LU87988A1 - METHOD FOR PRODUCING A TI-B-N COATING ON A SUBSTRATE BY SPUTTING - Google Patents
METHOD FOR PRODUCING A TI-B-N COATING ON A SUBSTRATE BY SPUTTING Download PDFInfo
- Publication number
- LU87988A1 LU87988A1 LU87988A LU87988A LU87988A1 LU 87988 A1 LU87988 A1 LU 87988A1 LU 87988 A LU87988 A LU 87988A LU 87988 A LU87988 A LU 87988A LU 87988 A1 LU87988 A1 LU 87988A1
- Authority
- LU
- Luxembourg
- Prior art keywords
- substrate
- target
- coating
- producing
- sputting
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 17
- 238000000576 coating method Methods 0.000 title claims description 8
- 239000011248 coating agent Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
Verfahren zur Herstellung einer Ti-BN-Beschichtung auf einem Substrat mittels SputternProcess for producing a Ti-BN coating on a substrate by means of sputtering
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer Beschichtung aus Titan und Bornitrid auf einem metalli-schen oder nicht-metallischen Substrat mittels Sputtern.The invention relates to a method for producing a coating of titanium and boron nitride on a metallic or non-metallic substrate by means of sputtering.
Schichten aus den genannten Materialien zeichnen sich durch hohe Abriebfestigkeit aus und dienen zunehmend als Beschichtung zur Verschleißminderung von Werkzeugen. Nach dem Stand der Technik werden derartige Schichten mittels CVD (Chemical Vapour Deposition), plasma-unterstütztem CVD oder mittels reaktivem Sputtern von TiB2-Targets hergestellt (siehe z.B. Coatings Technology, vol. 41 (1990), Sexten 351-363). Bekannt-geworden ist auch ein ionengestütztes Beschichtungsverfahren mit alternativer Abscheidung von Titan- und Borschichten bei gleichzeitiger oder alternativer Implantation von Stickstoff-ionen. Jedoch ist der zusätzliche Aufwand der Ionenimplanta-tion erheblich.Layers made of the materials mentioned are characterized by high abrasion resistance and are increasingly used as a coating to reduce wear on tools. According to the prior art, such layers are produced by means of CVD (Chemical Vapor Deposition), plasma-assisted CVD or by means of reactive sputtering of TiB2 targets (see e.g. Coatings Technology, vol. 41 (1990), Sexten 351-363). An ion-supported coating process with alternative deposition of titanium and boron layers with simultaneous or alternative implantation of nitrogen ions has also become known. However, the additional effort of ion implantation is considerable.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren an-zugeben, mit dem auf der Basis der Sputtertechnik auf einfache Weise harte Schichten vom Ti-BN-Typ hergestellt werden können.The invention is based on the object of specifying a method with which hard layers of the Ti-BN type can be produced in a simple manner based on the sputtering technique.
Diese Aufgabe wird erfindungsgemäß dadurch gelost, daß von mindestens einem Ti-Target und von mindestens einem BN-Target in einer Ar/N2-Atmosphäre auf das Substrat gleichzeitig gesput-tert wird.This object is achieved in that at least one Ti target and at least one BN target are sputtered onto the substrate in an Ar / N2 atmosphere.
Vorzugsweise liegen ein Ti-Target und ein BN-Target nebenein-ander in einer Targetebene während das Substrat in einer dazu parallelen Ebene diesen gegenüberliegt.A Ti target and a BN target preferably lie next to one another in a target plane, while the substrate lies opposite them in a plane parallel to them.
Es ist auch môglich, mehrere Targets der beiden Arten in einer gemeinsamen Targetebene abwechselnd nebeneinander anzuordnen und dieser Anordnung das Substrat in einer dazu parallelen Ebene gegenüberzulegen.It is also possible to arrange several targets of the two types alternately next to one another in a common target plane and to place the substrate in a plane parallel to this arrangement.
In an sich bekannter Weise kann das Substrat auf einem Dreh-teller angeordnet werden, um eine gleichmäßigere Zusammenset- zung der Schicht zu gewährleisten. <In a manner known per se, the substrate can be arranged on a turntable in order to ensure a more uniform composition of the layer. <
Vorzugsweise betrâgt der Partialdruck von N2 zwischen 10'5 und 10"4mbar und der des Argon zwischen 10"3 und 10'2mbar.The partial pressure of N2 is preferably between 10'5 and 10 "4mbar and that of argon is between 10" 3 and 10'2mbar.
Die Erfindung wird nun anhand einiger bevorzugter Ausführungs-beispiele näher erlâutert.The invention will now be explained in more detail with the aid of some preferred exemplary embodiments.
In einer einfachsten Ausführungsform des Verfahrens verwendet man ein Titantarget und ein Bornitridtarget, die nebeneinander in einer Targetebene angeordnet werden. Das zu beschichtende Substrat, beispielsweise eine Glasplatte, wird in geeignetem Abstand zur Targetebene parallel zu dieser so angeordnet, daß ein Teil des Substrats dem Titantarget und ein anderer Teil dem Bornitridtarget gegenüberliegt. Auf diese Weise bilden sich in einer handelsüblichen mit einem Argon-Stickstoff-Ge-misch betriebenen Sputteranordnung zwei Sputterwolken vor den Targets aus, die sich mehr oder minder durchdringen und einen Niederschlag auf dem Substrat erzeugen, der am einen Ende überwiegend aus Titan und am anderen Ende überwiegend aus Bornitrid besteht, wâhrend dazwischen kontinuierliche Über-gangszonen gebildet werden. In einer solchen Versuchsanordnung zeigt sich eine große Abhängigkeit der Härte der Beschichtung und überraschenderweise ein deutliches Maximum der Harte zwischen den beiden Enden. Größte Härtewerte ergeben sich in einem Bereich, in dem der Titananteil der Schicht etwa doppelt so hoch wie der des Bornitrids ist. Es wurden Vickers-Härte-werte von 3600 in diesem Bereich gemessen.In a simplest embodiment of the method, a titanium target and a boron nitride target are used, which are arranged next to one another in a target plane. The substrate to be coated, for example a glass plate, is arranged at a suitable distance from the target plane parallel to it so that part of the substrate is opposite the titanium target and another part is opposite the boron nitride target. In this way, in a commercial sputter arrangement operated with an argon-nitrogen mixture, two sputter clouds form in front of the targets, which penetrate more or less and produce a precipitate on the substrate, which is predominantly titanium on one end and the other End mainly consists of boron nitride, while in between continuous transition zones are formed. Such a test arrangement shows a great dependence on the hardness of the coating and, surprisingly, a clear maximum of the hardness between the two ends. The greatest hardness values result in an area in which the titanium content of the layer is approximately twice that of boron nitride. Vickers hardness values of 3600 were measured in this area.
Mit diesem einfachen Verfahren lassen sich also in schmalen Bereichen des Substrats sehr hohe Härtewerte erzielen. Will man diese Bereiche vergrößern, dann kann man entweder in der Targetebene abwechselnd eine Vielzahl von Targets der beiden Typen nebeneinander anordnen, urn eine intensive Durchdringung der Sputterwolken der beiden Typen zu erreichen, oder man kann auch das Substrat während des Sputterns durch die Wolken bewegen, indem man es beispielsweise auf einen Drehteller mon-tiert.With this simple method, very high hardness values can be achieved in narrow areas of the substrate. If you want to enlarge these areas, you can either alternately arrange a multitude of targets of the two types next to each other in order to achieve an intensive penetration of the sputtering clouds of the two types, or you can also move the substrate through the clouds during sputtering, for example by mounting it on a turntable.
Die Dicke der so erzielbaren Schichten wird durch die zuneh-mend wirksamen Druckspannungen in der Schicht begrenzt. Diese werden jedoch wesentlich reduziert, wenn als Arbeitsgas ein Argon/Stickstoff Gemisch benutzt wird - allerdings unter ge-ringfügiger Einbuße an Härte. Betragen die Partialdrücke des Stickstoffs cl.lO'^mbar und die des Argon 5.10"3mbar, können Schichten einer Dicke von 6 pm und mehr und einer Härte von über HV 3000 hergestellt werden. % >The thickness of the layers that can be achieved in this way is limited by the increasingly effective compressive stresses in the layer. However, these are significantly reduced if an argon / nitrogen mixture is used as the working gas - albeit with a slight loss of hardness. If the partial pressures of the nitrogen are cl.lO '^ mbar and those of the argon 5.10 "3mbar, layers with a thickness of 6 pm and more and a hardness of over HV 3000 can be produced.%>
Claims (4)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU87988A LU87988A1 (en) | 1991-08-08 | 1991-08-08 | METHOD FOR PRODUCING A TI-B-N COATING ON A SUBSTRATE BY SPUTTING |
| PCT/EP1992/001757 WO1993003195A1 (en) | 1991-08-08 | 1992-08-03 | PROCESS FOR FORMING A Ti-B-N-COATING ON A SUBSTRATE BY SPUTTERING |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU87988A LU87988A1 (en) | 1991-08-08 | 1991-08-08 | METHOD FOR PRODUCING A TI-B-N COATING ON A SUBSTRATE BY SPUTTING |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| LU87988A1 true LU87988A1 (en) | 1993-03-15 |
Family
ID=19731308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| LU87988A LU87988A1 (en) | 1991-08-08 | 1991-08-08 | METHOD FOR PRODUCING A TI-B-N COATING ON A SUBSTRATE BY SPUTTING |
Country Status (2)
| Country | Link |
|---|---|
| LU (1) | LU87988A1 (en) |
| WO (1) | WO1993003195A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2744461B1 (en) * | 1996-02-01 | 1998-05-22 | Tecmachine | TITANIUM NITRIDE DOPED BY BORON, SUBSTRATE COATING BASED ON THIS NEW COMPOUND, HAVING HIGH HARDNESS AND ALLOWING VERY GOOD WEAR RESISTANCE, AND PARTS WITH SUCH COATING |
| GB9711276D0 (en) * | 1997-06-03 | 1997-07-30 | Medical Support Systems Limite | Cushion |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916075A (en) * | 1972-07-22 | 1975-10-28 | Philips Corp | Chemically highly resistant material |
| US4804583A (en) * | 1987-05-26 | 1989-02-14 | Exxon Research And Engineering Company | Composition of matter that is hard and tough |
-
1991
- 1991-08-08 LU LU87988A patent/LU87988A1/en unknown
-
1992
- 1992-08-03 WO PCT/EP1992/001757 patent/WO1993003195A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993003195A1 (en) | 1993-02-18 |
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