KR970052721A - 반도체장치의 제조방법 및 반도체제조장치 - Google Patents

반도체장치의 제조방법 및 반도체제조장치 Download PDF

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KR970052721A
KR970052721A KR1019960071330A KR19960071330A KR970052721A KR 970052721 A KR970052721 A KR 970052721A KR 1019960071330 A KR1019960071330 A KR 1019960071330A KR 19960071330 A KR19960071330 A KR 19960071330A KR 970052721 A KR970052721 A KR 970052721A
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Prior art keywords
polishing
semiconductor substrate
semiconductor
zeta potential
slurry
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KR100222186B1 (ko
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나오토 미야시타
준 다카야스
마리코 시모무라
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니시무로 타이조
가부시키가이샤 도시바
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

반도체기판의 CMP처리에 있어서, 효과적인 후처리방법 및 이 방법을 실시하기 위한 반도체제조장치를 제공한다.
반도체기판 표면에 슬러리를 공급하면서 이 반도체기판 표면의 피폴리싱막을 연마포에 의해 폴리싱하는 공정과, 이 폴리싱이 종료한 시점에서 슬러리의 공급을 중지하고, 상기 반도체기판 표면에 부착한 상기 슬러리의 연마입자가 갖는 제타전위와 상기 피폴리싱막이 갖는 제타전위가 동일한 극성으로 되도록 조정하는 공정을 갖춘다. 반도체기판과 슬러리에 포함되는 연마입자의 제타전위를 동일한 극성으로 되도록, 더욱이 제타전위치의 절대치를 가능한한 가깝도록 이온수의 pH를 조정함으로써, 폴리싱 레이트 및 균일성을 손상하지 않고 연마입자의 반도체기판 표면으로의 흡착을 방지하고, 그 저(低)더스트(dust)화를 실현한다.

Description

반도체장치의 제조방법 및 반도체제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체제조장치의 단면도.
제2도는 본 발명에 이용되는 재료의 제타전위의 pH의존성을 나타낸 특성도.
제3도는 본 발명 및 종래기술에 의해 얻어진 웨이퍼의 표면상태를 나타낸 평면도.
제4도는 종래기술의 후처리폴리싱에 있어서의 워터린스 시간의 경과에 따른 pH의 변화를 설명하는 pH-워터린스 특성도.
제5도는 본 발명의 후처리폴리싱에 있어서의 이온수린스 시간의 경과에 따른 pH의 변화를 설명하는 pH-이온수린스 특성도.
제6도는 본 발명에 이용되는 재료의 제타전위의 pH의존성을 나타낸 특성도.
제7도는 본 발명에 의해 형성된 반도체기판의 평탄화방법을 설명하는 공정단면도이다.
* 도면의 주요부분에 대한 부호의 설명
1 : 반도체기판 2 : CVD산화막
3 : 폴리실리콘 배선 4 : 스토퍼막(질화규소)
5 : 凸부 6 : 평탄부
20 : 웨이퍼 21 : 스테이지
22 : 베아링 23 : 연마반받침
24 : 연마반 25 : 연마포
26 : 구동시프트 27 : 모터
28 : 회전벨트 29 : 템플레이트
30 : 흡착포 31 : 흡착반
32 : 구동시프트 33 : 모터
34,35 : 기어 36 : 구동대
37 : 실린더 38 : 입자(더스트(dust))
40 : 전해이온수 생성장치 41 : 이온수 공급파이프
42 : pH미터

Claims (2)

  1. 반도체기판 표면에 연마제를 공급하면서 이 반도체기판 표면의 피폴리싱막을 연마포를 이용하여 폴리싱하는 공정과, 상기 피폴리싱막을 소정 두께까지 폴리싱하고, 이 폴리싱이 종료한 시점에서 상기 연마제의 공급을 중지하고, 상기 반도체기판 표면에 부착한 상기 연마제의 연마입자가 갖는 제타전위와 상기 피폴싱막이 갖는 제타전위가 동일한 극성으로 되도록 조정하는 공정을 구비하여 이루어진 것을 특징으로 하는 반도체장치의 제조방법.
  2. 표면에 연마포(25)를 고정시킨 연마반(24)과, 피처리기판(20)을 고정하는 흡착반(31), 상기 연마반(24) 또는 상기 흡착반(31) 또는 이 양자를 회전시키는 구동수단(26,27,28,33,34,35), 상기 연마포(25)에 연마제를 공급하는 수단 및, 상기 연마포(25)에 이온수를 공급하는 수단(40,41)을 구비하여 이루어진 것을 특징으로 하는 반도체제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960071330A 1995-12-27 1996-12-24 반도체장치의 제조방법 및 반도체제조장치 Expired - Fee Related KR100222186B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-351302 1995-12-27
JP7351302A JPH09186116A (ja) 1995-12-27 1995-12-27 半導体装置の製造方法及び半導体製造装置

Publications (2)

Publication Number Publication Date
KR970052721A true KR970052721A (ko) 1997-07-29
KR100222186B1 KR100222186B1 (ko) 1999-10-01

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KR1019960071330A Expired - Fee Related KR100222186B1 (ko) 1995-12-27 1996-12-24 반도체장치의 제조방법 및 반도체제조장치

Country Status (4)

Country Link
US (1) US6098638A (ko)
JP (1) JPH09186116A (ko)
KR (1) KR100222186B1 (ko)
TW (1) TW368696B (ko)

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* Cited by examiner, † Cited by third party
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JP4127926B2 (ja) * 1999-04-08 2008-07-30 株式会社荏原製作所 ポリッシング方法
JP3957924B2 (ja) * 1999-06-28 2007-08-15 株式会社東芝 Ｃｍｐ研磨方法
JP4123685B2 (ja) * 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
US6638145B2 (en) 2001-08-31 2003-10-28 Koninklijke Philips Electronics N.V. Constant pH polish and scrub
US6585567B1 (en) 2001-08-31 2003-07-01 Koninklijke Philips Electronics N.V. Short CMP polish method
KR100499403B1 (ko) * 2002-03-06 2005-07-07 주식회사 하이닉스반도체 슬러리 제조 방법
KR20040036754A (ko) * 2002-10-24 2004-05-03 주식회사 하이닉스반도체 화학적기계연마 공정에서의 세정 단계
JP2004273961A (ja) * 2003-03-12 2004-09-30 Ebara Corp 金属配線形成基板の洗浄処理装置
KR100644073B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 실리콘 질화막의 세정 방법
US7297632B2 (en) * 2005-03-17 2007-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Scratch reduction for chemical mechanical polishing
WO2007016498A2 (en) * 2005-08-02 2007-02-08 Raytech Composites, Inc. Nonwoven polishing pads for chemical mechanical polishing
JP5273524B2 (ja) * 2008-04-28 2013-08-28 株式会社ニコン 研磨装置および研磨方法
JP5819589B2 (ja) * 2010-03-10 2015-11-24 株式会社フジミインコーポレーテッド 研磨用組成物を用いた方法
JP5819076B2 (ja) * 2010-03-10 2015-11-18 株式会社フジミインコーポレーテッド 研磨用組成物
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Also Published As

Publication number Publication date
TW368696B (en) 1999-09-01
US6098638A (en) 2000-08-08
KR100222186B1 (ko) 1999-10-01
JPH09186116A (ja) 1997-07-15

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