KR20200095082A - 원자층 증착 장치 - Google Patents
원자층 증착 장치 Download PDFInfo
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- KR20200095082A KR20200095082A KR1020190012719A KR20190012719A KR20200095082A KR 20200095082 A KR20200095082 A KR 20200095082A KR 1020190012719 A KR1020190012719 A KR 1020190012719A KR 20190012719 A KR20190012719 A KR 20190012719A KR 20200095082 A KR20200095082 A KR 20200095082A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
도 2는 외곽 챔버 내 반응기들의 이동을 설명하기 위한 개략도이다.
도 3은 본 발명의 일 실시예와 관련된 원자층 증착장치의 일 작동상태를 나타내는 개략도이다.
101: 외곽 챔버
110: 제1 공급부
120: 제2 공급부
130: 제1 펌핑부
140: 제2 펌핑부
210, 220, 230, 240: 반응기
Claims (12)
- 회전축을 갖는 외곽 챔버;
외곽 챔버 내에 배치되며, 상기 회전축에 연결되어 외곽 챔버 내 제1 위치 및 제2 위치로 이동 가능하게 배치되며, 분말 수용공간을 갖는 하나 이상의 반응기;
외곽 챔버 내 제1 위치에 위치하는 반응기와 탈착 가능하게 결합되도록 마련되고, 반응기에 장착 시, 제1 증착층을 형성하기 위한 1종 이상의 소스 가스를 수용공간으로 분사하기 위한 제1 공급부 및 제1 공급부와 연결된 반응기에 탈착 가능하게 결합되며, 수용공간의 배기를 위한 제1 펌핑부를 포함하는 제1 증착부; 및
외곽 챔버 내 제2 위치에 위치하는 반응기와 탈착 가능하게 결합되도록 마련되고, 반응기에 장착 시, 제2 증착층을 형성하기 위한 1종 이상의 소스 가스를 수용공간으로 분사하기 위한 제2 공급부 및 제2 공급부와 연결된 반응기에 탈착 가능하게 결합되며, 수용공간의 배기를 위한 제2 펌핑부를 포함하는 제2 증착부를 포함하는, 원자층 증착장치. - 제 1 항에 있어서,
제1 증착부 및 제2 증착부는 반응기의 수용공간으로 각각 서로 다른 소스 가스를 공급하도록 마련된 원자층 증착장치. - 제 1 항에 있어서, 반응기는,
제1 또는 제2 공급부와 선택적으로 연결되기 위한 제1 단부 및 제1 단부의 반대방향에, 제1 또는 제2 펌핑부와 선택적으로 연결되기 위한 제2 단부를 포함하며,
제1 단부 및 제2 단부는 각각 외부로 개방되고,
제1 단부 및 제2 단부 사이에 수용공간이 위치하는 원자층 증착장치. - 제 1 항에 있어서,
반응기는 제1 단부 및 제2 단부에 각각 배치된 다공성 메쉬(mesh)를 포함하는 원자층 증착장치. - 제 4 항에 있어서,
제1 단부 측 다공성 메쉬는 제1 또는 제2 공급부가 반응기에 결합 시, 다공성 메쉬 및 공급부 사이에 버퍼 공간이 형성되도록 배치된 원자층 증착 장치. - 제 4 항에 있어서,
제2 단부 측 다공성 메쉬는 제1 또는 제2 펌핑부가 반응기에 결합 시, 다공성 메쉬와 펌핑부 사이에 버퍼 공간이 형성되도록 배치된 원자층 증착 장치. - 제 3 항에 있어서,
제1 또는 제2 공급부 및 반응기의 제1 단부 중 하나에는 결합 영역에 배치되는 실링부재가 마련되고, 나머지 하나에는 실링부재가 삽입되기 위한 삽입 홈이 마련된 원자층 증착 장치. - 제 3 항에 있어서,
제1 또는 제2 펌핑부 및 반응기의 제2 단부 중 하나에는 결합 영역에 배치되는 실링부재가 마련되고, 나머지 하나에는 실링부재가 삽입되기 위한 삽입 홈이 마련된 원자층 증착 장치. - 제 1 항에 있어서, 제1 및 제2 공급부 각각은,
2종 이상의 소스 가스 및 퍼지가스가 수용되기 위한 수용부;
수용부와 연결되며, 수용공간으로 소스 가스 및 퍼지가스를 분사하기 위한 분사부; 및
수용부와 분사부 사이에 마련된 밸브를 포함하는 원자층 증착 장치. - 제 9 항에 있어서,
제1 및 제2 공급부 각각은, 수용공간으로 어느 한 소스가스를 분사하고, 차례로 퍼지가스를 분사한 후, 또 다른 소스가스를 분사하도록 마련된 원자층 증착 장치. - 제 1 항에 있어서,
반응기는 제1 위치에서 제1 공급부 및 제1 펌핑부가 반응기로부터 각각 분리된 상태에서 제2 위치로 이동되도록 마련된 원자층 증착 장치. - 제 11 항에 있어서,
제1 공급부가 반응기로부터 분리될 때, 밸브는 닫힘 상태로 유지되는 원자층 증착 장치.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190012719A KR20200095082A (ko) | 2019-01-31 | 2019-01-31 | 원자층 증착 장치 |
| US17/280,054 US20220033969A1 (en) | 2019-01-31 | 2020-01-23 | Coating apparatus |
| EP20749792.6A EP3919652B1 (en) | 2019-01-31 | 2020-01-23 | Coating device |
| ES20749792T ES2970197T3 (es) | 2019-01-31 | 2020-01-23 | Dispositivo de recubrimiento |
| PCT/KR2020/001174 WO2020159162A1 (ko) | 2019-01-31 | 2020-01-23 | 코팅 장치 |
| HUE20749792A HUE065178T2 (hu) | 2019-01-31 | 2020-01-23 | Bevonóeszköz |
| CN202080005281.3A CN112739850B (zh) | 2019-01-31 | 2020-01-23 | 涂覆设备 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190012719A KR20200095082A (ko) | 2019-01-31 | 2019-01-31 | 원자층 증착 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20200095082A true KR20200095082A (ko) | 2020-08-10 |
Family
ID=71840208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190012719A Ceased KR20200095082A (ko) | 2019-01-31 | 2019-01-31 | 원자층 증착 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220033969A1 (ko) |
| EP (1) | EP3919652B1 (ko) |
| KR (1) | KR20200095082A (ko) |
| CN (1) | CN112739850B (ko) |
| ES (1) | ES2970197T3 (ko) |
| HU (1) | HUE065178T2 (ko) |
| WO (1) | WO2020159162A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230031618A (ko) * | 2021-08-27 | 2023-03-07 | (주)아이작리서치 | 파우더용 원자층 증착 장치 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3473954A (en) * | 1965-12-08 | 1969-10-21 | Ethyl Corp | Method and apparatus for tunnel plating |
| KR100497748B1 (ko) * | 2002-09-17 | 2005-06-29 | 주식회사 무한 | 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법 |
| US20060073276A1 (en) * | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
| EP1957688A2 (en) * | 2005-11-22 | 2008-08-20 | Genus, Inc. | Small volume symmetric flow single wafer ald apparatus |
| US8048226B2 (en) * | 2007-03-30 | 2011-11-01 | Tokyo Electron Limited | Method and system for improving deposition uniformity in a vapor deposition system |
| KR100888067B1 (ko) * | 2007-05-18 | 2009-03-11 | 한양대학교 산학협력단 | 배치형 원자층 증착장치 및 증착방법 |
| KR101463897B1 (ko) * | 2008-05-23 | 2014-11-21 | 주성엔지니어링(주) | 원료 공급 장치 및 이를 구비하는 박막 증착 장치 |
| DE102009037290A1 (de) * | 2009-04-24 | 2010-11-11 | Singulus Technologies Ag | Transporteinrichtung mit einem auslenkbaren Dichtrahmen |
| SG11201406817XA (en) * | 2012-05-14 | 2014-12-30 | Picosun Oy | Powder particle coating using atomic layer deposition cartridge |
| JP2016508544A (ja) * | 2013-01-23 | 2016-03-22 | ピコサン オーワイPicosun Oy | 粒子材料の処理のための方法及び装置 |
| KR101541361B1 (ko) * | 2013-07-15 | 2015-08-03 | 광주과학기술원 | 나노코팅 입자 제조를 위한 유동층 원자층 증착 장치 |
| TWI643971B (zh) * | 2014-01-05 | 2018-12-11 | 美商應用材料股份有限公司 | 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積 |
| CN105386011B (zh) * | 2015-12-17 | 2017-09-22 | 华中科技大学 | 一种基于行星流化的粉体原子层沉积装置 |
| CN105951058B (zh) * | 2016-05-26 | 2018-09-07 | 华中科技大学 | 一种基于流化床的纳米颗粒空间隔离原子层沉积设备及方法 |
| KR101868703B1 (ko) * | 2016-12-14 | 2018-06-18 | 서울과학기술대학교 산학협력단 | 분말 코팅 반응기 |
| KR102367271B1 (ko) | 2017-07-28 | 2022-02-23 | 엘지디스플레이 주식회사 | 게이트 구동회로 및 이를 이용한 표시장치 |
-
2019
- 2019-01-31 KR KR1020190012719A patent/KR20200095082A/ko not_active Ceased
-
2020
- 2020-01-23 WO PCT/KR2020/001174 patent/WO2020159162A1/ko not_active Ceased
- 2020-01-23 US US17/280,054 patent/US20220033969A1/en not_active Abandoned
- 2020-01-23 CN CN202080005281.3A patent/CN112739850B/zh active Active
- 2020-01-23 EP EP20749792.6A patent/EP3919652B1/en active Active
- 2020-01-23 HU HUE20749792A patent/HUE065178T2/hu unknown
- 2020-01-23 ES ES20749792T patent/ES2970197T3/es active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230031618A (ko) * | 2021-08-27 | 2023-03-07 | (주)아이작리서치 | 파우더용 원자층 증착 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112739850A (zh) | 2021-04-30 |
| EP3919652B1 (en) | 2023-11-01 |
| EP3919652A1 (en) | 2021-12-08 |
| CN112739850B (zh) | 2023-03-28 |
| HUE065178T2 (hu) | 2024-05-28 |
| ES2970197T3 (es) | 2024-05-27 |
| EP3919652A4 (en) | 2022-03-16 |
| US20220033969A1 (en) | 2022-02-03 |
| WO2020159162A1 (ko) | 2020-08-06 |
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