로 반도체 웨이퍼 제조공정 중 산화막형성공정에서는 증착장비를 이용하여 일정 두께의 산화막을 형성하게 되는데, 이와 같은 산화막형성공정에서 사용되는 증착장비가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, in the oxide film forming process of the semiconductor wafer manufacturing process, an oxide film having a predetermined thickness is formed by using a deposition apparatus. The deposition apparatus used in the oxide film forming process is illustrated in FIG. 1. same.
도 1은 종래 반도체 산화막증착장비의 구조를 보인 사시도로서, 도시된 바와 같이, 종래 산화막증착장치는 공정 챔버(1)의 상부에는 힌지(2)에 의하여 복개가능토록 챔버리드(3)가 설치되어 있고, 상기 챔버(1)의 내측에는 웨이퍼(W)를 안착시키기 위한 서셉터(4)가 설치되어 있으며, 상기 챔버리드(3)의 하면에는 샤워헤드(5)가 부착되어 있어서, 상기 챔버리드(3)의 상면에 설치되어 있는 가스피드스루(미도시)를 통하여 공급된 가스가 샤워헤드(5)의 통하여 웨이퍼(W)의 상면에 분사될 수 있도록 구성되어 있다.1 is a perspective view showing the structure of a conventional semiconductor oxide film deposition apparatus, as shown, the conventional oxide film deposition apparatus is provided with a chamber lid (3) to be covered by a hinge (2) on the upper portion of the process chamber (1) A susceptor 4 for mounting the wafer W is provided inside the chamber 1, and a shower head 5 is attached to the lower surface of the chamber lid 3 so that the chamber lead is provided. It is comprised so that the gas supplied through the gas feedthrough (not shown) provided in the upper surface of (3) may be injected to the upper surface of the wafer W via the shower head 5.
도 2는 종래 샤워헤드의 구조를 보인 단면도이고, 도 3은 종래 샤워헤드의 구조를 보인 평면도로서, 도시된 바와 같이, 원형의 몸체(5a)와, 그 몸체(5a)의 상,하방향으로 형성되어 있는 다수개의 가스분사공(5a')으로 구성되어 있다.2 is a cross-sectional view showing the structure of a conventional shower head, Figure 3 is a plan view showing the structure of a conventional shower head, as shown, the circular body (5a), and the upper and lower directions of the body (5a) It consists of the several gas injection hole 5a 'formed.
상기와 같이 구성되어 있는 종래 반도체 산화막 증착장비의 동작을 설명하면 다음과 같다.Referring to the operation of the conventional semiconductor oxide film deposition equipment is configured as described above are as follows.
먼저, 챔버리드(3)가 오픈된 상태에서 챔버(1)의 내측에 설치되어 있는 서셉터(4)의 상면에 웨이퍼(W)를 안착시킨다. 그런 다음, 챔버리드(3)로 챔버(1)의 상부를 복개한다. 그런 다음, 상기 챔버리드(3)의 상면에 설치되어 있는 가스피드스루(미도시)를 통하여 공정가스를 공급하여 샤워헤드(5)를 통하여 웨이퍼(W)의 상부에 공정가스가 분사되도록 한다. 이와 같은 상태에서 챔버(1)의 내측에 플라즈마를 형성하면 웨이퍼(W)의 상면에 일정 두께의 산화막이 증착되게 된다.First, the wafer W is seated on the upper surface of the susceptor 4 provided inside the chamber 1 in a state where the chamber lid 3 is opened. Then, the upper part of the chamber 1 is covered with the chamber lid 3. Then, the process gas is supplied through a gas feedthrough (not shown) installed on the upper surface of the chamber lid 3 so that the process gas is injected onto the wafer W through the shower head 5. In this state, when the plasma is formed inside the chamber 1, an oxide film having a predetermined thickness is deposited on the upper surface of the wafer W.
그러나, 상기와 같은 종래 반도체 산화막 증착장비에서는 샤워헤드(5)의 몸체(5a)에 형성되어 있는 다수개의 가스분사공(5a')이 일정간격으로 다수개 형성되어 있음에도 불구하고, 도 4에 도시된 바와 같이 공정가스가 배출시 웨이퍼(W)의 가장자리로 이동하고, 모든 히팅기구가 웨이퍼(W)의 측방에 존재하기 때문에 증착막(6)은 중앙부 보다 가장자리가 두껍게 증착되어 두께 균일도의 향상에 한계가 있는 문제점이 있었다.However, in the conventional semiconductor oxide film deposition apparatus as described above, although a plurality of gas injection holes 5a 'formed in the body 5a of the shower head 5 are formed at regular intervals, it is shown in FIG. As the process gas is discharged to the edge of the wafer (W) when discharged, and all the heating mechanism is located on the side of the wafer (W), the deposition film 6 is deposited with a thicker edge than the center portion to limit the improvement in thickness uniformity There was a problem with that.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 웨이퍼의 가장자리 보다 중앙부에 많은 공정가스가 공급되도록 하여 웨이퍼에 증착되는 산화막이 일정두께로 증착되도록 하는데 적합한 반도체 산화막 증착장비의 샤워헤드구조를 제공함에 있다.The object of the present invention devised in view of the above problems is to provide a showerhead structure of a semiconductor oxide film deposition apparatus suitable for the deposition of the oxide film deposited on the wafer to a certain thickness by supplying a lot of process gas in the center than the edge of the wafer. Is in.
도 1은 종래 반도체 산화막증착장비의 구조를 보인 사시도.1 is a perspective view showing the structure of a conventional semiconductor oxide film deposition equipment.
도 2는 종래 샤워헤드의 구조를 보인 단면도.Figure 2 is a cross-sectional view showing the structure of a conventional shower head.
도 3은 종래 샤워헤드의 구조를 보인 평면도.3 is a plan view showing the structure of a conventional shower head.
도 4는 종래 증착공정이 진행되는 상태를 개략적으로 보인 단면도.Figure 4 is a schematic cross-sectional view showing a state in which a conventional deposition process is in progress.
도 5는 본 고안 반도체 산화막 증착장비의 샤워헤드구조를 보인 단면도.5 is a cross-sectional view showing a showerhead structure of the inventive semiconductor oxide film deposition apparatus.
도 6은 본 고안 샤워헤드를 이용하여 증착공정이 진행되는 상태를 개략적으로 보인 단면도.Figure 6 is a schematic cross-sectional view showing a state in which the deposition process proceeds using the subject innovation showerhead.
* * 도면의 주요부분에 대한 부호의 설명 * ** * Explanation of symbols for main parts of drawing * *
11 : 몸체 12 : 가스분사공11 body 12 gas injection hole
상기와 같은 본 고안의 목적을 달성하기 위하여 일정두께를 갖는 원형의 몸체와, 그 몸체에 형성되어 있는 다수개의 가스분사공으로 구성되어 있는 반도체 산화막 증착장비의 샤워헤드에 있어서, 상기 가스분사공들이 중앙을 향하도록 하향 경사지게 형성되는 것을 특징으로 하는 반도체 산화막 증착장비의 샤워헤드구조가 제공된다.In the shower head of the semiconductor oxide film deposition apparatus consisting of a circular body having a predetermined thickness and a plurality of gas injection holes formed in the body in order to achieve the object of the present invention as described above, the gas injection holes in the center Provided is a showerhead structure of a semiconductor oxide film deposition apparatus, characterized in that it is formed to be inclined downward to face.
이하, 상기와 같이 구성되어 있는 본 고안 반도체 산화막 증착장비의 샤워헤드구조를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the shower head structure of the inventive semiconductor oxide film deposition apparatus is configured as described above in more detail as follows.
도 5는 본 고안 반도체 산화막 증착장비의 샤워헤드구조를 보인 단면도로서, 도시된 바와 같이, 본 고안 반도체 산화막 증착장비의 샤워헤드구조는 일정두께를 갖는 원형의 몸체(11)와, 그 몸체(11)에 형성되어 있는 다수개의 가스분사공(12)의 구성되어 있는 구성은 종래와 유사하다.5 is a cross-sectional view showing a showerhead structure of the semiconductor oxide film deposition apparatus of the present invention, as shown, the showerhead structure of the semiconductor oxide film deposition apparatus of the present invention has a circular body 11 having a predetermined thickness, and the body 11 The configuration of the plurality of gas injection holes 12 formed in the above) is similar to that of the prior art.
여기서, 본 고안은 상기 가스분사공(12)은 몸체(11)의 중앙부를 향하도록 하향경사지도록 형성하되, 그 경사도가 가장자리 보다 중앙부로 갈수록 심하도록 형성되어 있다.Here, the present invention is the gas injection hole 12 is formed to be inclined downward toward the center portion of the body 11, the inclination is formed to be more severe toward the center than the edge.
즉, 몸체(11)의 가장자리에 형성되어 있는 가스분사공(12)들은 종래와 마찬가지로 거의 수직방향으로 형성되어 있으나, 몸체(11)의 중앙부로 갈수록 점점 경사가 심하게 형성되어 있다.That is, the gas injection holes 12 formed at the edge of the body 11 are formed in a substantially vertical direction as in the prior art, but are inclined gradually toward the center of the body 11.
상기와 같이 구성되어 있는 본 고안 반도체 산화막 증착장비의 샤워헤드구조의 작용을 설명하면 다음과 같다.Referring to the operation of the shower head structure of the inventive semiconductor oxide film deposition apparatus is configured as described above are as follows.
공정을 진행하기 위한 공정가스가 가스피드스루(미도시)를 통하여 샤워헤드(13)로 공급되면 샤워헤드(13)의 몸체(11)에 형성되어 있는 다수개의 가스분사공(12)을 통하여 웨이퍼(W)의 상부에 분사되는 것은 종래와 동일하다.When the process gas for the process is supplied to the shower head 13 through a gas feedthrough (not shown), the wafer passes through a plurality of gas injection holes 12 formed in the body 11 of the shower head 13. Spraying on the upper portion of (W) is the same as in the prior art.
다만, 본 고안에서는 상기 몸체(11)에 형성되어 있는 가스분사공(12)이 중앙부로 갈수록 하향경사지도록 형성되어 있기 때문에, 공정가스가 웨이퍼(W)의 가장자리 보다 중앙부의 상부에 많이 공급되고, 플라즈마에 의하여 산화막의 증착시 웨이퍼(W)의 중앙부로 공급된 가스중 일부가 배출되며 웨이퍼(W)의 가장자리에 증착되기 때문에 도 6과 같이 전체적인 증착막(14)의 두께가 종래보다 균일하게 형성된다.However, in the present invention, since the gas injection hole 12 formed in the body 11 is formed to be inclined downward toward the center part, the process gas is supplied to the upper part of the center part more than the edge of the wafer W, When the oxide film is deposited by the plasma, part of the gas supplied to the center portion of the wafer W is discharged and deposited at the edge of the wafer W, so that the overall thickness of the deposited film 14 is uniformly formed as shown in FIG. 6. .
이상에서 상세히 설명한 바와 같이 본 고안 반도체 산화막 증착장비의 샤워헤드구조는 몸체에 형성되어 있는 다수개의 가스분사공을 중앙부를 향하도록 하향경사지게 형성하여, 웨이퍼의 중앙부에 많이 공급된 가스중 일부가 배출되며 웨이퍼의 가장자리에 증착되도록 함으로서, 전체적인 증착막의 두께가 균일하게 형성되어 두께 균일도를 향상시키는 효과가 있다.As described in detail above, the shower head structure of the inventive semiconductor oxide film deposition apparatus is formed to be inclined downward toward the center portion of the plurality of gas injection holes formed in the body, and some of the gas supplied to the center portion of the wafer is discharged. By being deposited at the edge of the wafer, the overall thickness of the deposited film is formed uniformly, thereby improving the thickness uniformity.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR2019970022532U KR200169727Y1 (en) | 1997-08-20 | 1997-08-20 | Shower head structure of semiconductor oxide film deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019970022532U KR200169727Y1 (en) | 1997-08-20 | 1997-08-20 | Shower head structure of semiconductor oxide film deposition equipment |
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| KR19990009332U KR19990009332U (en) | 1999-03-15 |
| KR200169727Y1 true KR200169727Y1 (en) | 2000-02-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101590897B1 (en) * | 2014-07-31 | 2016-02-03 | 세메스 주식회사 | Showerhead and substrate treating apparatus for including this |
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| KR102762684B1 (en) * | 2022-02-15 | 2025-02-07 | 주식회사 에스엠티 | Fluid injection control device of a fluid injector and chemical vapor deposition device including the same |
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1997
- 1997-08-20 KR KR2019970022532U patent/KR200169727Y1/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101590897B1 (en) * | 2014-07-31 | 2016-02-03 | 세메스 주식회사 | Showerhead and substrate treating apparatus for including this |
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