KR20110076152A - 구리 피막의 제조방법 - Google Patents
구리 피막의 제조방법 Download PDFInfo
- Publication number
- KR20110076152A KR20110076152A KR1020090132784A KR20090132784A KR20110076152A KR 20110076152 A KR20110076152 A KR 20110076152A KR 1020090132784 A KR1020090132784 A KR 1020090132784A KR 20090132784 A KR20090132784 A KR 20090132784A KR 20110076152 A KR20110076152 A KR 20110076152A
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- South Korea
- Prior art keywords
- substrate
- copper
- bias voltage
- evaporation rate
- vacuum
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
- 진공 챔버의 수냉 기판 홀더에 기판을 장입하는 기판 장입 단계;상기 진공 챔버 내부를 제1 진공 상태로 형성하기 위한 제1 배기 단계;상기 진공 챔버 내부로 불활성 기체를 유입시키고 상기 기판에 전압을 인가하여 활성화시키는 기판 활성화 단계;상기 진공 챔버 내부를 제2 진공 상태로 형성하기 위한 제2 배기 단계; 및상기 수냉 기판 홀더에 물을 흐르게 함과 동시에, 상기 기판에 인접하여 위치한 구리를 증발시키고 상기 기판에 바이어스 전압을 인가하여 상기 기판에 구리를 코팅하는 코팅 단계;를 포함하는 구리 피막의 제조방법.
- 제1항에서,상기 코팅 단계는,제1 구리 증발율에서 제1 바이어스 전압을 인가하여 이루어지는 제1 코팅 단계;상기 제1 구리 증발율보다 높은 제2 구리 증발율에서, 상기 제1 바이어스 전압보다 낮은 제2 바이어스 전압을 인가하여 이루어지는 제2 코팅 단계; 및상기 제2 구리 증발율보다 높은 제3 구리 증발율에서, 상기 제2 바이어스 전압보다 낮은 제3 바이어스 전압을 인가하여 이루어지는 제3 코팅 단계를 포함하는,구리 피막의 제조방법.
- 제2항에서,상기 제1 구리 증발율은 상기 제3 구리 증발율의 10% 이하인, 구리 피막의 제조방법.
- 제2항에서,상기 제2 구리 증발율은 상기 제3 구리 증발율의 10% 내지 40%의 범위에 속하는, 구리 피막의 제조방법.
- 제2항에서,상기 제1 바이어스 전압은 상기 제3 바이어스 전압의 6배 이상인, 구리 피막의 제조방법.
- 제2항에서,상기 제2 바이어스 전압은 상기 제3 바이어스 전압의 2 내지 4배의 범위에 속하는, 구리 피막의 제조방법.
- 제1항에서,상기 기판 장입 단계 전에 상기 기판을 초음파 세척하는 초음파 세척 단계를 더 포함하는 구리 피막의 제조방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090132784A KR101591025B1 (ko) | 2009-12-29 | 2009-12-29 | 구리 피막의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090132784A KR101591025B1 (ko) | 2009-12-29 | 2009-12-29 | 구리 피막의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110076152A true KR20110076152A (ko) | 2011-07-06 |
| KR101591025B1 KR101591025B1 (ko) | 2016-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090132784A Expired - Fee Related KR101591025B1 (ko) | 2009-12-29 | 2009-12-29 | 구리 피막의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101591025B1 (ko) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020053997A (ko) * | 2000-12-26 | 2002-07-06 | 신현준 | 스퍼터링에 의한 탄탈륨 피막의 형성방법 |
| KR20020061768A (ko) * | 2001-01-17 | 2002-07-25 | 한국과학기술연구원 | 다이아몬드막의 제조방법 및 장치 |
| KR200349298Y1 (ko) * | 2004-02-13 | 2004-05-04 | 주식회사 이산바이오텍 | 전자파 차폐용 다층피막형성장치 |
| KR100553639B1 (ko) * | 2003-12-22 | 2006-02-22 | 재단법인 포항산업과학연구원 | 진공증착법을 이용한 플라스틱 소재의 알루미늄 피막제조방법 |
-
2009
- 2009-12-29 KR KR1020090132784A patent/KR101591025B1/ko not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020053997A (ko) * | 2000-12-26 | 2002-07-06 | 신현준 | 스퍼터링에 의한 탄탈륨 피막의 형성방법 |
| KR20020061768A (ko) * | 2001-01-17 | 2002-07-25 | 한국과학기술연구원 | 다이아몬드막의 제조방법 및 장치 |
| KR100553639B1 (ko) * | 2003-12-22 | 2006-02-22 | 재단법인 포항산업과학연구원 | 진공증착법을 이용한 플라스틱 소재의 알루미늄 피막제조방법 |
| KR200349298Y1 (ko) * | 2004-02-13 | 2004-05-04 | 주식회사 이산바이오텍 | 전자파 차폐용 다층피막형성장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101591025B1 (ko) | 2016-02-03 |
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