KR910013544A - 마이크로파 집적회로 - Google Patents

마이크로파 집적회로 Download PDF

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Publication number
KR910013544A
KR910013544A KR1019890019147A KR890019147A KR910013544A KR 910013544 A KR910013544 A KR 910013544A KR 1019890019147 A KR1019890019147 A KR 1019890019147A KR 890019147 A KR890019147 A KR 890019147A KR 910013544 A KR910013544 A KR 910013544A
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South Korea
Prior art keywords
integrated circuit
microwave integrated
variable capacitance
control unit
circuit according
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KR1019890019147A
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KR930011384B1 (ko
Inventor
노부오 시가
Original Assignee
나까하라 쯔네오
스미도모덴기고오교오 가부시기가이샤
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Publication of KR910013544A publication Critical patent/KR910013544A/ko
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Publication of KR930011384B1 publication Critical patent/KR930011384B1/ko
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)

Abstract

내용 없음.

Description

마이크로파 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일실시예에 대한 블록선도,
제3도는 실시예의 신호된 임피이던스 Zopt의 입력반사계수 S11*에 대한 스미드챠아트.

Claims (7)

  1. 전계효과 트랜지스터(5)로서 구성된 초단증폭부와, 각각 직렬연결된 인덕턴스소자(6)와 가변용량소자(7)로서 구성된 직렬회로부로서 구성된 집적된 복수의 회로부품을 갖는 마이크로파집적회로에 있어서, 상기 직렬회로부의 한쪽끝은 상기 전계효과 트랜지스터(5)의 소오스에 연결되고 다른한쪽끝은 접지된것을 특징으로 하는 마이크로파집적회로.
  2. 제1항에 있어서, 외부 입력신호에 의해 가변용량소자(7)의 캐패시턴스를 제어하기위한 제어부를 포함한 것을 특징으로하는 마이크로파집적회로.
  3. 제2항에 있어서, 상기의 제어하기위위한 제어부는 각각의 한쪽끝이 직렬로 연결되어 상기의 가변용량소자(7)와 상기의 인덕턴스소자(6)의 연결부에 연결되고 다른 한쪽끝은 외부단자(10)에 연결된 마이크로스트립(8)과 저항(9)의 회로로서 구성된 것을 특징으로하는 마이크로파 집적회로.
  4. 제1항에 있어서, 상기 전제효과 트랜지스터(5)의 게이트가 상기 마이크로파 집적회로의 입력단자(1)에 전기적으로 연결된것을 특징으로하는 마이크로파 집적회로.
  5. 제1항에 있어서, 상기의 가변용량소자(1)는 가변용량 다이오우드로서 구성된 것을 특징으로하는 마이크로파 집적회로.
  6. 제3항에 있어서, 상기의 인덕턴스소자(6)는 마이크로스트립으로서 구성된것을 특징으로하는 마이크로파 집적회로.
  7. 제2항에 있어서, 상기의 마이크로파 집적회로를 제어하는 방법은 상기 가변용량소자(7)의 캐패시턴스를 L/1/W2C을 만족시키는 범위에서(여기서, L은 상기 인덕턴스소자(6)의 인덕턴스, W는 사용주파수 대) 변화시키는 것을 특징으로하는 마이크로파 집적회로.
    ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
KR1019890019147A 1988-12-22 1989-12-21 마이크로파 집적회로 Expired - Fee Related KR930011384B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63324357A JPH02170602A (ja) 1988-12-22 1988-12-22 マイクロ波集積回路
JP324357 1988-12-22
JP63-324357 1988-12-22

Publications (2)

Publication Number Publication Date
KR910013544A true KR910013544A (ko) 1991-08-08
KR930011384B1 KR930011384B1 (ko) 1993-12-04

Family

ID=18164882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890019147A Expired - Fee Related KR930011384B1 (ko) 1988-12-22 1989-12-21 마이크로파 집적회로

Country Status (6)

Country Link
US (1) US5010305A (ko)
EP (1) EP0374744B1 (ko)
JP (1) JPH02170602A (ko)
KR (1) KR930011384B1 (ko)
CA (1) CA2005182A1 (ko)
DE (1) DE68922594T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03296311A (ja) * 1990-04-13 1991-12-27 Sumitomo Electric Ind Ltd 低雑音アンプ
JPH0575357A (ja) * 1991-09-10 1993-03-26 Mitsubishi Electric Corp 低雑音増幅器
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor
US5410745A (en) * 1993-05-20 1995-04-25 Motorola, Inc. Detector and video amplifier
JPH0746064A (ja) * 1993-07-29 1995-02-14 Nec Corp 負荷整合回路可変型高効率マイクロ波増幅器
US5789799A (en) * 1996-09-27 1998-08-04 Northern Telecom Limited High frequency noise and impedance matched integrated circuits
US6121840A (en) * 1996-12-24 2000-09-19 Murata Manufacturing Co., Ltd. High-frequency amplifier
JP4220694B2 (ja) * 2001-03-27 2009-02-04 パナソニック株式会社 高周波可変利得増幅装置
JP4952713B2 (ja) * 2006-03-20 2012-06-13 富士通株式会社 アナログ回路
US8803599B2 (en) * 2010-05-26 2014-08-12 Stmicroelectronics, Inc. Dendrite resistant input bias network for metal oxide semiconductor field effect transistor (MOSFET) devices
KR101503146B1 (ko) 2013-08-05 2015-03-16 삼성전기주식회사 저잡음 증폭기 및 그를 이용한 이득 조절 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670722A (en) * 1981-03-09 1987-06-02 The United States Of America As Represented By The Secretary Of The Navy FET oscillator having controllable reactance element-controlled two port feedback network
US4458215A (en) * 1981-08-17 1984-07-03 Rca Corporation Monolithic voltage controlled oscillator
JPS5922416A (ja) * 1982-07-28 1984-02-04 Fujitsu Ten Ltd 高周波増幅回路
US4658220A (en) * 1985-09-06 1987-04-14 Texas Instruments Incorporated Dual-gate, field-effect transistor low noise amplifier
US4683443A (en) * 1986-01-27 1987-07-28 The United States Of America As Represented By The Secretary Of The Air Force Monolithic low noise amplifier with limiting

Also Published As

Publication number Publication date
EP0374744A2 (en) 1990-06-27
EP0374744B1 (en) 1995-05-10
EP0374744A3 (en) 1991-05-29
CA2005182A1 (en) 1990-06-22
US5010305A (en) 1991-04-23
JPH02170602A (ja) 1990-07-02
KR930011384B1 (ko) 1993-12-04
DE68922594T2 (de) 1996-02-01
DE68922594D1 (de) 1995-06-14

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