KR970077702A - 광기전력 소자의 제조 방법 - Google Patents

광기전력 소자의 제조 방법 Download PDF

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Publication number
KR970077702A
KR970077702A KR1019970019163A KR19970019163A KR970077702A KR 970077702 A KR970077702 A KR 970077702A KR 1019970019163 A KR1019970019163 A KR 1019970019163A KR 19970019163 A KR19970019163 A KR 19970019163A KR 970077702 A KR970077702 A KR 970077702A
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photovoltaic device
electrolyte solution
layer
substrate
electric field
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KR100334595B1 (ko
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히로후미 이찌노세
아끼오 하세베
쯔또무 무라까미
사또시 신꾸라
유끼에 우에노
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미따라이 후지오
캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

본 발명은 알루미늄 또는 알루미늄 화합물을 포함하는 금속층과 투명한 도전성 층을 포함하는 저부 전극층, 광전 변환 반도체 층, 및 투명 전극층이 기판 위에 상기 순서대로 적층되어 있는 광기전력 소자를 제공하는 단계와, 상기 광기전력 소자를 전해질 용액에 함침시켜서 전기장의 작용에 의하여 상기 광기전력 소자내에 존재하는 단락 전류 경로 결함을 패시베이트하는 단계를 포함하며, 상기 전해질 용액은 염소 이온을 0.03mol/ℓ 이하의 양으로 함유하는 것인 광기전력 소자의 제조방법에 관한 것이다.

Description

광기전력 소자의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1(a)는 본 발명의 광기전력 소자를 예시하는 모식적 횡단면도, 제1(b)도는 제1(a)에 도시된 광기전력 소자의 광 입사면을 예시하는 모식적 평면도

Claims (12)

  1. (a-ⅰ) 알루미늄 또는 알루미늄 화합물을 포함하는 금속층과 (a-ⅱ) 투명한 도전성 층을 포함하는 (a) 저부 전극층, (b) 광전 변환 반도체 층, 및 (c) 투명 전극층이 기판 위에 상기 순서대로 적층되어 있는 광기전력 소자를 제공하는 단계, 및 상기 광기전력 소자를 전해질 용액에 함침시켜서 전기장의 작용에 의하여 상기 광기전력 소자 내에 존재하는 단락 전류 경로 결함을 패시베이트(passivate)하는 단계를 포함하며, 상기 전해질 용액은 염소 이온을 0.03mol/ℓ 이하의 양으로 함유하는 것인 광기전력 소자의 제조 방법.
  2. 제1항에 있어서, 전해질 용액이 금속층(a-ⅰ)과 기판 또는 투명한 도전성 층(a-ⅱ) 사이의 계면에서 박리의 발생을 방지할 수 있는 보호성 이온을 함유하는 방법.
  3. 제2항에 있어서, 보호성 이온이 술페이트, 니트레이트, 크로메이트, 아세테이트, 벤조에이트 및 옥살레이트로 이루어진 군에서 선택되는 적어도 1종의 화합물을 기재로 하는 이온인 방법.
  4. 제1항에 있어서, 전기장이 광기전력 소자에 바이어스 전력을 가함으로써 발생시킨 전기장인 방법.
  5. 제1항에 있어서, 전기장이 기전력, 특히 광기전력 소자에 빛을 조사함으로써 발생시킨 광기전력 소자의 전압 특성에 의해 발생하는 전기장인 방법.
  6. 제4항에 있어서, 바이어스 전력이 광기전력 소자의 전방 방향으로 가해지는 방법.
  7. 제1항에 있어서, 기판이 금속, 유리, 세라믹, 및 수지로 이루어진 군에서 선택되는 재료로 이루어지는 방법.
  8. 제1항에 있어서, 기판이 긴 기판으로 이루어지고, 그 위에 광기전력 소자가 제공된 긴 기판을 연속적으로 전해질 용액에 통과시키는 방법.
  9. 제1항에 있어서, 알루미늄 화합물이 규소를 함유하는 방법.
  10. 제1항에 있어서, 투명한 도전성 층 (a-ⅱ) 및 (또는) 투명 전극층 (c)가 금속 산화물로 이루어지는 방법.
  11. 제1항에 있어서, 광전 변환 반도체 층 (b)가 비(非)단일 결정 반도체 재료로 이루어지는 방법.
  12. 제1항에 있어서, 전해질 용액을 사용한 처리는 금속층 (a-ⅰ)과 기판 또는 투명한 도전성 층(a-ⅱ)사이의 계면에서 층 박리가 시작되기 전에 완료되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970019163A 1996-05-17 1997-05-17 광기전력소자의제조방법 Expired - Fee Related KR100334595B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14654296 1996-05-17
JP96-146542 1996-05-17

Publications (2)

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KR970077702A true KR970077702A (ko) 1997-12-12
KR100334595B1 KR100334595B1 (ko) 2002-10-04

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US (1) US5859397A (ko)
KR (1) KR100334595B1 (ko)
CN (1) CN1093985C (ko)

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US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
DE10240921B4 (de) * 2002-09-02 2007-12-13 Qimonda Ag Verfahren und Anordnung zum selektiven Metallisieren von 3-D-Strukturen
JP2006508253A (ja) * 2002-11-27 2006-03-09 ザ・ユニバーシティ・オブ・トレド 液状電解物を有した集積型光電気化学とそのシステム
US20040217014A1 (en) * 2003-05-01 2004-11-04 Ovshinsky Stanford R. Solar powered electrolysis of brackish water
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
US20050092618A1 (en) * 2003-10-30 2005-05-05 Srinivasan Venkatesan Process and apparatus for removing chloride and sodium ions from an aqueous sodium chloride solution
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US8563967B2 (en) * 2007-07-11 2013-10-22 Koninklijke Philips N.V. Organic functional device and manufacturing method therefor
WO2009073501A2 (en) * 2007-11-30 2009-06-11 University Of Toledo System for diagnosis and treatment of photovoltaic and other semiconductor devices
US20090162970A1 (en) * 2007-12-20 2009-06-25 Yang Michael X Material modification in solar cell fabrication with ion doping
US8076175B2 (en) * 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
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CN1170964A (zh) 1998-01-21
CN1093985C (zh) 2002-11-06
KR100334595B1 (ko) 2002-10-04
US5859397A (en) 1999-01-12
MX9703578A (es) 1998-06-28

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