KR20140148383A - 포토레지스트 조성물, 레지스트 패턴 형성 방법 및 중합체 - Google Patents

포토레지스트 조성물, 레지스트 패턴 형성 방법 및 중합체 Download PDF

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Publication number
KR20140148383A
KR20140148383A KR1020147026028A KR20147026028A KR20140148383A KR 20140148383 A KR20140148383 A KR 20140148383A KR 1020147026028 A KR1020147026028 A KR 1020147026028A KR 20147026028 A KR20147026028 A KR 20147026028A KR 20140148383 A KR20140148383 A KR 20140148383A
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KR
South Korea
Prior art keywords
group
carbon atoms
polymer
hydrocarbon group
structural unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020147026028A
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English (en)
Korean (ko)
Inventor
히로무 미야타
Original Assignee
제이에스알 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시끼가이샤 filed Critical 제이에스알 가부시끼가이샤
Publication of KR20140148383A publication Critical patent/KR20140148383A/ko
Abandoned legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
KR1020147026028A 2012-03-23 2013-03-19 포토레지스트 조성물, 레지스트 패턴 형성 방법 및 중합체 Abandoned KR20140148383A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-068406 2012-03-23
JP2012068406 2012-03-23
PCT/JP2013/057913 WO2013141265A1 (fr) 2012-03-23 2013-03-19 Composition de photorésine, procédé de formation d'un motif de photorésine, et polymère

Publications (1)

Publication Number Publication Date
KR20140148383A true KR20140148383A (ko) 2014-12-31

Family

ID=49222722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147026028A Abandoned KR20140148383A (ko) 2012-03-23 2013-03-19 포토레지스트 조성물, 레지스트 패턴 형성 방법 및 중합체

Country Status (3)

Country Link
JP (1) JP6064990B2 (fr)
KR (1) KR20140148383A (fr)
WO (1) WO2013141265A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5933339B2 (ja) * 2012-05-23 2016-06-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6286118B2 (ja) * 2012-09-27 2018-02-28 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP6149656B2 (ja) * 2012-09-28 2017-06-21 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、重合体及び化合物
JP6175232B2 (ja) * 2012-12-05 2017-08-02 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び高分子化合物
JP5828325B2 (ja) * 2013-01-28 2015-12-02 信越化学工業株式会社 パターン形成方法
JP6748495B2 (ja) * 2015-07-14 2020-09-02 住友化学株式会社 レジスト組成物
JP6905330B2 (ja) * 2015-12-09 2021-07-21 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6815850B2 (ja) * 2015-12-09 2021-01-20 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
WO2019171958A1 (fr) * 2018-03-07 2019-09-12 丸善石油化学株式会社 Composé (méth)acrylate bifonctionnel et polymère
CN112041353B (zh) * 2018-03-07 2022-01-14 丸善石油化学株式会社 新型二官能(甲基)丙烯酸酯化合物和聚合物
JP7264764B2 (ja) * 2018-08-22 2023-04-25 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796560B2 (ja) * 1999-01-27 2006-07-12 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びパターン形成方法
JP2003137939A (ja) * 2001-11-05 2003-05-14 Central Glass Co Ltd 含フッ素高分子化合物および感光性コーティング材料
JP4079799B2 (ja) * 2003-02-24 2008-04-23 セントラル硝子株式会社 含フッ素化合物の製法
TWI347495B (en) * 2006-01-08 2011-08-21 Rohm & Haas Elect Mat Coating compositions for photoresists
US8168371B2 (en) * 2007-01-22 2012-05-01 Nissan Chemical Industries, Ltd. Positive photosensitive resin composition
JP5223775B2 (ja) * 2009-05-25 2013-06-26 セントラル硝子株式会社 液浸レジスト用撥水性添加剤
JP2012063728A (ja) * 2010-09-17 2012-03-29 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜及びパターン形成方法

Also Published As

Publication number Publication date
JP6064990B2 (ja) 2017-01-25
WO2013141265A1 (fr) 2013-09-26
JPWO2013141265A1 (ja) 2015-08-03

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