KR970077128A - 이온 플레이팅용 이온 혼합 쏘스 장치 - Google Patents

이온 플레이팅용 이온 혼합 쏘스 장치 Download PDF

Info

Publication number
KR970077128A
KR970077128A KR1019960015196A KR19960015196A KR970077128A KR 970077128 A KR970077128 A KR 970077128A KR 1019960015196 A KR1019960015196 A KR 1019960015196A KR 19960015196 A KR19960015196 A KR 19960015196A KR 970077128 A KR970077128 A KR 970077128A
Authority
KR
South Korea
Prior art keywords
ion
plasma
target
beam source
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019960015196A
Other languages
English (en)
Other versions
KR100188270B1 (ko
Inventor
김종국
정태산
유종백
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015196A priority Critical patent/KR100188270B1/ko
Publication of KR970077128A publication Critical patent/KR970077128A/ko
Application granted granted Critical
Publication of KR100188270B1 publication Critical patent/KR100188270B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 이온 플레이팅용 이온 혼합 쏘스 장치에 관한 것으로, 특히 이온 플레이팅의 내마모 코팅에 있어 박막(Thin-film)의 밀착력 및 조도를 향상시키기 위해 금속 증발원과 플라즈마 빔원을 공동으로 혼합 사용되게 한 이온 플레이팅용 이온 혼합 쏘스 장치에 관한 것으로, 원형 또는 사각의 단면을 가지고 음극으로 인가된 타켓, 상기 타켓과 절연되어 자장의 통로 및 전장을 조절하는 보조 양극, 지지구, 상기 지지구에 포함된 마그네트로 구성되어진 아크가 발생될 수 있는 아크 증발원과, 상기 아크 증발원과 동시적 사용이 가능하도록 챔버내에 장착되어 플라즈마를 발생시키는 플라즈마 빔 쏘스를 일체로 구비하여 양질의 박막 형성이 가능한 것이다.

Description

이온 플레이팅용 이온 혼합 쏘스 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한, 전체적인 이온 혼합 쏘스 장치의 구성도.

Claims (2)

  1. 원형 또는 사각의 단면을 가지고 음극으로 인가된 타켓, 상기 타켓과 절연되어 자장의 통로 및 전장을 조절하는 보조 양극, 지지구, 상기 지지구에 포함된 마그네트로 구성되어진 아크가 발생될 수 있는 아크 증발원과, 상기 아크 증발원과 동시적 사용이 가능하도록 챔버내에 장착되어 플라즈마를 발생시키는 플라즈마 빔 쏘스를 일체로 구비하여 박막의 형성이 가능케 됨을 특징으로 하는 이온 플레이팅용 이온 혼합 쏘스 장치.
  2. 제1항에 있어서, 상기 플라즈마 빔 쏘스는 기체 분배구가 포함된 양극과, 상기 양극의 주위를 둘러싼 절연체와, 상기 절연체 주위를 둘러싸며 자장의 통로가 되는 요크와, 상기 요크에 감싸여 자장을 발산하는 전자석으로 이루어짐을 특징으로 하는 이온 플레이팅용 이온 혼합 쏘스 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960015196A 1996-05-09 1996-05-09 이온 플레이팅용 이온 혼합 쏘스 장치 Expired - Fee Related KR100188270B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960015196A KR100188270B1 (ko) 1996-05-09 1996-05-09 이온 플레이팅용 이온 혼합 쏘스 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015196A KR100188270B1 (ko) 1996-05-09 1996-05-09 이온 플레이팅용 이온 혼합 쏘스 장치

Publications (2)

Publication Number Publication Date
KR970077128A true KR970077128A (ko) 1997-12-12
KR100188270B1 KR100188270B1 (ko) 1999-06-01

Family

ID=19458156

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015196A Expired - Fee Related KR100188270B1 (ko) 1996-05-09 1996-05-09 이온 플레이팅용 이온 혼합 쏘스 장치

Country Status (1)

Country Link
KR (1) KR100188270B1 (ko)

Also Published As

Publication number Publication date
KR100188270B1 (ko) 1999-06-01

Similar Documents

Publication Publication Date Title
RU2168233C2 (ru) Катод для распыления или электродугового испарения (варианты) и устройство для покрытия или ионной имплантации подложек
US6224725B1 (en) Unbalanced magnetron sputtering with auxiliary cathode
US5000834A (en) Facing targets sputtering device
CA1321772C (en) Apparatus for the application of thin layers to a substrate by means of cathode sputtering
US4710283A (en) Cold cathode ion beam source
US20050247885A1 (en) Closed drift ion source
GB2419897A (en) Rectangular filtered vapor plasma source and method of controlling vapor plasma flow
DE69531240D1 (de) Rechteckige vakuumlichtbogenplasmaquelle
KR890013819A (ko) 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온 소스
KR970003434A (ko) 스퍼터링장치
WO2000062327A3 (en) Rectangular cathodic arc source and method of steering an arc spot
EP0447764A3 (en) Cathodic sputtering substrate coating device
DE60135875D1 (de) Gerät zur Verdampfung von Werkstoffen zur Beschichtung von Gegenständen
US20060249376A1 (en) Ion source with multi-piece outer cathode
US4673480A (en) Magnetically enhanced sputter source
CA2438098C (en) Magnetic field for small closed-drift thruster
JP3246800B2 (ja) プラズマ装置
KR970077128A (ko) 이온 플레이팅용 이온 혼합 쏘스 장치
US6242749B1 (en) Ion-beam source with uniform distribution of ion-current density on the surface of an object being treated
JPH01168862A (ja) 透明支持体上に薄層を付着するための、特にガラスシートを製造するための装置及び方法
US5130607A (en) Cold-cathode, ion-generating and ion-accelerating universal device
TWI823457B (zh) 濺鍍裝置
WO2000070928A8 (fr) Procede de formation et d'acceleration de plasma et accelerateur de plasma utilisant le courant d'electrons en circuit ferme
JPS55141721A (en) Sputtering apparatus for magnetic body
RU1780127C (ru) Способ подготовки образца дл электронной микроскопии

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20090112

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20100112

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20100112

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000