KR20090057735A - Opc테스트 패턴용 레티클 및 그 제조 방법 - Google Patents
Opc테스트 패턴용 레티클 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20090057735A KR20090057735A KR1020070124441A KR20070124441A KR20090057735A KR 20090057735 A KR20090057735 A KR 20090057735A KR 1020070124441 A KR1020070124441 A KR 1020070124441A KR 20070124441 A KR20070124441 A KR 20070124441A KR 20090057735 A KR20090057735 A KR 20090057735A
- Authority
- KR
- South Korea
- Prior art keywords
- test pattern
- pattern
- opc
- reticle
- dummy pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (6)
- OPC 테스트 패턴용 레티클에 있어서,각 패턴사이에 소정 형상의 빛 투과량 조절용 더미 패턴을 형성하되, 상기 패턴과 더미 패턴사이에 간격을 형성한OPC 테스트 패턴용 레티클.
- 제 1 항에 있어서,상기 레티클의 빛을 투과하는 밀도는 OPC 적용 칩과 동일한 것을 특징으로 하는OPC 테스트 패턴용 레티클.
- 제 1 항에 있어서,상기 간격은 0.8~1.5㎛인 것을 특징으로 하는OPC 테스트 패턴용 레티클.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 더미 패턴은 정사각형 형상인 것을 특징으로 하는OPC 테스트 패턴용 레티클.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 더미 패턴은 일정 간격을 가지는 가로 또는 세로 방향으로 조절된 라인 형상인 것을 특징으로 하는OPC 테스트 패턴용 레티클.
- OPC 테스트 패턴용 레티클 제조방법에 있어서,서로 일정하게 이격된 상기 테스트 패턴을 형성하는 단계와,상기 테스트 패턴사이에 소정 형상의 빛 투과량 조절용 더미 패턴을 형성하되, 상기 테스트 패턴과 더미 패턴사이에 간격을 형성하는 단계를 포함하는OPC 테스트 패턴용 레티클 제조 방법.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070124441A KR20090057735A (ko) | 2007-12-03 | 2007-12-03 | Opc테스트 패턴용 레티클 및 그 제조 방법 |
| US12/254,296 US20090142675A1 (en) | 2007-12-03 | 2008-10-20 | Reticle for optical proximity correction test pattern and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070124441A KR20090057735A (ko) | 2007-12-03 | 2007-12-03 | Opc테스트 패턴용 레티클 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090057735A true KR20090057735A (ko) | 2009-06-08 |
Family
ID=40676070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070124441A Ceased KR20090057735A (ko) | 2007-12-03 | 2007-12-03 | Opc테스트 패턴용 레티클 및 그 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090142675A1 (ko) |
| KR (1) | KR20090057735A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9989842B2 (en) | 2015-07-14 | 2018-06-05 | Samsung Electronics Co., Ltd. | Method of generating test patterns using random function |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8234601B2 (en) | 2010-05-14 | 2012-07-31 | International Business Machines Corporation | Test pattern for contour calibration in OPC model build |
| KR102695015B1 (ko) | 2018-09-17 | 2024-08-13 | 삼성전자주식회사 | 네가티브톤 현상용 포토마스크 |
| CN113396363B (zh) * | 2019-02-07 | 2024-12-20 | Asml荷兰有限公司 | 图案形成装置及其使用方法 |
| CN114488684A (zh) * | 2020-11-12 | 2022-05-13 | 联华电子股份有限公司 | 光掩模及半导体制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1385052B1 (en) * | 2002-07-26 | 2006-05-31 | ASML MaskTools B.V. | Orientation dependent shielding for use with dipole illumination techniques |
| WO2004104699A1 (ja) * | 2003-05-26 | 2004-12-02 | Fujitsu Limited | パターン寸法補正 |
| US7422829B1 (en) * | 2004-06-02 | 2008-09-09 | Advanced Micro Devices, Inc. | Optical proximity correction (OPC) technique to compensate for flare |
-
2007
- 2007-12-03 KR KR1020070124441A patent/KR20090057735A/ko not_active Ceased
-
2008
- 2008-10-20 US US12/254,296 patent/US20090142675A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9989842B2 (en) | 2015-07-14 | 2018-06-05 | Samsung Electronics Co., Ltd. | Method of generating test patterns using random function |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090142675A1 (en) | 2009-06-04 |
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St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
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| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
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| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |