KR970052150A - 반도체제조장치의 냉각방법 - Google Patents

반도체제조장치의 냉각방법 Download PDF

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Publication number
KR970052150A
KR970052150A KR1019950059291A KR19950059291A KR970052150A KR 970052150 A KR970052150 A KR 970052150A KR 1019950059291 A KR1019950059291 A KR 1019950059291A KR 19950059291 A KR19950059291 A KR 19950059291A KR 970052150 A KR970052150 A KR 970052150A
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South Korea
Prior art keywords
cooling
ion implantation
beamline
semiconductor manufacturing
wafer
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KR1019950059291A
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Inventor
이종오
박동철
제성태
김학영
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김광호
삼성전자 주식회사
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Priority to KR1019950059291A priority Critical patent/KR970052150A/ko
Publication of KR970052150A publication Critical patent/KR970052150A/ko
Withdrawn legal-status Critical Current

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Abstract

본 발명은 반도체제조장치인 이온주입시스템을 냉각시키는 방법에 관한 것으로서, 웨이퍼로 도프되는 불순물원소의 이온을 생성하는 이온주입소스부(10)와, 이온에 필요한 에너지를 부여하는 빔라인부(20)에 각각 별도로 설치된 제1,2냉각경로를 통하여 냉각용 초순수가 흐르도록 하는 단계를 포함한다. 상술한 냉각방법에 의한면, 각 냉각경로에 금속오염이 발생하더라도 이온주입소스부(10)와 빔라인부(20)의 전기적 단락발생을 방지할 수 있으므로, 상기 이온주입장치의 안정성을 향상시킬 수 있다.

Description

반도체제조장치의 냉각방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 방법으로 이온주입시스템을 냉각하는 것을 보여주고 있는 도면.

Claims (2)

  1. 웨이퍼로 도프되는 불순물원소의 이온을 생성하는 이온주입소스부(10)와, 이온에 필요한 에너지를 부여하는 빔라인부(20), 그리고 웨이퍼가공실의 진공 및 대기상태를 조절하여 웨이퍼의 장입 및 인출을 원활하게 할 수 있도록 하는 로드록부를 포함하는 엔드스테이션부(30) 등으로 구성된 반도체제조장치의 냉각방법에 있어서, 상기 이온주입소스부(10)와 상기 빔라인부(20)에 각각 별도로 설치된 제1,2냉각경로를 통하여 냉각용 초순수가 흐르도록 하는 냉각방법.
  2. 제1항에 있어서, 상기 빔라인부(20)에 설치된 제2냉각라인이 엔드스테이션부 (30)까지 포함하여 냉각되게 하는 것을 특징으로 하는 반도체제조장치의 냉각방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950059291A 1995-12-27 1995-12-27 반도체제조장치의 냉각방법 Withdrawn KR970052150A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950059291A KR970052150A (ko) 1995-12-27 1995-12-27 반도체제조장치의 냉각방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950059291A KR970052150A (ko) 1995-12-27 1995-12-27 반도체제조장치의 냉각방법

Publications (1)

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KR970052150A true KR970052150A (ko) 1997-07-29

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KR1019950059291A Withdrawn KR970052150A (ko) 1995-12-27 1995-12-27 반도체제조장치의 냉각방법

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KR (1) KR970052150A (ko)

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