KR970077250A - 플라즈마 형성 장치 및 이를 이용한 반도체 장치의 에칭 방법 - Google Patents

플라즈마 형성 장치 및 이를 이용한 반도체 장치의 에칭 방법 Download PDF

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KR970077250A
KR970077250A KR1019960018523A KR19960018523A KR970077250A KR 970077250 A KR970077250 A KR 970077250A KR 1019960018523 A KR1019960018523 A KR 1019960018523A KR 19960018523 A KR19960018523 A KR 19960018523A KR 970077250 A KR970077250 A KR 970077250A
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high frequency
etching chamber
plasma
coil
etching
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KR100230360B1 (ko
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지경구
정찬욱
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김광호
삼성전자 주식회사
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

본 발명은 플라즈마 형성 방법 및 이를 이용한 반도체 장칭의 에칭 방법에 관한 것으로, 본 발명에서는 반도체 장치를 제조하기 위한 에칭 공정에서 에칭 챔버 주위에 형성된 코일을 통하여 고주파 발생기로부터 발생된 고주파와, 직류 공급 수단에 의해 공급되는 직류 전류를 공급하는 플라즈마 형성 장치를 사용한다. 본 발명에 의하면, 반도체 제조 설비 및 반도체 장치의 오염원을 제거하고, 설비의 효율을 극대화할 수 있다.

Description

플라즈마 형성 장치 및 이를 이용한 반도체 장치의 에칭 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 바람직한 실시예에 따른 플라즈마 형성 장치의 구성을 개략적으로 나타낸 것이다.

Claims (6)

  1. 고주파를 발생시키는 고주파 발생기와, 에칭 장치의 에칭 챔버 주위에 감겨서 상기 고주파 발생기로부터 발생된 고주파에 의해 상기 에칭 챔버 내에 플라즈마를 발생시키는 코일과, 상기 고주파 발생기와 상기 코일 사이에 연결되어 임피던스를 정합시키는 매칭 네트워크(matching network)와, 상기 코일에 직류 전류를 공급하는 직류 공급 수단을 포함하는 것을 특징으로 하는 플라즈마 형성 장치.
  2. 제1항에 있어서, 상기 직류 공급 수단은 직류 전압 공급기, 인덕터 및 커패시터를 포함하는 것을 특징으로 하는 플라즈마 형성 장치.
  3. 제1항에 있어서, 상기 직류 공급 수단은 상기 코일에 직접 연결된 것을 특징으로 하는 플라즈마 형성 장치.
  4. 제1항에 있어서, 상기 직류 공급 수단은 외부의 별도의 코일을 통하여 상기 코일에 연결된 것을 특징으로 하는 플라즈마 형성 장치.
  5. 제1항에 있어서, 상기 에칭 장치의 에칭 챔버는 ICP(Inductively Coupled Plasma)형 에칭 챔버, TCP(Transformer Coupled Plasma)형 에칭 챔버 또는 헬리콘파 플라즈마(helicon wave plasma)에칭 챔버인 것을 특징으로 하는 플라즈마 형성 장치.
  6. 반도체 제조를 위하여 에칭 챔버내에서 플라즈마에 의해 반도체 장치를 에칭하는 방법에 있어서, 상기 에칭 챔버에는 상기 에칭 챔버 주위에 형성된 코일을 통하여 고주파 발생기로부터 발생된 고주파와, 직류 공급수단에 의해 공급되는 직류 전류가 공급되는 것을 특징으로 하는 반도체 장치의 에칭 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960018523A 1996-05-29 1996-05-29 유도 결합형 플라즈마 형성 장치 Expired - Fee Related KR100230360B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960018523A KR100230360B1 (ko) 1996-05-29 1996-05-29 유도 결합형 플라즈마 형성 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960018523A KR100230360B1 (ko) 1996-05-29 1996-05-29 유도 결합형 플라즈마 형성 장치

Publications (2)

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KR970077250A true KR970077250A (ko) 1997-12-12
KR100230360B1 KR100230360B1 (ko) 1999-11-15

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