KR20200045480A - 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법 - Google Patents
변조구조를 갖는 고절연 나노 보호코팅층의 제조방법 Download PDFInfo
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
| 측정 소지 | 실험 조건 | 순환횟수 | 실험시간 | 결과 검측 |
| 알루미늄 재료 | -40℃~+75℃ | 25 | 2h | 외관에 영향이 없고 성능이 양호함 |
| PCB기판 | -40℃~+75℃ | 25 | 2h | 외관에 영향이 없고 성능이 양호함 |
| 실험조건 | 온도 | 55℃ | |||||
| 습도 | 75% | 80% | 85% | 90% | 95% | ||
| 알루미늄 재료 | 시간 | 12h | Pass | Pass | Pass | Pass | Pass |
| 시간 | 24h | Pass | Pass | Pass | Pass | Pass | |
| 시간 | 36h | Pass | Pass | Pass | Pass | Pass | |
| 시간 | 48h | Pass | Pass | Pass | Pass | Pass | |
| 측정 소지 | 실험 조건 | 순환횟수 | 실험시간 | 결과 검측 |
| 알루미늄 재료 | -40℃~+75℃ | 25 | 2h | 외관에 영향이 없고 성능이 양호함 |
| 실험조건 | 온도 | 55℃ | |||||
| 습도 | 75% | 80% | 85% | 90% | 95% | ||
| 알루미늄 재료 | 시간 | 12h | Pass | Pass | Pass | Pass | Pass |
| 시간 | 24h | Pass | Pass | Pass | Pass | Pass | |
| 시간 | 36h | Pass | Pass | Pass | Pass | Pass | |
| 시간 | 48h | Pass | Pass | Pass | Pass | Pass | |
| 폴리테트라플루오로에틸렌판-성능측정 | |
| 물 접촉각 | 121° |
| 오일 접촉각 | 95° |
| 곰팡이 방지 등급 | 2급 |
| 표면 곰팡이 반점 정도 | 6% |
| 내수중통전성 | |||
| |
일정한 전압에서 전류가 1mA되기까지 사용된 시간 | ||
| 3.8V | 5V | 12.5V | |
| 실시예3 | >96h | >96h | >96h |
| IPX7방수등급 측정 | |
| 실시예3 | 전기부품 정상 작동 |
| 폴리테트라플루오로에틸렌판-성능측정 | |
| 물 접촉각 | 126° |
| 오일 접촉각 | 98° |
| 곰팡이 방지 등급 | 2급 |
| 표면 곰팡이 반점 정도 | 7% |
| 내수중통전성 | |||
| |
일정한 전압에서 전류가 1mA되기까지 사용된 시간 | ||
| 3.8V | 5V | 12.5V | |
| 실시예4 | >96h | >96h | >96h |
| IPX7방수등급 측정 | |
| 실시예4 | 전기부품 정상 작동 |
| 성능 | ||||
| 물 접촉각 | 오일접촉각 | 접착성 | 전매상수 | |
| 실시예5 | 125° | 84° | 저밀착, 물방울이 쉽게 떨어짐 | 2.57 |
| 소지 재료 | 화학시제 | 시간 | |||
| 48h | 96h | 144h | 192h | ||
| 알루미늄 판재 | 아세톤 | pass | pass | pass | pass |
| 시클로헥산 | pass | pass | pass | pass | |
| 석유 에테르 | pass | pass | pass | pass | |
| 자일렌 | pass | pass | pass | pass | |
| n-프로판올 | pass | pass | pass | pass | |
| 소지 | 산염기시제 | 시간 | |||
| 48h | 96h | 144h | 192h | ||
| 알루미늄 판재 | 산성염 분무 | pass | pass | pass | pass |
| 중성염 분무 | pass | pass | pass | pass | |
| 염기성염 분무 | pass | pass | pass | pass | |
| 5%초산용액 | pass | pass | pass | pass | |
| 5%NaOH용액 | pass | pass | pass | pass | |
| 성능 | ||||
| 물 접촉각 | 오일접촉각 | 접착성 | 전매상수 | |
| 실시예6 | 120° | 80° | 저밀착, 물방울이 쉽게 떨어짐 | 2.46 |
| 내수중통전성 | |||
| |
일정한 전압에서 전류가 1mA되기까지 사용된 시간 | ||
| 3.8V | 5V | 12.5V | |
| 실시예6 | >120h | >120h | >120h |
| 소지 재료 | 화학시제 | 시간 | |||
| 48h | 96h | 144h | 192h | ||
| 알루미늄 재료 | 아세톤 | pass | pass | pass | pass |
| 시클로헥산 | pass | pass | pass | pass | |
| 석유 에테르 | pass | pass | pass | pass | |
| 자일렌 | pass | pass | pass | pass | |
| n-프로판올 | pass | pass | pass | pass | |
| 소지 | 산염기시제 | 시간 | |||
| 48h | 96h | 144h | 192h | ||
| 알루미늄 재료 | 산성염 분무 | pass | pass | pass | pass |
| 중성염 분무 | pass | pass | pass | pass | |
| 염기성염 분무 | pass | pass | pass | pass | |
| 5%초산용액 | pass | pass | pass | pass | |
| 5%NaOH용액 | pass | pass | pass | pass | |
Claims (10)
- 소지를 나노 코팅층 제조장치의 반응챔버내에 넣고, 반응챔버를 연속적으로 진공펌핑하여 반응챔버내의 진공도를 10~200밀리토르로 진공펌핑하고, 불활성 기체 He, Ar 혹은 He와 Ar의 혼합기체를 주입하고, 운동 메커니즘을 오픈하여 소지가 운동챔버내에서 운동하도록 하는 전처리 단계(1);
단량체A 증기를 반응챔버내에 주입하여 진공도를 30~300밀리토르로 하고, 플라즈마 방전을 작동하여 화학기상증착을 진행하고, 단량체A 증기의 주입을 정지하고 단량체B 혹은 단량체C증기를 주입하여 플라즈마 방전을 계속 진행하여 화학기상증착을 진행하고, 단량체B 혹은 단량체C증기의 주입을 정지하는 과정을 적어도 1회 진행하여 소지 표면에 고절연 변조구조의 나노 코팅층을 제조하는 고절연 나노 코팅층의 제조단계(2);
플라즈마 방전을 정지하고 지속적으로 진공펌핑하여 반응챔버 진공도를 10~200밀리토르로 1~5분 동안 유지한 후, 1대기압이 되도록 공기를 주입하고, 소지의 운동을 정지한 후, 소지를 꺼내거나, 혹은 플라즈마 방전을 정지하고, 반응챔버내에 공기 혹은 불활성 기체를 주입하여 압력을 2000~5000밀리토르로 한 후, 진공펌핑하여 10-200밀리토르로 만들고, 상기 공기 주입과 진공펌핑 절차를 적어도 1회 진행하고, 1대기압이 되도록 공기를 주입하며, 소지의 운동을 정지한 후, 소지를 꺼내는 후처리 단계(3);를 포함하며,
상기 단량체A 증기의 성분은 적어도 1종의 저 쌍극자 모멘트 유기물 단량체와 적어도 1종의 다작용기 불포화 하이드로카본 및 하이드로카본 유도체의 혼합물이며, 상기 단량체A 증기에서 다작용기 불포화 하이드로카본 및 하이드로카본 유도체가 차지하는 질량분수는 15~65%이며,
상기 단량체B증기의 성분은 적어도 1종의 단일 작용기 불포화 불화탄소수지와 적어도 1종의 다작용기 불포화 하이드로카본 및 하이드로카본 유도체의 혼합물이며, 상기 단량체B증기에서 다작용기 불포화 하이드로카본 및 하이드로카본 유도체가 차지하는 질량분수는 15~65%이며,
상기 단량체C 증기의 성분은 적어도 1종의 이중결합, Si-Cl, Si-O-C, Si-N-Si, Si-O-Si 구조 혹은 환형 구조를 포함하는 유기 실리콘 단량체와 적어도 1종의 다작용기 불포화 하이드로카본 및 하이드로카본 유도체의 혼합물이며, 상기 단량체C증기에서 다작용기 불포화 하이드로카본 및 하이드로카본 유도체가 차지하는 질량분수는 15~65%이며,
상기 단량체A, 단량체B 및 단량체C의 주입량은 모두 10~1000μL/분인 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항1에 있어서,
상기 단계 (1)에서, 반응챔버내에서 소지의 운동이 발생하고, 소지의 운동형식은 소지가 반응챔버에 대하여 직선 왕복운동 또는 곡선 운동을 진행하며, 상기 곡선운동은 원운동, 타원운동, 행성운동, 구면 운동 혹은 기타 불규칙 노선 곡선 운동을 포함하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 1에 있어서,
상기 단계 (1)에서, 소지는 고체재료이고, 상기 고체재료는 전자제품, 전기부품, 전자조립 반제품, PCB판, 금속판, 폴리테트라플루오로에틸렌판 혹은 전자 부속품이고, 또한 상기 소지 표면에 유기 실리콘 나노 코팅층을 제조한 후 임의의 인터페이스는 물환경, 곰팡이 환경, 산, 염기성 용제 환경, 산, 염기성염 분무 환경, 산성 대기환경, 유기용제 담금 환경, 화장품 환경, 땀 환경, 냉열순환충격 환경 혹은 습열 교차환경에 노출하여 사용하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 1에 있어서,
상기 단계 (1)에서, 반응챔버는 회전체형 챔버이거나 혹은 입방체형 챔버이며, 반응챔버의 용적은 50~1000L이고, 반응챔버의 온도를 30~60℃로 제어하며, 상기 불활성 기체의 주입량은 5~300sccm인 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 1에 있어서,
상기 단계 (2)에서, 단량체A증기, 단량체B증기 혹은 단량체C증기를 주입하고 플라즈마 방전을 진행하여 화학기상증착을 진행하며, 증착과정에서 플라즈마 방전 과정은 저출력 연속 방전, 펄스 방전 혹은 주기적 교체 방전을 포함하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항5에 있어서,
상기 증착과정에서 플라즈마 방전 과정은 저출력 연속 방전이며,
증착 과정은 전처리 단계와 코팅 단계를 포함하는데, 전처리 단계의 플라즈마 방전 출력은 150~600W이고, 방전 지속시간은 60~450s이며, 그 다음 코팅단계로 진입하는데, 플라즈마 방전 출력을 10~150W로, 방전 지속시간은 600~3600s로 조정하는 증착 과정을 적어도 1회 포함하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 5에 있어서,
상기 증착과정에서 플라즈마 방전 과정은 펄스 방전이며,
증착 과정은 전처리 단계와 코팅 단계를 포함하는데, 전처리 단계의 플라즈마 방전 출력은 150~600W이고, 방전 지속시간은 60~450s이며, 그 다음 코팅단계로 진입하는데, 코팅 단계는 펄스 방전이며, 그 출력은 10~300W이고, 시간은 600~3600s이고, 펄스 방전의 주파수는 1~1000HZ이며, 펄스의 듀티비는 1:1~1:500인 증착 과정을 적어도 1회 포함하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 5에 있어서,
상기 증착과정에서 플라즈마 방전 과정은 주기적 교체 방전이며,
증착 과정은 전처리 단계와 코팅 단계를 포함하는데, 전처리 단계의 플라즈마 방전 출력은 150~600W이고, 방전 지속시간은 60~450s이며, 그 다음 코팅단계로 진입하는데, 코팅 단계의 플라즈마는 주기적 교체 방전 출력하며, 그 출력은 10~300W이고, 시간은 600~3600s이고, 교차변화 주파수는 1~1000HZ이며, 플라즈마 주기적 교체 방전 출력 파형은 톱니 파형, 정현 파형, 방형파 파형, 전파정류 파형 혹은 반파정류 파형인 증착 과정을 적어도 1회 포함하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 1에 있어서,
상기 저 쌍극자 모멘트 유기물 단량체는 p-자일렌, 벤젠, 톨루엔, 사불화탄소, α-메틸스티렌, 디클로로 디파라자일렌, 디메틸실록산, 분자량이 500~50000인 폴리디메틸실록산, 알릴벤젠, 데카플루오로 비페닐, 데카플루오로 벤조페논, 퍼플루오로 알릴벤젠, 테트라플루오로에틸렌, 헥사플루오로프로필렌, 1H,1H-퍼플루오로 옥틸아민, 퍼플루오로도데실 아이오다이드, 퍼플루오로트리부틸아민, 1,8-다이오도 퍼플루오로옥탄, 퍼플루오로헥실 아이오다이드, 퍼플루오로부틸 아이오다이드, 퍼플루오로데실 아이오다이드, 퍼플루오로옥틸 아이오다이드, 1,4-디(2',3'-에폭시프로필)퍼플루오로부탄, 도데카플루오로-2-메틸-2-펜텐, 2-(퍼플루오로부틸) 에틸 메타크릴레이트, 2-(퍼플루오로옥틸)에틸 메타크릴레이트, 2-(퍼플루오로옥틸) 아이오도에탄, 퍼플루오로데실에틸 아이오다이드, 1,1,2,2-테트라하이드로퍼플루오로헥실 아이오다이드, 퍼플루오로부틸 에틸렌, 1H,1H,2H-퍼플루오로-1-데센, 2,4,6-트리(퍼플루오로헵틸)-1,3,5-트리아진, 퍼플루오로헥실 에틸렌, 3-(퍼플루오로-n-옥틸)-1,2-프로필렌 옥사이드, 퍼플루오로시클로에테르, 퍼플루오로도데실 에틸렌, 퍼플루오로도데실에틸 아이오다이드, 디브로모 p-자일렌, 1,1,4,4-테트라페닐-1,3-부타디엔을 포함하며,
상기 단일 작용기 불포화 불화탄소수지는 3-(퍼플루오로-5-메틸헥실)-2-하이드록시프로필 메타크릴레이트, 2-(퍼플루오로데실)에틸 메타크릴레이트, 2-(퍼플루오로헥실)에틸 메타크릴레이트, 2-(퍼플루오로도데실)에틸 아크릴레이트, 2-퍼플루오로옥틸에틸 아크릴레이트, 1H,1H,2H,2H-퍼플루오로옥틸 아크릴레이트, 2-(퍼플루오로부틸)에틸 아크릴레이트, (2H-퍼플루오로프로필)-2-아크릴레이트, (퍼플루오로시클로헥실)메타크릴레이트, 3,3,3-트리플루오로-1-프로핀, 1-에티닐-3,5-디플루오로벤젠 또는 4-에티닐트리플루오로톨루엔을 포함하며,
상기 이중결합, Si-Cl, Si-O-C, Si-N-Si, Si-O-Si 구조 혹은 환형 구조를 포함하는 유기 실리콘 단량체에서,
이중결합 구조를 포함하는 유기 실리콘 단량체는 알릴트리메톡시실란, 비닐트리에톡시실란, 비닐트리메틸실란, 3-부테닐트리메틸실란, 비닐트리스(메틸에틸케톡시미노)실란, 테트라메틸디비닐디실록산, 1,2,2-트리플루오로비닐트리페닐실란을 포함하고;
Si-Cl결합을 포함하는 유기 실리콘 단량체는 트리페닐클로로실란, 메틸비닐디클로로실란, 트리플루오로프로필트리클로로실란, 트리플루오로프로필메틸디클로로실란, 디메틸페닐클로로실란, 트리부틸클로로실란, 벤질디메틸클로로실란을 포함하고;
Si-O-C구조를 포함하는 유기 실리콘 단량체는 테트라메톡시실란, 트리메톡시하이드로실록산, n-옥틸트리에톡시실란, 페닐트리에톡시실란, 비닐트리(2-메톡시에톡시)실란, 트리에틸비닐실란, 헥사에틸시클로트리실록산, 3-(메타크릴옥시)프로필트리메톡시실란, 페닐트리(트리메틸실록시)실란, 디페닐디에톡시실란, 도데실트리메톡시실란, n-옥틸트리에톡시실란, 디메톡시실란, 3-클로로프로필트리메톡시실란을 포함하고;
Si-N-Si 혹은 Si-O-Si구조를 포함하는 유기 실리콘 단량체는 헥사메틸디실릴아민, 헥사메틸시클로트리실란아미노, 헥사메틸디실라잔, 헥사메틸디실록산을 포함하고;
환형 구조를 포함하는 유기 실리콘 단량체는 헥사메틸시클로트리실록산, 옥타메틸시클로테트라실록산, 헥사페닐시클로트리실록산, 데카메틸시클로펜타실록산, 옥타페닐시클로테트라실록산, 트리페닐하이드록시실란, 디페닐디하이드록시실란, 비스(트리페닐실릴)크로메이트, 트리플루오로프로필메틸시클로트리실록산, 2,2,4,4-테트라메틸-6,6,8,8-테트라페닐시클로테트라실록산, 테트라메틸테트라비닐시클로테트라실록산, 3-글리시딜옥시프로필트리에톡시실란, γ-글리시딜옥시프로필트리메톡시실란을 포함하고;
상기 다작용기 불포화 하이드로카본 및 하이드로카본 유도체는 1,3-부타디엔, 이소프렌, 1,4-펜타디엔, 에톡실화 트리메틸올프로판 트리아크릴레이트, 트리프로필렌글리콜 디아크릴레이트, 폴리에틸렌글리콜 디아크릴레이트, 1,6-헥산디올 디아크릴레이트, 에틸렌 글리콜 디아크릴레이트, 디에틸렌 글리콜 디비닐 에테르 또는 네오펜틸 글리콜 디아크릴레이트를 포함;하는 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
- 청구항 1에 있어서,
상기 단계(2)에서 플라즈마 방전 방식은 무선 주파수 방전, 마이크로웨이브 방전, 중간 주파수 방전, 고주파수 방전, 전기 스파크 방전이며, 상기 고주파수 방전과 중간 주파수 방전의 파형은 정현 혹은 이중극 펄스인 것을 특징으로 하는 변조구조를 갖는 고절연 나노 보호코팅층의 제조방법.
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| PCT/CN2018/082837 WO2019037446A1 (zh) | 2017-08-23 | 2018-04-12 | 一种具有调制结构的高绝缘纳米防护涂层的制备方法 |
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| CN107686986B (zh) * | 2017-08-23 | 2018-12-18 | 江苏菲沃泰纳米科技有限公司 | 一种调制结构的有机硅纳米防护涂层的制备方法 |
| CN107587120B (zh) * | 2017-08-23 | 2018-12-18 | 江苏菲沃泰纳米科技有限公司 | 一种具有调制结构的高绝缘纳米防护涂层的制备方法 |
| US11389825B2 (en) | 2017-08-23 | 2022-07-19 | Jiangsu Favored Nanotechnology Co., LTD | Methods for preparing nano-protective coating with a modulation structure |
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| EP3680029B1 (en) * | 2019-01-09 | 2023-06-07 | Europlasma nv | A plasma polymerisation method for coating a substrate with a polymer |
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| KR102856709B1 (ko) | 2020-06-09 | 2025-09-05 | 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 | 보호 코팅 및 그 제조 방법 |
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| CN115400930A (zh) * | 2021-05-26 | 2022-11-29 | 江苏菲沃泰纳米科技股份有限公司 | 一种等离子体聚合涂层、制备方法及器件 |
| CN115411420B (zh) * | 2021-05-26 | 2024-12-03 | 江苏菲沃泰纳米科技股份有限公司 | 一种具有涂层的电池及其制备方法 |
| CN114552201B (zh) * | 2022-04-22 | 2022-07-05 | 中国电子科技集团公司第二十九研究所 | 一种适用于高频印制天线的高透波高防腐涂层制备方法 |
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| KR102373702B1 (ko) | 2022-03-11 |
| JP2020531690A (ja) | 2020-11-05 |
| BR112020003338A2 (pt) | 2020-09-15 |
| BR112020003338B1 (pt) | 2024-03-12 |
| CN107587120A (zh) | 2018-01-16 |
| EP3674438B1 (en) | 2023-03-29 |
| EP3674438A1 (en) | 2020-07-01 |
| WO2019037446A1 (zh) | 2019-02-28 |
| CN107587120B (zh) | 2018-12-18 |
| EP3674438A4 (en) | 2020-09-02 |
| JP6937430B2 (ja) | 2021-09-22 |
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