KR20140114821A - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
KR20140114821A
KR20140114821A KR1020147018433A KR20147018433A KR20140114821A KR 20140114821 A KR20140114821 A KR 20140114821A KR 1020147018433 A KR1020147018433 A KR 1020147018433A KR 20147018433 A KR20147018433 A KR 20147018433A KR 20140114821 A KR20140114821 A KR 20140114821A
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KR
South Korea
Prior art keywords
electromagnets
electromagnet
group
magnetic field
processing space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147018433A
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English (en)
Korean (ko)
Inventor
아키히로 요코타
에츠지 이토
신지 히모리
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20140114821A publication Critical patent/KR20140114821A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020147018433A 2012-01-18 2013-01-17 기판 처리 장치 Ceased KR20140114821A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2012-008019 2012-01-18
JP2012008019A JP6018757B2 (ja) 2012-01-18 2012-01-18 基板処理装置
US201261592213P 2012-01-30 2012-01-30
US61/592,213 2012-01-30
PCT/JP2013/051362 WO2013108930A1 (ja) 2012-01-18 2013-01-17 基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197025510A Division KR102148005B1 (ko) 2012-01-18 2013-01-17 기판 처리 방법

Publications (1)

Publication Number Publication Date
KR20140114821A true KR20140114821A (ko) 2014-09-29

Family

ID=48799346

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147018433A Ceased KR20140114821A (ko) 2012-01-18 2013-01-17 기판 처리 장치
KR1020197025510A Active KR102148005B1 (ko) 2012-01-18 2013-01-17 기판 처리 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020197025510A Active KR102148005B1 (ko) 2012-01-18 2013-01-17 기판 처리 방법

Country Status (5)

Country Link
US (2) US20140346040A1 (2)
JP (1) JP6018757B2 (2)
KR (2) KR20140114821A (2)
TW (1) TWI559818B (2)
WO (1) WO2013108930A1 (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170042489A (ko) * 2015-10-09 2017-04-19 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법
KR20230117237A (ko) * 2020-12-18 2023-08-07 어플라이드 머티어리얼스, 인코포레이티드 인가된 자기장을 이용한 화학적 기계적 연마

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JP6009171B2 (ja) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
JP6317139B2 (ja) 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置
JP6244518B2 (ja) 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10091594B2 (en) 2014-07-29 2018-10-02 Cochlear Limited Bone conduction magnetic retention system
US11295935B2 (en) 2015-05-11 2022-04-05 Ebara Corporation Electromagnet device, electromagnet controller, electromagnet control method, and electromagnet system
US10130807B2 (en) 2015-06-12 2018-11-20 Cochlear Limited Magnet management MRI compatibility
US20160381473A1 (en) 2015-06-26 2016-12-29 Johan Gustafsson Magnetic retention device
US10917730B2 (en) * 2015-09-14 2021-02-09 Cochlear Limited Retention magnet system for medical device
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6964039B2 (ja) 2018-04-20 2021-11-10 株式会社荏原製作所 電磁石制御装置および電磁石システム
JP7222848B2 (ja) 2019-08-26 2023-02-15 株式会社荏原製作所 電磁石制御装置および電磁石システム
US12420101B2 (en) 2019-09-27 2025-09-23 Cochlear Limited Multipole magnet for medical implant system
CN113699495B (zh) * 2021-06-21 2023-12-22 北京北方华创微电子装备有限公司 磁控溅射组件、磁控溅射设备及磁控溅射方法
USD1104086S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1103948S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
JP7685973B2 (ja) 2022-05-25 2025-05-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
USD1085029S1 (en) * 2022-07-19 2025-07-22 Applied Materials, Inc. Gas distribution plate
CN117894662B (zh) * 2024-01-15 2024-10-25 北京北方华创微电子装备有限公司 一种工艺腔室及半导体工艺设备
CN119764154B (zh) * 2025-03-07 2025-10-28 上海邦芯半导体科技有限公司 一种等离子体刻蚀设备以及刻蚀方法

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JP3238200B2 (ja) * 1992-07-17 2001-12-10 株式会社東芝 基体処理装置及び半導体素子製造方法
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JP4355157B2 (ja) * 2003-03-31 2009-10-28 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置及び磁場発生装置
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JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170042489A (ko) * 2015-10-09 2017-04-19 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법
KR20240014096A (ko) * 2015-10-09 2024-01-31 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법
KR20240014562A (ko) * 2015-10-09 2024-02-01 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법
KR20230117237A (ko) * 2020-12-18 2023-08-07 어플라이드 머티어리얼스, 인코포레이티드 인가된 자기장을 이용한 화학적 기계적 연마

Also Published As

Publication number Publication date
KR20190104436A (ko) 2019-09-09
JP2013149722A (ja) 2013-08-01
TW201352075A (zh) 2013-12-16
US20140346040A1 (en) 2014-11-27
WO2013108930A1 (ja) 2013-07-25
KR102148005B1 (ko) 2020-08-25
JP6018757B2 (ja) 2016-11-02
TWI559818B (zh) 2016-11-21
US20170162367A1 (en) 2017-06-08
US10651012B2 (en) 2020-05-12

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