LU66176A1 - - Google Patents

Info

Publication number
LU66176A1
LU66176A1 LU66176A LU66176DA LU66176A1 LU 66176 A1 LU66176 A1 LU 66176A1 LU 66176 A LU66176 A LU 66176A LU 66176D A LU66176D A LU 66176DA LU 66176 A1 LU66176 A1 LU 66176A1
Authority
LU
Luxembourg
Application number
LU66176A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712148658 external-priority patent/DE2148658C3/de
Application filed filed Critical
Publication of LU66176A1 publication Critical patent/LU66176A1/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/012Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/012Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
LU66176A 1971-09-29 1972-09-27 LU66176A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712148658 DE2148658C3 (de) 1971-09-29 Kleinflächiger Metall-Halbleiterkontakt

Publications (1)

Publication Number Publication Date
LU66176A1 true LU66176A1 (fr) 1973-01-17

Family

ID=5820950

Family Applications (1)

Application Number Title Priority Date Filing Date
LU66176A LU66176A1 (fr) 1971-09-29 1972-09-27

Country Status (8)

Country Link
US (1) US3831068A (fr)
JP (1) JPS565068B2 (fr)
BE (1) BE789498A (fr)
FR (1) FR2154619B1 (fr)
GB (1) GB1364604A (fr)
IT (1) IT967908B (fr)
LU (1) LU66176A1 (fr)
NL (1) NL7213086A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
US4076575A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Integrated fabrication method of forming connectors through insulative layers
JPS559428A (en) * 1978-07-07 1980-01-23 Internatl Rectifier Corp Japan Ltd Method of manufacturing schottky barrier contact rectifier elements and schottky barrier contact rectifier element
JPS5910363U (ja) * 1982-07-12 1984-01-23 ヤンマーディーゼル株式会社 建設機械の油圧配管
GB8728878D0 (en) * 1987-12-10 1988-01-27 Westinghouse Brake & Signal Semiconductor contact arrangement
JPH11214504A (ja) * 1998-01-26 1999-08-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6956274B2 (en) * 2002-01-11 2005-10-18 Analog Devices, Inc. TiW platinum interconnect and method of making the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1110609A (en) * 1964-08-17 1968-04-24 Semiconductors Ltd Improvements in or relating to integrated circuit chips
US3368124A (en) * 1965-12-09 1968-02-06 Rca Corp Semiconductor devices
US3451912A (en) * 1966-07-15 1969-06-24 Ibm Schottky-barrier diode formed by sputter-deposition processes
FR1542642A (fr) * 1966-08-30 1968-10-18 Telefunken Patent Montage semi-conducteur
GB1188082A (en) * 1967-04-05 1970-04-15 Hitachi Ltd Method of making Semiconductor Device and Semiconductor Device made thereby
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
NL6903930A (fr) * 1969-03-14 1970-09-16
GB1337283A (en) * 1969-12-26 1973-11-14 Hitachi Ltd Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS4843582A (fr) 1973-06-23
DE2148658B2 (de) 1977-03-17
BE789498A (fr) 1973-01-15
IT967908B (it) 1974-03-11
DE2148658A1 (de) 1973-04-05
FR2154619A1 (fr) 1973-05-11
GB1364604A (en) 1974-08-21
JPS565068B2 (fr) 1981-02-03
US3831068A (en) 1974-08-20
FR2154619B1 (fr) 1978-01-06
NL7213086A (fr) 1973-04-02

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