KR970077704A - 마이크로 렌즈 패턴용 마스크 - Google Patents

마이크로 렌즈 패턴용 마스크 Download PDF

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Publication number
KR970077704A
KR970077704A KR1019960016465A KR19960016465A KR970077704A KR 970077704 A KR970077704 A KR 970077704A KR 1019960016465 A KR1019960016465 A KR 1019960016465A KR 19960016465 A KR19960016465 A KR 19960016465A KR 970077704 A KR970077704 A KR 970077704A
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KR
South Korea
Prior art keywords
microlens
mask
region
main
transparent substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1019960016465A
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English (en)
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KR100209752B1 (ko
Inventor
백의현
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문정환
Lg 반도체주식회사
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Application filed by 문정환, Lg 반도체주식회사 filed Critical 문정환
Priority to KR1019960016465A priority Critical patent/KR100209752B1/ko
Priority to DE19648063A priority patent/DE19648063B4/de
Priority to US08/783,901 priority patent/US5835274A/en
Priority to JP13580297A priority patent/JP3227561B2/ja
Publication of KR970077704A publication Critical patent/KR970077704A/ko
Application granted granted Critical
Publication of KR100209752B1 publication Critical patent/KR100209752B1/ko
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Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 반도체 소자에 관한 것으로, 특히 곡률 반경이 큰 마이크로 렌즈를 제조하기 위한 마이크로 렌즈 패턴용 마스크와 이를 이용한 마이크로 렌즈 제조방법에 관한 것이다.
이와 같은 마이크로 렌즈 패턴용 마스크는 투명기판, 상기 투명기판상에 소정영역에 형성되는 메인 차광영역, 그리고 상기 메인 차광층 주위에 형성되어 메인 차광층에서 멀어질수록 큰 빛의 진폭을 갖도록 형성되는 보조 차광영역을 포함하여 구성된 것으로 이를 이용하여 마이크로 렌즈를 제조하면 마이크로 렌즈의 곡률 반경이 커진다.

Description

마이크로 렌즈 패턴용 마스크
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제9도는 본 발명 제1실시예에 따른 마이크로 렌즈 패턴용 마스크의 투광 특성도.

Claims (2)

  1. 투명기판; 상기 투명기판상의 소정영역에 형성되는 메인 차광영역; 그리고, 상기 메인 차광층 주변 또는 일부에 형성되어 메인 차광층에서 멀어질수록 큰 빛의 진폭을 갖도록 형성되는 보조 차광영역을 포함하여 구성됨을 특징으로 하는 마이크로 렌즈 패턴용 마스크.
  2. 제1항에 있어서, 상기 보조 차광영역을 투광영역으로 하고, 메인 차광영역으로부터 멀어질수록 상기 보조 차광영역을 통과하는 빛의 세기가 더 적게 함을 특징으로 하는 마이크로 렌즈 패턴용 마스크.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960016465A 1996-05-16 1996-05-16 마이크로 렌즈 패턴용 마스크 Expired - Fee Related KR100209752B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019960016465A KR100209752B1 (ko) 1996-05-16 1996-05-16 마이크로 렌즈 패턴용 마스크
DE19648063A DE19648063B4 (de) 1996-05-16 1996-11-20 Verfahren zum Herstellen einer Mikrolinse eines Halbleiterbauteils
US08/783,901 US5835274A (en) 1996-05-16 1997-01-16 Mask for patterning a microlens
JP13580297A JP3227561B2 (ja) 1996-05-16 1997-05-12 マイクロレンズパターン用マスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016465A KR100209752B1 (ko) 1996-05-16 1996-05-16 마이크로 렌즈 패턴용 마스크

Publications (2)

Publication Number Publication Date
KR970077704A true KR970077704A (ko) 1997-12-12
KR100209752B1 KR100209752B1 (ko) 1999-07-15

Family

ID=19458921

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016465A Expired - Fee Related KR100209752B1 (ko) 1996-05-16 1996-05-16 마이크로 렌즈 패턴용 마스크

Country Status (4)

Country Link
US (1) US5835274A (ko)
JP (1) JP3227561B2 (ko)
KR (1) KR100209752B1 (ko)
DE (1) DE19648063B4 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100776168B1 (ko) * 2006-08-03 2007-11-12 동부일렉트로닉스 주식회사 Ｃｍｏｓ 이미지 센서의 제조에 이용되는 마스크

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US20020045105A1 (en) * 2000-07-05 2002-04-18 Brown David R. High quality lithographic processing
US20030207212A1 (en) * 2002-05-02 2003-11-06 Law Benjamin Pain-Fong Micro-optics device and method for fabricating
US20060038966A1 (en) * 2004-08-20 2006-02-23 Long Michael D Apodizing filter
JP4447988B2 (ja) * 2004-08-24 2010-04-07 パナソニック株式会社 固体撮像装置、その製造方法およびカメラ
JP4510613B2 (ja) * 2004-12-28 2010-07-28 パナソニック株式会社 固体撮像装置の製造方法
KR101097915B1 (ko) * 2005-02-07 2011-12-23 삼성전자주식회사 레이저 장치 및 이를 이용한 박막트랜지스터의 제조방법
JP4760198B2 (ja) * 2005-08-01 2011-08-31 ソニー株式会社 露光用マスク、露光用マスクの設計方法および露光用マスクの設計プログラム
KR100685906B1 (ko) * 2005-10-11 2007-02-26 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
US7297473B2 (en) * 2005-11-08 2007-11-20 Sharp Laboratories Of America, Inc. Method of forming a microlens array having a high fill factor
KR100731100B1 (ko) 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 제조용 마스크 및 이를 이용한 씨모스이미지 센서의 제조방법
KR100873275B1 (ko) * 2007-03-19 2008-12-11 매그나칩 반도체 유한회사 이미지센서의 제조 방법
US7732244B2 (en) * 2007-12-20 2010-06-08 Visera Technologies Company Limited Method for forming light-transmitting regions
JP4675385B2 (ja) * 2008-01-04 2011-04-20 学校法人立命館 紫外線または紫外線より波長の短い光を用いた材料の加工装置および加工方法
JP5365353B2 (ja) * 2009-06-08 2013-12-11 凸版印刷株式会社 濃度分布マスク
JP5565771B2 (ja) 2010-06-17 2014-08-06 ルネサスエレクトロニクス株式会社 マイクロレンズの製造方法および撮像素子
CN102929097A (zh) * 2012-10-17 2013-02-13 深圳市华星光电技术有限公司 光罩、tft玻璃基板及其制造方法
JP6428120B2 (ja) * 2014-10-01 2018-11-28 凸版印刷株式会社 フォトマスクブランク、それを用いたフォトマスクの製造方法とフォトマスク、それを用いて作製したマイクロレンズ
CN104375315B (zh) * 2014-11-18 2017-06-16 深圳市华星光电技术有限公司 彩膜基板、彩色滤光片、显示面板及显示装置
WO2018100998A1 (ja) * 2016-12-01 2018-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、及び、撮像装置
US20190339422A1 (en) 2018-05-03 2019-11-07 Visera Technologies Company Limited Method for forming micro-lens array and photomask therefor

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Publication number Priority date Publication date Assignee Title
JPS5542371Y2 (ko) * 1972-08-24 1980-10-03
US4157215A (en) * 1978-04-24 1979-06-05 Rca Corporation Photodeposition of CRT screen structures using cermet IC filter
DE3431250C1 (de) * 1984-08-24 1985-09-19 Raster-Union Efha Kohinoor, 8190 Wolfratshausen Kontaktraster zur Kontraststeuerung
FR2590376A1 (fr) * 1985-11-21 1987-05-22 Dumant Jean Marc Procede de masquage et masque utilise
US5016981A (en) * 1987-04-14 1991-05-21 Nippon Sheet Glass Co., Ltd. Mask
US4928008A (en) * 1987-12-11 1990-05-22 The Boeing Company Variable light transmission filter and optical analog position sensor
JPH04252084A (ja) * 1991-01-28 1992-09-08 Eastman Kodak Japan Kk Ｌｅｄレンズアレイの製造方法
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100776168B1 (ko) * 2006-08-03 2007-11-12 동부일렉트로닉스 주식회사 Ｃｍｏｓ 이미지 센서의 제조에 이용되는 마스크

Also Published As

Publication number Publication date
JP3227561B2 (ja) 2001-11-12
JPH1074927A (ja) 1998-03-17
KR100209752B1 (ko) 1999-07-15
DE19648063A1 (de) 1997-11-20
US5835274A (en) 1998-11-10
DE19648063B4 (de) 2004-08-12

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