KR970077250A - 플라즈마 형성 장치 및 이를 이용한 반도체 장치의 에칭 방법 - Google Patents
플라즈마 형성 장치 및 이를 이용한 반도체 장치의 에칭 방법 Download PDFInfo
- Publication number
- KR970077250A KR970077250A KR1019960018523A KR19960018523A KR970077250A KR 970077250 A KR970077250 A KR 970077250A KR 1019960018523 A KR1019960018523 A KR 1019960018523A KR 19960018523 A KR19960018523 A KR 19960018523A KR 970077250 A KR970077250 A KR 970077250A
- Authority
- KR
- South Korea
- Prior art keywords
- high frequency
- etching chamber
- plasma
- coil
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (6)
- 고주파를 발생시키는 고주파 발생기와, 에칭 장치의 에칭 챔버 주위에 감겨서 상기 고주파 발생기로부터 발생된 고주파에 의해 상기 에칭 챔버 내에 플라즈마를 발생시키는 코일과, 상기 고주파 발생기와 상기 코일 사이에 연결되어 임피던스를 정합시키는 매칭 네트워크(matching network)와, 상기 코일에 직류 전류를 공급하는 직류 공급 수단을 포함하는 것을 특징으로 하는 플라즈마 형성 장치.
- 제1항에 있어서, 상기 직류 공급 수단은 직류 전압 공급기, 인덕터 및 커패시터를 포함하는 것을 특징으로 하는 플라즈마 형성 장치.
- 제1항에 있어서, 상기 직류 공급 수단은 상기 코일에 직접 연결된 것을 특징으로 하는 플라즈마 형성 장치.
- 제1항에 있어서, 상기 직류 공급 수단은 외부의 별도의 코일을 통하여 상기 코일에 연결된 것을 특징으로 하는 플라즈마 형성 장치.
- 제1항에 있어서, 상기 에칭 장치의 에칭 챔버는 ICP(Inductively Coupled Plasma)형 에칭 챔버, TCP(Transformer Coupled Plasma)형 에칭 챔버 또는 헬리콘파 플라즈마(helicon wave plasma)에칭 챔버인 것을 특징으로 하는 플라즈마 형성 장치.
- 반도체 제조를 위하여 에칭 챔버내에서 플라즈마에 의해 반도체 장치를 에칭하는 방법에 있어서, 상기 에칭 챔버에는 상기 에칭 챔버 주위에 형성된 코일을 통하여 고주파 발생기로부터 발생된 고주파와, 직류 공급수단에 의해 공급되는 직류 전류가 공급되는 것을 특징으로 하는 반도체 장치의 에칭 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960018523A KR100230360B1 (ko) | 1996-05-29 | 1996-05-29 | 유도 결합형 플라즈마 형성 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960018523A KR100230360B1 (ko) | 1996-05-29 | 1996-05-29 | 유도 결합형 플라즈마 형성 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970077250A true KR970077250A (ko) | 1997-12-12 |
| KR100230360B1 KR100230360B1 (ko) | 1999-11-15 |
Family
ID=19460083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960018523A Expired - Fee Related KR100230360B1 (ko) | 1996-05-29 | 1996-05-29 | 유도 결합형 플라즈마 형성 장치 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100230360B1 (ko) |
-
1996
- 1996-05-29 KR KR1019960018523A patent/KR100230360B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100230360B1 (ko) | 1999-11-15 |
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