KR900007115A - 전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터. - Google Patents

전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터. Download PDF

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Publication number
KR900007115A
KR900007115A KR1019880014302A KR880014302A KR900007115A KR 900007115 A KR900007115 A KR 900007115A KR 1019880014302 A KR1019880014302 A KR 1019880014302A KR 880014302 A KR880014302 A KR 880014302A KR 900007115 A KR900007115 A KR 900007115A
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KR
South Korea
Prior art keywords
thin film
film transistor
amorphous silicon
silicon thin
electrodes
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Application number
KR1019880014302A
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English (en)
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KR960002104B1 (ko
Inventor
소희섭
전명철
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최근선
주식회사 금성사
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Priority to KR1019880014302A priority Critical patent/KR960002104B1/ko
Publication of KR900007115A publication Critical patent/KR900007115A/ko
Application granted granted Critical
Publication of KR960002104B1 publication Critical patent/KR960002104B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 의한 비정질 규소 박막트랜지스터의 배열구조를 나타낸 단면도.
제5도는 제4도의 비정질 규소 박막트랜지스터가 액정 디스플레이에 사용된 일례를 나타낸 단면도.
제6도는 제5도의 비정질 규소 박막트랜지스터의 상부기판 평면도.
제7도는 본 발명에 의한 상부기판 제작공정의 일례를 나타낸 제작공정도.

Claims (1)

  1. 액정 디스플레이용 비정질 규소 박막트랜지스터에 있어서, 게이트 전극(2)과 소오스 전극(7)이 교차하지 않도록 소오스 전극(7)을 게이트 전극(2)과 평행하게 끌어내어 공통전극인 접지로하고, 칼라필터(10)가 부착되어 있는 상부기판의 투명전도막(8')과 블랙 매트릭스(12)를 영상 신호용 전극으로 배열한 구조를 가진 것을 특징으로 하는 전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014302A 1988-10-31 1988-10-31 전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터 Expired - Fee Related KR960002104B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880014302A KR960002104B1 (ko) 1988-10-31 1988-10-31 전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880014302A KR960002104B1 (ko) 1988-10-31 1988-10-31 전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터

Publications (2)

Publication Number Publication Date
KR900007115A true KR900007115A (ko) 1990-05-09
KR960002104B1 KR960002104B1 (ko) 1996-02-10

Family

ID=19278938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014302A Expired - Fee Related KR960002104B1 (ko) 1988-10-31 1988-10-31 전극이 교차하지 않는 배열구조를 가진 비정질 규소 박막트랜지스터

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Country Link
KR (1) KR960002104B1 (ko)

Also Published As

Publication number Publication date
KR960002104B1 (ko) 1996-02-10

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