KR920700785A - 하도층상에 감광성 내식막 조성물을 피복하는 방법 - Google Patents

하도층상에 감광성 내식막 조성물을 피복하는 방법

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Publication number
KR920700785A
KR920700785A KR1019910701249A KR910701249A KR920700785A KR 920700785 A KR920700785 A KR 920700785A KR 1019910701249 A KR1019910701249 A KR 1019910701249A KR 910701249 A KR910701249 A KR 910701249A KR 920700785 A KR920700785 A KR 920700785A
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South Korea
Prior art keywords
photoresist
photoresist composition
undercoat
liquid
composition
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KR1019910701249A
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KR0127145B1 (ko
Inventor
에스. 다락트치에프 이반
Original Assignee
원본미기재
올린 헌트 스페셜티 프로덕츠 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음

Description

하도층상에 감광성 내식막 조성물을 피복하는 방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (18)

  1. (a) 용매 중 감광성 내식막 고형분을 포함하는 액체 감광성 내식마 조성물(여기에서, 감광성 내식막 조성물 중 고형분 함량은 약 10내지 약22중량%이다)을 형성시키고; (b) 상기 액체 감광성 내식막 조성물의 미세분무소적을 형성시킨 다음; (c) 하도층 표면상에 상기 미세 분무 소적을 중력으로서 고정시켜, 하도체상에 감광성 내식막 피복물을 형성시키고; (d)상기 피복된 하도층을 예정된 회전속도 및 예정된 시간동안 회전시켜 감광성 내식막 피복물 중의 거의 모든 용매를 제거하고 하도층상에 일정한 두께의 감광성 내식막 고형분 필름을 형성시키는 단계를 특징으로 하여, 하도층상에 일정한 두께의 감광성 내식막 고형분 필름을 적용시키는 방법.
  2. 제1항에 있어서, 미세 감광성 내식막 분무 소적을 단계(b)에서 초음파 분무 노즐을 사용하여 형성시킴을 특징으로 하는 방법.
  3. 제2항에 있어서, 액체 감광성 내식막 조성물을 초음파 분무노즐에 중력으로 공급하는 방법.
  4. 제3항에 있어서, 액체 감광성 내식막 조성물이 약 2내지 6초동안 피복되는 하도충당 약 10 내지 20㎖/분의 속도로 상기 초음파 분무 노즐내로 공급됨을 특징으로 하는 방법.
  5. 제1항에 있어서, 상기 감광성 내식막 조성물의 고형분 함량이 약 12내지 약 20중량%임을 특징으로 하는 방법.
  6. 제1항에 있어서, 감광성 내식막 고형분 함량이 약 15내지 약 19중량%임을 특징으로 하는 방법.
  7. 제1항에 있어서, 하도층이 실리콘 와이퍼임을 특징으로 하는 방법.
  8. 제1항에 있어서, 피복단계(c)를 하도층을 회전시커며 수행함을 특징으로 하는 방법.
  9. 제8항에 있어서, 피복단계(c)를 약 500내지 약 2,000 rpm 의 회전속도로 수행함을 특징으로 하는 방법.
  10. 제1항에 있어서, 피복단계(d)를 약 1000내지 약 6000 rpm 이 회전속도로 약 20내지 60초 동안 수행함을 특징으로 하는 방법.
  11. 제1항에 있어서, 균일한 두께의 감광성 내식막 고형분 필름의 두께가 약 0.5 내지 1.5μ임을 특징으로 하는 방법.
  12. (a)용매 중 감광성 내식막 고형분을 포함하는 액체 감광성 내식막 조성루(여기에서, 감광성 내식막 조성물 중 고형분 함량은 약 12내지 약 20중량%이다)을 형성시키고, (b) 상기의 액체 감광성 내식막 조성물을 약 10내지 20㎖/분의 속도에서 초음파 분무 노즐에 중력으로 공급하며, (c) 상기 액체 감광성 내식막 조성물을 초음파 분무 노즐을 통과시킴으로써 상기 액체 감광성 내식막 조성물의 미세분무 소적을 형성시킨 다음,(d) 하도충당 2 내지 6초의 고정시간에 하도충상에 상기의 미세 분무 소적을 고정시킴으로써 하도충상에 감광성 내식막 피복물을 형성시키고, (d) 상기 피복된 하도층을 약 1000내지 약 6000rpm의 예정된 회전속도 및 약 20내지 60초의 예정된 시간 동안 회전시켜 상기 하도층상에 일정한 두께의 감광성 내식막 고형분 필름을 형성시키는 단계를 특징으로 하여, 하도층상에 일정두께의 감광성 내식막 고형분 필름을 적용시키는 방법
  13. 제12항에 있어서, 상기 감광성 내식막 조성물의 고형분 함량이 약 15내지 약 19중량%임을 특징으로 하는 방법.
  14. 제13항에 있어서, 하도층이 실리콘 와이퍼임을 특징으로 하는 방법.
  15. 제14항에 있어서, 피복단계(c)를 하도층을 회전시키며 수행함을 특징으로 하는 방법.
  16. 제15항에 있어서, 피복단계(c)를 약 500 내지 약 2,000rpm의 회전속도로 수행함을 특징으로 하는 방법.
  17. 제16항에 있어서, 회전단계(e)를 약 1500 내지 약 5000rpm의 회전속도로 수행함을 특징으로 하는 방법.
  18. 제17항에 있어서, 균일한 두께의 감광성 내식막 고형분 필름의 두께가 약 0.5내지 1.5μ임을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910701249A 1989-04-05 1990-03-27 기판 위에 감광성 내식막 조성물을 피복하는 방법 Expired - Fee Related KR0127145B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/333,519 US4996080A (en) 1989-04-05 1989-04-05 Process for coating a photoresist composition onto a substrate
US07/333,519 1989-04-05
US07/333519 1989-04-05
PCT/US1990/001623 WO1990011837A1 (en) 1989-04-05 1990-03-27 Process for coating a photoresist composition onto a substrate

Publications (2)

Publication Number Publication Date
KR920700785A true KR920700785A (ko) 1992-08-10
KR0127145B1 KR0127145B1 (ko) 1997-12-29

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KR1019910701249A Expired - Fee Related KR0127145B1 (ko) 1989-04-05 1990-03-27 기판 위에 감광성 내식막 조성물을 피복하는 방법

Country Status (7)

Country Link
US (1) US4996080A (ko)
EP (1) EP0466770B1 (ko)
JP (1) JP2550440B2 (ko)
KR (1) KR0127145B1 (ko)
AU (1) AU5401190A (ko)
DE (1) DE69030497T2 (ko)
WO (1) WO1990011837A1 (ko)

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Also Published As

Publication number Publication date
KR0127145B1 (ko) 1997-12-29
AU5401190A (en) 1990-11-05
US4996080A (en) 1991-02-26
EP0466770B1 (en) 1997-04-16
EP0466770A1 (en) 1992-01-22
JPH04504377A (ja) 1992-08-06
EP0466770A4 (en) 1993-10-20
WO1990011837A1 (en) 1990-10-18
JP2550440B2 (ja) 1996-11-06
DE69030497T2 (de) 1997-07-24
DE69030497D1 (de) 1997-05-22

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