MA29364B1 - Depot chimique en phase vapeur a la pression atmospherique - Google Patents

Depot chimique en phase vapeur a la pression atmospherique

Info

Publication number
MA29364B1
MA29364B1 MA29682A MA29682A MA29364B1 MA 29364 B1 MA29364 B1 MA 29364B1 MA 29682 A MA29682 A MA 29682A MA 29682 A MA29682 A MA 29682A MA 29364 B1 MA29364 B1 MA 29364B1
Authority
MA
Morocco
Prior art keywords
semiconductor material
atmospheric pressure
temperature
substrate
vapor deposition
Prior art date
Application number
MA29682A
Other languages
English (en)
Inventor
Norman W Johnston
Original Assignee
Galyxo Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Galyxo Gmbh filed Critical Galyxo Gmbh
Publication of MA29364B1 publication Critical patent/MA29364B1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'INVENTION PORTE SUR UN PROCÉDÉ DE REVÊTEMENT D'UN SUBSTRAT À LA PRESSION ATMOSPHÉRIQUE. CE PROCÉDÉ CONSISTE À VAPORISER UNE MASSE CONTRÔLÉE DE MATÉRIAU SEMICONDUCTEUR SENSIBLEMENT À LA PRESSION ATHMOSPHÉRIQUE À L'INTÉRIEUR D'UN FLUX GAZEUX INERTE CHAUFFÉ AFIN DE CRÉER UN MÉLANGE DE FLUIDES DONT LA TEMPÉRATURE EST SUPÉRIEURE À LA TEMPÉRATURE DE CONDENSATION DU MATÉRIAU SEMICONDUCTEUR, À DIRIGER LE MÉLANGE DE FLUIDES SENSIBLEMENT À LA TEMPÉRATURE ATMOSPHÉRIQUE SUR LE SUBSTRAT DONT LA TEMPÉRATURE EST INFÉRIEURE À LA TEMPÉRATURE DE CONDENSATION DU MATÉRIAU SEMICONDUCTEUR, ET À DÉPOSER UNE COUCHE DU MATÉRIAU SEMICONDUCTEUR SUR UNE SURFACE DU SUBSTRAT.
MA29682A 2004-08-18 2007-02-16 Depot chimique en phase vapeur a la pression atmospherique MA29364B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60240504P 2004-08-18 2004-08-18

Publications (1)

Publication Number Publication Date
MA29364B1 true MA29364B1 (fr) 2008-04-01

Family

ID=35968050

Family Applications (1)

Application Number Title Priority Date Filing Date
MA29682A MA29364B1 (fr) 2004-08-18 2007-02-16 Depot chimique en phase vapeur a la pression atmospherique

Country Status (17)

Country Link
US (2) US7674713B2 (fr)
EP (2) EP1799878B1 (fr)
JP (3) JP5026971B2 (fr)
KR (1) KR101119863B1 (fr)
CN (2) CN101432457B (fr)
BR (1) BRPI0514490A (fr)
CA (2) CA2577304C (fr)
ES (1) ES2467161T3 (fr)
IL (1) IL181394A (fr)
MA (1) MA29364B1 (fr)
MX (2) MX2007001914A (fr)
PL (1) PL1799878T3 (fr)
PT (1) PT1799878E (fr)
RU (1) RU2421418C2 (fr)
TN (1) TNSN07064A1 (fr)
WO (2) WO2006023263A2 (fr)
ZA (1) ZA200701374B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE212009000032U1 (de) 2008-03-05 2010-12-09 Global Solar Energy, Inc., Tuscon System zum Aufbringen einer Chalcogenid-Pufferschicht auf einen flexiblen Träger
WO2009111053A2 (fr) * 2008-03-05 2009-09-11 Global Solar Energy, Inc. Dépôt de couche tampon pour piles solaires à film mince
US9252318B2 (en) 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition
US8609182B2 (en) * 2008-03-05 2013-12-17 Global Solar Energy, Inc. Solution containment during buffer layer deposition
US8277869B2 (en) * 2008-03-05 2012-10-02 Global Solar Energy, Inc. Heating for buffer layer deposition
CA2649322C (fr) * 2008-09-30 2011-02-01 5N Plus Inc. Methode de production de tellurure de cadmium
MY152036A (en) * 2008-12-08 2014-08-15 Calyxo Gmbh Thin-film deposition and recirculation of a semi-conductor material
US20110207301A1 (en) * 2010-02-19 2011-08-25 Kormanyos Kenneth R Atmospheric pressure chemical vapor deposition with saturation control
DE102010028277B4 (de) 2010-04-27 2013-04-18 Calyxo Gmbh Verfahren und Vorrichtung zur Herstellung einer mit einem Halbleitermaterial beschichteten Glasscheibe und nach dem Verfahren erhältliche Solarzelle oder Solarmodul
WO2012083018A1 (fr) * 2010-12-17 2012-06-21 First Solar, Inc. Dispositif photovoltaïque
EP2707098A4 (fr) 2011-05-13 2014-05-07 Thomas J Sheperak Système, appareil et procédé de soin des blessures par faisceau d'électrons dirigé par plasma
DE102012102492A1 (de) 2012-03-22 2013-09-26 Calyxo Gmbh Solarzelle mit dispergierter Halbleiterschicht
US9324898B2 (en) 2012-09-25 2016-04-26 Alliance For Sustainable Energy, Llc Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
TWI485276B (zh) * 2013-12-05 2015-05-21 Nat Inst Chung Shan Science & Technology 提升硒化物薄膜成長品質之蒸鍍裝置
CN106319479B (zh) * 2015-07-06 2018-07-13 北大方正集团有限公司 皮带定位装置及常压化学气相沉积设备
DE102017107836A1 (de) * 2017-04-11 2018-10-11 Calyxo Gmbh Verfahren und Einrichtung zur Gasphasen-Abscheidung von Schichten
RU2683177C1 (ru) * 2017-10-05 2019-03-26 Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" Способ плазменного нанесения наноструктурированного теплозащитного покрытия

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389234A (en) * 1982-03-18 1983-06-21 M&T Chemicals Inc. Glass coating hood and method of spray coating glassware
US4504526A (en) 1983-09-26 1985-03-12 Libbey-Owens-Ford Company Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate
SU1346692A1 (ru) * 1985-07-16 1987-10-23 Предприятие П/Я В-2347 Способ нанесени никелевых покрытий
RU2023745C1 (ru) * 1991-06-09 1994-11-30 Михаил Константинович Марахтанов Способ нанесения покрытия на подложку и устройство для его осуществления
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
EP0853345B1 (fr) * 1996-05-28 2004-02-18 Matsushita Battery Industrial Co Ltd Procede de formation d'un film au tellure de cadmium
JPH10303445A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の製造方法とそれを用いた太陽電池
DE19741961A1 (de) * 1996-09-23 1998-03-26 Siemens Ag Bauteil, insbesondere Gasturbinenschaufel, mit einer Wärmedämmschicht sowie Verfahren und Vorrichtung zur Herstellung einer Wärmedämmschicht
US6037241A (en) * 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
JP2001223209A (ja) * 2000-02-08 2001-08-17 Seiko Epson Corp 絶縁性，半導電性，および導電性薄膜の製造方法
ATE381785T1 (de) * 2000-07-26 2008-01-15 Antec Solar Energy Ag Verfahren zum aktivieren von cdte- dünnschichtsolarzellen
ES2331606T3 (es) * 2001-10-05 2010-01-11 SOLAR SYSTEMS & EQUIPMENTS S.R.L. Procedimiento para la produccion a gran escala de celulas solares de pelicula delgada de cdte/cds.
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate

Also Published As

Publication number Publication date
JP2011233920A (ja) 2011-11-17
KR101119863B1 (ko) 2012-02-22
PT1799878E (pt) 2014-06-09
WO2006023263A2 (fr) 2006-03-02
BRPI0514490A (pt) 2008-06-17
MX2007001914A (es) 2008-10-24
US7674713B2 (en) 2010-03-09
EP1799878A4 (fr) 2011-10-12
IL181394A (en) 2013-05-30
JP2008514809A (ja) 2008-05-08
IL181394A0 (en) 2008-04-13
CN101432457A (zh) 2009-05-13
WO2006023262A2 (fr) 2006-03-02
US20080153268A1 (en) 2008-06-26
JP5026971B2 (ja) 2012-09-19
EP1799878B1 (fr) 2014-03-05
CN101432457B (zh) 2013-06-12
EP1794349A2 (fr) 2007-06-13
ZA200701374B (en) 2008-04-30
KR20070074545A (ko) 2007-07-12
JP2008514808A (ja) 2008-05-08
CA2577307A1 (fr) 2006-03-02
CA2577304C (fr) 2012-04-03
RU2007105817A (ru) 2008-09-27
RU2421418C2 (ru) 2011-06-20
PL1799878T3 (pl) 2014-08-29
US7635647B2 (en) 2009-12-22
TNSN07064A1 (en) 2008-06-02
MX2007001909A (es) 2008-10-24
CA2577304A1 (fr) 2006-03-02
EP1799878A2 (fr) 2007-06-27
WO2006023263A3 (fr) 2009-04-02
WO2006023262A3 (fr) 2009-04-02
US20080311729A1 (en) 2008-12-18
ES2467161T3 (es) 2014-06-12
CN101432458A (zh) 2009-05-13

Similar Documents

Publication Publication Date Title
TNSN07064A1 (en) Atmospheric pressure chemical vapor deposition
JP3945664B2 (ja) 撥水性酸化シリコン皮膜の製造方法
US20190382890A1 (en) Apparatus and method for controlling a flow process material to a deposition chamber
Hozumi et al. Preparation of silicon oxide films having a water-repellent layer by multiple-step microwave plasma-enhanced chemical vapor deposition
US20030136365A1 (en) Exhaust pipe with reactive by-product adhesion preventing means and method of preventing the adhesion
CN101100743A (zh) 金属有机化合物的化学气相淀积设备
KR910005397A (ko) 반도체 웨이퍼 상에 텅스텐 층을 cvd 증착시키는 방법
US7799377B2 (en) Organic/inorganic thin film deposition method
RU2020108294A (ru) Компонент трубопроводной арматуры с коррозионно-стойким покрытием поверхностей скольжения
US20060185591A1 (en) High temperature chemical vapor deposition apparatus
RU2010153599A (ru) Противообледенительное покрытие и его применение
US20140161978A1 (en) METHOD AND APPARATUS FOR FORMING C/SiC FUNCTIONALLY GRADED COATING
US20060057418A1 (en) Alluminide coatings containing silicon and yttrium for superalloys and method of forming such coatings
US11359286B2 (en) Quartz crystal microbalance concentration monitor
WO2011084292A3 (fr) Cellule photovoltaïque sous forme d'un film mince de silicium ayant un niveau de flou amélioré et ses procédés de fabrication
WO2006101171A1 (fr) Procédé de fabrication pour composant sous vide, dispositif de formation de revêtement de résine et système de formation de film sous vide
EP3031949B1 (fr) Dispositif de fabrication d'oled
TWI854058B (zh) Cvd反應器在沉積二維層方面的應用
ES2345910T3 (es) Estructura multicapa de pelicula delgada, componente que comprende dicha estructura y su metodo de deposicion.
WO2006130817A3 (fr) Depot d'une couche uniforme de materiau desire
WO2013125598A1 (fr) Dispositif et procédé de production d'un film mince de composé organosilicié contenant du fluor
WO2005087983A3 (fr) Procedes de substitution pour la fabrication d'heterostructures et de substrats faits de composes au silicium et d'alliages
MY152036A (en) Thin-film deposition and recirculation of a semi-conductor material
TW200625517A (en) Gradient deposition of low-k CVD materials
TW202221161A (zh) 用於以運行／通氣管線沉積ｏｌｅｄ層的裝置