KR970077335A - Bi층형상구조 강유전체 박막의 제조방법 - Google Patents

Bi층형상구조 강유전체 박막의 제조방법 Download PDF

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KR970077335A
KR970077335A KR1019970018601A KR19970018601A KR970077335A KR 970077335 A KR970077335 A KR 970077335A KR 1019970018601 A KR1019970018601 A KR 1019970018601A KR 19970018601 A KR19970018601 A KR 19970018601A KR 970077335 A KR970077335 A KR 970077335A
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thin film
layer structure
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유코 호치도
히데키미 가도쿠라
마사미치 마츠모토
고지 아리타
마사미치 아즈마
다츠오 오츠키
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모리 가즈히로
미츠시타덴시고교 가부시키가이샤
호치도 요코
가부시키가이샤 고준도가가쿠 겐큐쇼
래리 디. 맥밀런
시메트릭스 코포레이션
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Abstract

본 발명은 Bi를 함유하는 유기화합물과, 금속폴리알콕사이드화합물을 함유하는 혼합조성물을 원료로 사용하고, CVD 등의 분자퇴적법 및 스핀코팅도포-소결법중에서 선택되는 적어도 하나의 방법에 의해 기재 표면에 Bi층 형상 구조 강유전체의 박막을 재현성좋게 형성하는 방법에 관한 것으로, 본 발명은 성막실(5)내가 감압상태인 CVD장치의 수용조(1a)에 Sr[Ta(OC2H5)6]2를, 수용조(1b)에 Bi(OC(CH3)2C2H5)3를 봉입하고, Sr[Ta(OC2H5)6]2용 제1공급계(1a, 16a)를 150℃로 유지하고, Bi(OC(CH3)2C2H5)3용 제2공급계(1b, 16b)를 80℃로 유지하고, 캐리어가스인 N2를 제1공급계 및 제2공급계에 흐르게 함으로써, Sr[Ta(OC2H5)6]2및 Bi(OC(CH3)2C2H5)3의 증기를 성막실(5)내에 도입한다. 이와 동시에 성막실(5)내에 산소가스를 도입하고, 가열된 Si웨이퍼(8)상에서 상기 2종의 증기가스를 열분해시킨다.

Description

Bi층형상구조 강유전체 박막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 Bi층형상구조 강유전체 박막의 제조방법에 사용되는 CVD장치의 제1구체예의 개략 구성을 모식적으로 도시한 도면.

Claims (24)

  1. 기재의 표면에 Bi(비스무트)층 형상구조 강유전체 박막을 형성하는 방법에 있어서, Bi를 함유하는 유기 화합물과, 금속폴리알콕사이드 화합물을 함유하는 혼합조성물을 원료로 사용하고, 퇴적법에 의해 기재의 표면에 Bi층형상구조 강유전체의 박막을 형성하는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  2. 제1항에 있어서, 퇴적법이 분자퇴적법 및 스핀코팅도포-소결법중에서 선택되는 적어도 하나의 방법인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  3. 제1항에 있어서, 형성되는 Bi층형상구조 강유전체 박막이 하기 일반식(화1)으로 표시되는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
    (Bi2O2)2-(A1)m1(A2)m2…(An)mn(B1)s1(B2)s2…(Bt)stO3p+1)2-(1)
    (단, A1, A2, …, An은 양이온이 되는 원소로서 Ba, Bi, Sr, Pb, La, Ca중에서 선택되는 하나의 단체 또는 혼합체, B1, B2, …, Bt는 양이온이 되는 원소로서, Ti, Zr, Ta, Mo, W, Nb중에서 선택되는 적어도 하나의 단체 또는 혼합체, p는 1∼5의 정수, m1, m2, …, mn은 m1+m2+…mn=p-1을 만족시키는 마이너스가 아닌 실수, s1, s2, …st는 s1+s2…St를 만족시키는 마이너스가 아닌 실수이다.)
  4. 제1항에 있어서, 금속폴리알콕사이드 화합물이 하기 일반식(화2)으로 표시되는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
    Ai(Bj((ORj1)(ORj2) …(ORj6)))(Bk((ORk1)(ORk2) …(ORk6))) (2)
    (단, Ai는 양이온이 되는 원소로서 Ba, Bi, Sr, Pb, La, Ca중에서 선택되는 적어도 하나의 단체 또는 혼합체, Bi및 Bk는 동일 또는 다른 원소이고 양이온이 되는 원소로서 Ti, Zr, Ta, Mo, W, Nb중에서 선택되는 적어도 하나의 단체 또는 혼합체이다. Rj1, Rj2, …Rj6, Rk1, Rk2, …Rk6은 탄소수 1∼12의 알킬기이다.)
  5. 제2항에 있어서, 분자퇴적법이 화학기상성장법(CVD법)인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  6. 제1항에 있어서, 원료조성물의 혼합비율이 Bi를 함유하는 유기화합물 1∼99중량%, 금속폴리알콕사이드화합물 99∼1중량%의 범위인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  7. 제4항에 있어서, 일반식(화2)으로 표시되는 금속알콕사이드화합물의 Rj1, Rj2, …Rj6, Rk1, Rk2, …Rk6의 각각이 에틸기 및 이소프로필기중에서 선택되는 적어도 하나의 기인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  8. 제4항에 있어서, 일반식(화2)으로 표시되는 금속알콕사이드화합물의 Ai가 Sr 및 Ba 중에서 선택되는 적어도 하나의 원소이고, Bj가 Nb 및 Ta 중에서 선택되는 적어도 하나의 원소이고, Bk가 Nb 및 Ta 중에서 선택되는 적어도 하나의 원소인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  9. 제1항에 있어서, Bi를 함유하는 유기화합물이 Bi터셜리부톡사이드 및 Bi터셜리펜톡사이드 중에서 선택되는 적어도 하나의 화합물인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  10. 제5항에 있어서, 화학기상성장법(CVD법)에 의한 방법이 Bi를 함유하는 유기화합물과 상기 일반식(화2)로 표시되는 금속알콕사이드화합물을 유기용매에 용해하여 얻어진 용액을 기화시키고, 이 기화에 의해 얻어진 가스를 기판상에 공급하여 분자퇴적하는 방법인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  11. 제5항에 있어서, 화학기상성장법(CVD법)이 원료가스의 열분해 분위기에서 자외선을 조사하는 광 CVD법인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  12. 제5항에 있어서, 상기 화학기상성장법(CVD법)이 원료가스의 열분해시에 원료가스를 플라즈마 여기시키는 플라즈마 CVD법인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  13. 제1항에 있어서, 스핀코팅도포-소결법이 Bi를 함유하는 유기화합물과 상기 일반식(화2)으로 표시되는 금속알콕사이드화합물을 유기용매에 용해하여 얻어진 용액의 도막을 기판상에 형성한 후, 상기 도막을 건조하고, 계속해서 산소분위기하에서의 소결을 행하는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  14. 제10항 또는 제13항에 있어서, 유기용매가 테트라히드로푸란을 함유하는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  15. 제1항에 있어서, 원료조성물로서 Pb를 함유하는 유기화합물을 첨가하는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  16. 제15항에 있어서, Pb를 함유하는 유기화합물의 첨가량이 Bi를 함유하는 유기 유기화합물과 금속폴리알콕사이드화합물을 함유하는 혼합조성물을 100중량부로 했을 때, 10ppm∼200중량부의 범위인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  17. 제15항에 있어서, 형성되는 Bi층형상구조 강유전체 박막이 하기 일반식(화3)으로 표시되는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
    (SraBabPbc)(NbxTay)Bi2O9(3)
    (단, 식중 a+b+c=1, 0c1, x+y=2)
  18. 제15항에 있어서, Pb를 함유하는 유기화합물과 함께 원료조성물로서 하기 일반식(화4)으로 표시되는 알콕사이드화합물을 사용하고, 화학기상성장법(CVD법)에 의해 기판상에 Bi층형상구조 강유전체의 박막을 성장시키는 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
    (SrdBae)[(NbpTaq)(OR)6]2(4)
    (단, d+e=1, p+q=1, R은 C2H5또는 CH(CH3)2)
  19. 제15항에 있어서, Pb를 함유하는 유기화합물이 Pb터셜리부톡사이드 및 Pb옥소터셜리부톡사이드 중에서 선택되는 적어도 하나의 화합물인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  20. 제15항에 있어서, Bi을 함유하는 유기화합물이 Bi터셜리부톡사이드 및 Bi터셜리펜톡사이드 중에서 선택되는 적어도 하나의 화합물인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  21. 제18항에 있어서, 화학기상성장법(CVD법)이 원료가스의 열분해 분위기에서 자외선을 조사하는 광 CVD법인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  22. 제18항에 있어서, 화학기상성장법(CVD법)이 원료가스의 열분해시에 원료가스를 플라즈마여기시키는 플라즈마 CVD법인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  23. 제1항에 있어서, 기재가 반도체인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
  24. 제1항에 있어서, Bi층형상구조 강유전체 박막의 두께가 1nm∼10㎛의 범위인 것을 특징으로 하는 Bi층형상구조 강유전체 박막의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970018601A 1996-05-14 1997-05-13 Bi층형상구조강유전체박막의제조방법 Expired - Fee Related KR100295870B1 (ko)

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JP11935096A JP3503790B2 (ja) 1996-05-14 1996-05-14 Ｂｉ層状構造強誘電体薄膜の製造方法
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JP12201496A JP3503791B2 (ja) 1996-05-16 1996-05-16 Ｂｉ層状構造強誘電体薄膜の製造方法
JP96-122014 1996-05-16

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