KR930014902A - Ito 막의 형성방법 - Google Patents

Ito 막의 형성방법 Download PDF

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Publication number
KR930014902A
KR930014902A KR1019910024659A KR910024659A KR930014902A KR 930014902 A KR930014902 A KR 930014902A KR 1019910024659 A KR1019910024659 A KR 1019910024659A KR 910024659 A KR910024659 A KR 910024659A KR 930014902 A KR930014902 A KR 930014902A
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KR
South Korea
Prior art keywords
ito film
film
formation method
sputtering
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019910024659A
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English (en)
Inventor
김태훈
Original Assignee
한형수
삼성코닝 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한형수, 삼성코닝 주식회사 filed Critical 한형수
Priority to KR1019910024659A priority Critical patent/KR930014902A/ko
Publication of KR930014902A publication Critical patent/KR930014902A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

스퍼트링 장치를 사용하여 산화물 타게트로 유리기판에 ITO 막을 형성하는 막에 있어서, 상기 스프터링 장치내의 캐소드 및 애노드에 마이너스(-) 바이어스를 인가한 상태에서 스퍼터링을 실시하여 산소 음이온(O2)의 충격에 기인한 저급 절연성 산화물의 형성을 억제함으로써 성막의 전기 전도도가 높고 광투과 율이 우수한 막질형성을 실현한 ITO 막의 형성방법.

Description

ITO 막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 이 발명의 실시예를 설명하기 위해 보인 바이어스 스퍼터링 장치의 단면도이다.

Claims (3)

  1. 스퍼트링 장치를 사용하여 산화물 타게트로 유리기판에 ITO 막을 형성하는 방법에 있어서, 상기 스프터링 장치내의 캐소드 및 애노드에 마이너스(-) 바이어스를 인가한 상태에서 스퍼터링을 실시하는 ITO 막의 형성방법.
  2. 제1항에 있어서, 상기 산화물 타게트는 In2O2-SnO2계 산화물인 것을 특징으로 하는 ITO 막의 형성방법.
  3. 제1항에 있어서, 상기 애노드에는 -60~100V, 상기 캐소드에는 -0.5~-1.5kV의 DC 전압을 인가하는 것을 특징으로 하는 ITO 막의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910024659A 1991-12-27 1991-12-27 Ito 막의 형성방법 Ceased KR930014902A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910024659A KR930014902A (ko) 1991-12-27 1991-12-27 Ito 막의 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024659A KR930014902A (ko) 1991-12-27 1991-12-27 Ito 막의 형성방법

Publications (1)

Publication Number Publication Date
KR930014902A true KR930014902A (ko) 1993-07-23

Family

ID=67345792

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024659A Ceased KR930014902A (ko) 1991-12-27 1991-12-27 Ito 막의 형성방법

Country Status (1)

Country Link
KR (1) KR930014902A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100494677B1 (ko) * 1997-12-22 2005-11-11 비오이 하이디스 테크놀로지 주식회사 액정표시소자의제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100494677B1 (ko) * 1997-12-22 2005-11-11 비오이 하이디스 테크놀로지 주식회사 액정표시소자의제조방법

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