KR970013541A - 단파 수직 캐비티 표면 방출 레이저 및 그 제조 방법 - Google Patents

단파 수직 캐비티 표면 방출 레이저 및 그 제조 방법 Download PDF

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KR970013541A
KR970013541A KR1019960033491A KR19960033491A KR970013541A KR 970013541 A KR970013541 A KR 970013541A KR 1019960033491 A KR1019960033491 A KR 1019960033491A KR 19960033491 A KR19960033491 A KR 19960033491A KR 970013541 A KR970013541 A KR 970013541A
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refractive index
layer
mirror stack
layers
active region
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KR100440650B1 (ko
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람다니 자말
에스. 레비 마이클
싱-청리
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

단파 VCSEL은, 기판상에 위치하며 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제1미러 스택과, 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제2미러 스택과, 제1스택과 제2스택 사이에 삽입된 활성 영역을 포함하는데, 활성 영역은 GaInP의 장벽층이 삽입된 GaAsP 양자화 웰층으로 형성되며 양자화웰층과 장벽층은 실질상 동일 격자 부정합과 반대 격자 부정합을 갖는다.

Description

단파 수직 캐비티 표면 방출 레이저 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도5는 본 발명에 따른 VCSEL의 제조시의 최종 단계의 단순화된 단면도.

Claims (3)

  1. 기판과; 상기 기판상에 위치하며, 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제1전도형의 제1미러 스택과; 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제2전도형의 제2미러 스택 및; 상기 제1미러 스택과 상기 제2미러 스택 사이에 삽입되며 결정학적으로 동일 변형과 반대 변형을 교대로 갖는 다수의 교호 변형층으로 형성되는 활성 영역을 포함하는 것을 특징으로 하는 단파수직 캐비티 표면 방출 레이저.
  2. 기판과; 상기 기판상에 위치하며, 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제1전도형의 제1미러스택과; 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제2전도형의 제2미러 스택 및; 상기 제1미러 스택과 상기 제2미러 스택 사이에 삽입되며, GaInP의 장벽층이 삽입된 다수의 GaAsP의 양자화웰 층으로 형성되는 활성 영역을 포함하는데, 상기 양자화웰층과 상기 장벽층은 실질상 동일 격자 부정합과 반대 부정합을 각각 가지며, 상기 활성 영역은 한 쌍의 한정층 사이에 삽입되는 것을 특징으로 하는 단파 수직 캐피티 표면 방출 레이저.
  3. 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제1전도형의 제1미러 스택을 형성하는 단계와; 상기 제1미러 스택상에 제1한정층을 형성하는 단계와; 상기 제1한정층상에 결정학적으로 동일 및 반대 변형을 갖는 다수의 교호 변형층으로 형성되는 활성 영역을 형성하는 단계와; 상기 활성 영역상에 제2한정층을 형성하는 단계 및; 상기 제2한정층상에 상대적으로 고굴절율인 층과 상대적으로 저굴절율인 층의 다수의 쌍으로 형성되는 제2전도형의 제2미러 스택을 형성하는 단계를 포함하는 것을 특징으로 하는 단파 수직 캐비티 표면 방출 레이저의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960033491A 1995-08-28 1996-08-13 단파장수직캐버티표면발광레이저및그제조방법 Expired - Fee Related KR100440650B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US520,061 1995-08-28
US08/520,061 US5633886A (en) 1995-08-28 1995-08-28 Short wavelength VCSEL with Al-free active region

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KR970013541A true KR970013541A (ko) 1997-03-29
KR100440650B1 KR100440650B1 (ko) 2004-10-14

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US (1) US5633886A (ko)
EP (1) EP0760545B1 (ko)
JP (1) JPH09107153A (ko)
KR (1) KR100440650B1 (ko)
DE (1) DE69621719T2 (ko)
TW (1) TW317037B (ko)

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Publication number Publication date
DE69621719D1 (de) 2002-07-18
DE69621719T2 (de) 2002-10-31
KR100440650B1 (ko) 2004-10-14
US5633886A (en) 1997-05-27
TW317037B (ko) 1997-10-01
EP0760545B1 (en) 2002-06-12
EP0760545A1 (en) 1997-03-05
JPH09107153A (ja) 1997-04-22

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