KR20020004129A - 시알론 입계상을 갖는 강인화 탄화규소 제조법 - Google Patents
시알론 입계상을 갖는 강인화 탄화규소 제조법 Download PDFInfo
- Publication number
- KR20020004129A KR20020004129A KR1020000037641A KR20000037641A KR20020004129A KR 20020004129 A KR20020004129 A KR 20020004129A KR 1020000037641 A KR1020000037641 A KR 1020000037641A KR 20000037641 A KR20000037641 A KR 20000037641A KR 20020004129 A KR20020004129 A KR 20020004129A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon carbide
- sialon
- grain boundary
- phase
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 3
- 238000005245 sintering Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 6
- 238000007731 hot pressing Methods 0.000 abstract 2
- 239000002994 raw material Substances 0.000 abstract 1
- 239000007858 starting material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
- C04B2235/3869—Aluminium oxynitrides, e.g. AlON, sialon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
Abstract
본 기술은 벌크상 탄화규소 제조시 소결조제로 시알론 조성(질화규소, 질화알루미늄, 이트리아)을 출발 분말상에 혼합하여 가압소결시킨 다음 열처리하여 내크립성이 우수하고 시알론 상을 입계에 형성시킴으로서 종래의 탄화규소에 비하여 고온강도가 우수한 소결체를 제공하기 위한 기술임.
Description
▲ 발명이 속하는 기술분야
- 본 기술은 벌크상 탄화규소 제조시 소결조제로 시알론 조성(질화규소, 질화알루미늄, 이트리아)을 출발 분말상에 혼합하여 가압소결시킨 다음 열처리하여입계상을 시알론으로 전이시킨 강인성 탄화규소 소결체임.
▲ 그 분야의 종래기술
① 종래의 일예
탄화규소에 보론, 알루미늄, 탄소등을 첨가시켜 소결한 연구사례가 보고됨.
② 종래의 다른예
탄화규소에 이트리아, 알루미나 등 산화물을 첨가시켜 소결밀도와 인성을 향상시키는 연구사례가 보고됨.
▲ 기존에 나와있는 기술의 문제점 설명
① 탄화규소에 보론, 탄소, 알루미늄등을 첨가하여 소결한 탄화규소는 소결온도가 높아 입자 크기가 크고 이로 인하여 인성이 떨어지는 문제가 있슴.
② 탄화규소에 이트리아, 알루미나 등 산화물을 첨가시켜 소결한 탄화규소는 입계에 산화물 유리상을 형성하기 때문에 인성 및 강도가 떨어짐.
① 본 기술은 탄화규소의 입계에 강도가 큰 시알론 상을 형성시켜 인성이 증가된 탄화규소를 제조하기 위한 기술임.
② 종래의 탄화규소에 비하여 입계에 내크립성이 우수한 시알론 상을 입계에 형성시켜 고온강도가 우수한 소결체를 제공하기 위한 기술임.
도1은 6H, 4H 상이 각각 주상인 시알론 입계 탄화규소 소결체의 x-ray 회절도로 (a)는 α상 탄화규소를 출발원료로 한 경우이고 (b)는 β상 탄화규소를 출발원료로 한 경우이다.
도2는 시알론 입계상을 보여주는 전자현미경 사진 및 EDS 분석도
도3은 α-SiC 및 β-SiC 를 출발원료로 한 시알론 입계 강화 탄화규소 소결체의 전자현미경 사진
도4는 시알론 입계 강화 탄화규소 소결체의 미세구조 인자와 파괴인성
도5는 강인성 탄화규소에서 균열 진전시 균열편향, 균열굴절, grain bridging이 일어나는 탄화규소 소결체 사진
① 조성
- Sialon 조성 ; 9 wt% Y2O3+ 16 wt% AIN + 75 wt% Si3N4
- 탄화규소 조성 : 0.45 ㎛의 α상 + 2 mol% Sialon 조성
0.45 ㎛의 β상 + 2 mol% Sialon 조성
② 제조방법
- α상과 β상 SiC 분말에 시알론 조성 분말 2mol%를 첨가한 다음, 5시간 혼합한 후 과립분말을 제조함.
- Hot Press를 이용하여 50MPa의 압력으로 1850℃의 온도에서 아르곤 분위기로 30분 동안 소결.
- 1950℃로 승온하여 5시간 동안 열처리하여 최종 소결체로 제조함.
③ 시험결과
- 99%이상인 소결밀도와 6H, 4H 상이 각각 주상인 시알론 입계 탄화규소 소결체가 제조됨 (도1 및 도2)
- α- SiC를 출발원료로 한 경우 등면체상 입자를 갖는 치밀한 소결체가 제조됨.
- β- SiC를 출발원료로 한 경우 막대상과 판상입자를 갖는 치밀한 소결체가 제조됨(도3)
- 장단축비가 3.1, 4.2 파괴인성이 5,0, 6.0 인 강인성 탄화규소 소결체가 제조됨(도4)
- 균열 진전시 균열편향이나 균열굴절, grain bridging이 일어나는 강인성 탄화규소 소결체가 제조됨(도5).
- 탄화규소의 파괴인성과 강도를 향상시킴.
- 탄화규소의 내크립성 및 고온강도를 향상시킴.
- 탄화규소 분쇄용 볼, 노즐, 베어링에 적용 가능함.
- 열교환기, 반응관, 열처리용 치구 등에 적용 가능함.
Claims (1)
- 시알론 조성을 입계로 하여 탄화규소 소결체를 제조함에 있어서소결조제로 시알론 조성(질화규소, 질화알루미늄, 이트리아)을 첨가하는 방법소결 및 열처리시 계면에 시알론상을 형성시키면서 고밀도 소결체를 얻는 방법시알론 입계상 및 고밀도 형성에 의한 고인성 탄화규소를 제조하는 방법소결조건 및 열처리 조건 제어에 의하여 탄화규소의 미세구조를 제어하는 방법
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000037641A KR20020004129A (ko) | 2000-07-03 | 2000-07-03 | 시알론 입계상을 갖는 강인화 탄화규소 제조법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000037641A KR20020004129A (ko) | 2000-07-03 | 2000-07-03 | 시알론 입계상을 갖는 강인화 탄화규소 제조법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020004129A true KR20020004129A (ko) | 2002-01-16 |
Family
ID=19675837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000037641A Ceased KR20020004129A (ko) | 2000-07-03 | 2000-07-03 | 시알론 입계상을 갖는 강인화 탄화규소 제조법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20020004129A (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2359944C1 (ru) * | 2007-11-01 | 2009-06-27 | Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный технологический институт (технический университет)" | Сиалонсодержащий материал и композиция для его получения |
| CN115894058A (zh) * | 2022-11-25 | 2023-04-04 | 南京航空航天大学 | 一种SiC/SiC复合材料闪烧快速致密化的方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193472A (ja) * | 1987-09-30 | 1989-04-12 | Toshiba Corp | 熱交換器 |
| KR900007722A (ko) * | 1988-11-24 | 1990-06-01 | 니혼 도꾸쇼 도오교오 가부시끼가이샤 | 질화규소기재 소결체(Silicon Nitride Base Sintered Body) |
| JPH06298568A (ja) * | 1993-04-09 | 1994-10-25 | Toshiba Tungaloy Co Ltd | ウイスカー強化サイアロン基焼結体およびその被覆焼結体 |
| JPH07277835A (ja) * | 1994-04-01 | 1995-10-24 | Toyota Central Res & Dev Lab Inc | 複合焼結体の製造方法 |
| JPH1029869A (ja) * | 1996-07-15 | 1998-02-03 | Honda Motor Co Ltd | 窒化珪素／炭化珪素複合焼結体及びその製造方法 |
| KR0168303B1 (ko) * | 1995-07-11 | 1999-01-15 | 니시므로 타이조우 | 질화 알루미늄 소결체 및 그의 제조방법 |
| JPH1179849A (ja) * | 1997-09-09 | 1999-03-23 | Sumitomo Electric Ind Ltd | 窒化珪素系焼結体およびその製造方法 |
-
2000
- 2000-07-03 KR KR1020000037641A patent/KR20020004129A/ko not_active Ceased
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193472A (ja) * | 1987-09-30 | 1989-04-12 | Toshiba Corp | 熱交換器 |
| KR900007722A (ko) * | 1988-11-24 | 1990-06-01 | 니혼 도꾸쇼 도오교오 가부시끼가이샤 | 질화규소기재 소결체(Silicon Nitride Base Sintered Body) |
| JPH06298568A (ja) * | 1993-04-09 | 1994-10-25 | Toshiba Tungaloy Co Ltd | ウイスカー強化サイアロン基焼結体およびその被覆焼結体 |
| JPH07277835A (ja) * | 1994-04-01 | 1995-10-24 | Toyota Central Res & Dev Lab Inc | 複合焼結体の製造方法 |
| KR0168303B1 (ko) * | 1995-07-11 | 1999-01-15 | 니시므로 타이조우 | 질화 알루미늄 소결체 및 그의 제조방법 |
| JPH1029869A (ja) * | 1996-07-15 | 1998-02-03 | Honda Motor Co Ltd | 窒化珪素／炭化珪素複合焼結体及びその製造方法 |
| JPH1179849A (ja) * | 1997-09-09 | 1999-03-23 | Sumitomo Electric Ind Ltd | 窒化珪素系焼結体およびその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2359944C1 (ru) * | 2007-11-01 | 2009-06-27 | Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный технологический институт (технический университет)" | Сиалонсодержащий материал и композиция для его получения |
| CN115894058A (zh) * | 2022-11-25 | 2023-04-04 | 南京航空航天大学 | 一种SiC/SiC复合材料闪烧快速致密化的方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lee et al. | Effects of α‐SiC versus β‐SiC starting powders on microstructure and fracture toughness of SiC sintered with Al2O3‐Y2O3 additives | |
| Hirao et al. | Processing strategy for producing highly anisotropic silicon nitride | |
| Kim et al. | Densification and mechanical properties of B4C with Al2O3 as a sintering aid | |
| US5656218A (en) | Method for making high performance self-reinforced silicon carbide using a pressureless sintering process | |
| JPH0753604B2 (ja) | 炭化ケイ素質複合セラミツクス | |
| CN100486931C (zh) | 一种高强度、高韧性的氮化硅陶瓷液相烧结法 | |
| CN110590377A (zh) | 一种高β相致密氮化硅陶瓷及低温制备方法 | |
| Cho et al. | Strength and fracture toughness of in situ-toughened silicon carbide | |
| Feng et al. | Effect of TiB2 content on microstructure and mechanical properties of in-situ fabricated TiB2/B4C composites | |
| Baharvandi et al. | Processing and mechanical properties of boron carbide–titanium diboride ceramic matrix composites | |
| Zhou et al. | Tailoring the mechanical properties of silicon carbide ceramics by modification of the intergranular phase chemistry and microstructure | |
| CN115073186A (zh) | 一种氮化硅陶瓷烧结体及其制备方法 | |
| Yokota et al. | Microstructure tailoring for high thermal conductivity of β‐Si3N4 ceramics | |
| Cho et al. | In situ enhancement of toughness of SiC—TiB2 composites | |
| Tanaka et al. | Nonequiaxial grain growth and polytype transformation of sintered α‐silicon carbide and β‐silicon carbide | |
| JPH05246760A (ja) | ジルコニア系複合セラミック焼結体及びその製法 | |
| Kim et al. | Effect of annealing on mechanical properties of self-reinforced alpha-silicon carbide | |
| JP2507480B2 (ja) | ＳｉＣ−Ａｌ▲下２▼Ｏ▲下３▼複合焼結体及びその製造法 | |
| US4806510A (en) | Silicon nitride sintered body and method for producing same | |
| KR20020004129A (ko) | 시알론 입계상을 갖는 강인화 탄화규소 제조법 | |
| CA2077887A1 (en) | Silicon carbide ceramics containing a dispersed high metal content silicide phase | |
| Tanaka et al. | Sintering and strength of silicon nitride-silicon carbide composites | |
| Baharvandi et al. | Investigation on addition of talc on sintering behavior and mechanical properties of B4C | |
| JPH09268069A (ja) | 高熱伝導性材料およびその製造方法 | |
| Suyama et al. | Development of high strength reaction-sintered silicon carbide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20000703 |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20020829 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20030407 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20020829 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |