KR970077351A - 금속배선 형성방법 - Google Patents

금속배선 형성방법 Download PDF

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Publication number
KR970077351A
KR970077351A KR1019960018909A KR19960018909A KR970077351A KR 970077351 A KR970077351 A KR 970077351A KR 1019960018909 A KR1019960018909 A KR 1019960018909A KR 19960018909 A KR19960018909 A KR 19960018909A KR 970077351 A KR970077351 A KR 970077351A
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South Korea
Prior art keywords
interlayer insulating
insulating film
impurities
metal wiring
forming
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KR1019960018909A
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English (en)
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KR0171171B1 (ko
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안희원
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문정환
Lg 반도체 주식회사
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Priority to KR1019960018909A priority Critical patent/KR0171171B1/ko
Publication of KR970077351A publication Critical patent/KR970077351A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 금속배선 형성방법에 관한 것으로서, 기판 상에 불순물이 고농도로 도핑된 층간절연막을 증착하고 고온으로 리플로우함과 동시에 이 층간절연막의 표면 내부에 도핑된 불순물을 표면 상으로 석출시키는 공정과, 상기 층간절연막의 표면에 고온 다습한 공기를 분사하여 표면 상에 석출된 불순물과 반응시켜 부식용액을 생성하는 공정과, 상기 기판을 회전시키면서 층간절연막의 표면에 탈이온수를 분사하여 부식용액을 제거하고 건조하는 공정과, 상기 층간절연막의 소정 부분을 제거하여 상기 기판을 노출시키는 비아홀을 형성하는 단계와, 상기 비아홀의 내부를 포함하는 상기 층간절연막 상에 금속배선을 형성하는 공정을 구비한다. 따라서, 불순물을 고농도로 도핑시켜 층간절연막의 표면을 평탄하게 하고 리플로우시 층간절연막의 표면 상에 석출되는 불순물에 의해 생성되는 부식용액을 제거하므로 층간절연막 상에 형성되는 금속배선이 단선되는 것을 방지할 수 있다.

Description

금속배선 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 내지 제2c도는 본 발명에 따른 금속배선 형성방법을 나타내는 공정도.

Claims (2)

  1. 기판 상에 불순물이 고농도로 도핑된 층간절연막을 증착하고 고온으로 리플로우함과 동시에 이 층간절연막의 표면 내부에 도핑된 불순물을 표면 상으로 석출시키는 공정과, 상기 층간절연막의 표면에 고온 다습한 공기를 분사하여 표면 상에 석출된 불순물과 반응시켜 부식용액을 생성하는 공정과, 상기 기판을 회전시키면서 층간절연막의 표면에 탈이온수를 분사하여 부식용액을 제거하고 건조하는 공정과, 상기 층간절연막의 소정 부분을 제거하여 상기 기판을 노출시키는 비아홀을 형성하는 단계와, 상기 비아홀의 내부를 포함하는 상기 층간절연막 상에 금속배선을 형성하는 공정을 구비하는 금속배선 형성방법.
  2. 제1항에 있어서, 상기 층간절연막을 PSG(Phospho Silicate Glass) 또는 BPSG(Pnro Phospho Silicate Glass)으로 형성하는 금속배선 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960018909A 1996-05-31 1996-05-31 금속배선 형성방법 Expired - Fee Related KR0171171B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960018909A KR0171171B1 (ko) 1996-05-31 1996-05-31 금속배선 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960018909A KR0171171B1 (ko) 1996-05-31 1996-05-31 금속배선 형성방법

Publications (2)

Publication Number Publication Date
KR970077351A true KR970077351A (ko) 1997-12-12
KR0171171B1 KR0171171B1 (ko) 1999-03-30

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ID=19460290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960018909A Expired - Fee Related KR0171171B1 (ko) 1996-05-31 1996-05-31 금속배선 형성방법

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KR (1) KR0171171B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730174B1 (ko) * 2005-12-06 2007-06-19 삼성에스디아이 주식회사 금속층 증착방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102305313B1 (ko) 2019-10-07 2021-09-27 주식회사 케이엠더블유 쿼드 편파 안테나 모듈 어레이를 이용하여 빔들의 공간-편파 분리를 구현하는 안테나 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730174B1 (ko) * 2005-12-06 2007-06-19 삼성에스디아이 주식회사 금속층 증착방법

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