MA34759B1 - Interface améliorée entre une couche de matériau à base d'éléments des groupes i-iii-vi2 et un substrat en molybdène - Google Patents

Interface améliorée entre une couche de matériau à base d'éléments des groupes i-iii-vi2 et un substrat en molybdène

Info

Publication number
MA34759B1
MA34759B1 MA36038A MA36038A MA34759B1 MA 34759 B1 MA34759 B1 MA 34759B1 MA 36038 A MA36038 A MA 36038A MA 36038 A MA36038 A MA 36038A MA 34759 B1 MA34759 B1 MA 34759B1
Authority
MA
Morocco
Prior art keywords
iii
material layer
adaptation layer
layer based
group elements
Prior art date
Application number
MA36038A
Other languages
English (en)
Inventor
Pierre-Philippe Grand
Ferrer Jesus Salvador Jaime
Emmanuel Roche
Hariklia Deligianni
Raman Vaidyanathan
Kathleen B Reuter
Qiang Huang
Lubomyr Romankiw
Maurice Mason
Donna S Zupanski-Nielsen
Original Assignee
Nexcis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexcis filed Critical Nexcis
Publication of MA34759B1 publication Critical patent/MA34759B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

La présente invention porte sur un procédé pour la fabrication d'une couche mince constituée d'un alliage d'éléments des groupes I-III-VI et ayant des propriétés photovoltaïques. Le procédé selon l'invention comprend des premières étapes consistant à : a) déposer une couche d'adaptation (MO) sur un substrat (SUB) et b) déposer au moins une couche (GERME) comprenant au moins des éléments des groupes I et/ou III, sur ladite couche d'adaptation. La couche d'adaptation est déposée dans des conditions de quasi-vide et l'étape b) comprend une première opération consistant à déposer une première couche d'éléments des groupes I et/ou III, dans les mêmes conditions que le dépôt de la couche d'adaptation, sans exposition de la couche d'adaptation à de l'air.
MA36038A 2010-12-27 2013-06-24 Interface améliorée entre une couche de matériau à base d'éléments des groupes i-iii-vi2 et un substrat en molybdène MA34759B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10306519A EP2469580A1 (fr) 2010-12-27 2010-12-27 Interface améliorée entre une couche de matériau I-III-VI2 et un substrat de molybdène
PCT/EP2011/073401 WO2012089558A1 (fr) 2010-12-27 2011-12-20 Interface améliorée entre une couche de matériau à base d'éléments des groupes i-iii-vi2 et un substrat en molybdène

Publications (1)

Publication Number Publication Date
MA34759B1 true MA34759B1 (fr) 2013-12-03

Family

ID=43899614

Family Applications (1)

Application Number Title Priority Date Filing Date
MA36038A MA34759B1 (fr) 2010-12-27 2013-06-24 Interface améliorée entre une couche de matériau à base d'éléments des groupes i-iii-vi2 et un substrat en molybdène

Country Status (11)

Country Link
US (1) US20130269780A1 (fr)
EP (2) EP2469580A1 (fr)
JP (1) JP2014502592A (fr)
KR (1) KR20140031190A (fr)
CN (1) CN103460337B (fr)
AU (1) AU2011351600B2 (fr)
BR (1) BR112013016541A2 (fr)
MA (1) MA34759B1 (fr)
TN (1) TN2013000258A1 (fr)
WO (1) WO2012089558A1 (fr)
ZA (1) ZA201304566B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935211B2 (en) 2012-04-25 2018-04-03 Guardian Glass, LLC Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
US9419151B2 (en) 2012-04-25 2016-08-16 Guardian Industries Corp. High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells
US8809674B2 (en) 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
US9246025B2 (en) 2012-04-25 2016-01-26 Guardian Industries Corp. Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
KR101389832B1 (ko) * 2012-11-09 2014-04-30 한국과학기술연구원 구리인듐셀레늄（ｃｉｇｓ） 또는 구리아연주석황（ｃｚｔｓ）계 박막형 태양전지 및 그의 제조방법
FR3028668B1 (fr) * 2014-11-13 2016-12-30 Nexcis Procede de fabrication d'une cellule photovoltaique
US10128237B2 (en) * 2016-06-24 2018-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of gate replacement in semiconductor devices
CN116119943B (zh) * 2022-12-28 2025-10-10 凯盛信息显示材料(池州)有限公司 一种低阻铜膜玻璃及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480025A (en) * 1987-09-21 1989-03-24 Hitachi Ltd Apparatus for manufacturing semiconductor
JPH0877544A (ja) * 1994-06-30 1996-03-22 Fuji Electric Co Ltd 磁気記録媒体及びその製造方法
JPH0936408A (ja) * 1995-07-25 1997-02-07 Yazaki Corp 薄膜太陽電池の製造方法及びインジウム−セレン合金の製造方法
JP3804881B2 (ja) * 1996-04-29 2006-08-02 株式会社半導体エネルギー研究所 半導体装置の作製装置および半導体装置の作製方法
AU2001272899A1 (en) * 2000-04-10 2001-10-23 Davis, Joseph And Negley Preparation of cigs-based solar cells using a buffered electrodeposition bath
CN1151560C (zh) * 2002-03-08 2004-05-26 清华大学 一种铜铟镓硒薄膜太阳能电池及其制备方法
FR2849532B1 (fr) * 2002-12-26 2005-08-19 Electricite De France Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
JP4676771B2 (ja) * 2004-05-20 2011-04-27 新光電気工業株式会社 化合物半導体太陽電池の製造方法
CN101443929A (zh) * 2004-11-10 2009-05-27 德斯塔尔科技公司 使用含碱层的过程和光电装置
EP2232576A2 (fr) * 2007-12-06 2010-09-29 Craig Leidholm Procédés et dispositifs de traitement d'une couche de précurseur dans un environnement de groupe via
DE102009011496A1 (de) * 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung
US20100255660A1 (en) * 2009-04-07 2010-10-07 Applied Materials, Inc. Sulfurization or selenization in molten (liquid) state for the photovoltaic applications
TW201042065A (en) * 2009-05-22 2010-12-01 Ind Tech Res Inst Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films
JP2013504215A (ja) * 2009-09-02 2013-02-04 ボルマン、ブレント Ｖｉａ族環境において前駆体層を処理するための方法およびデバイス
CN101771105A (zh) * 2009-12-01 2010-07-07 郭玉钦 连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法

Also Published As

Publication number Publication date
EP2666184A1 (fr) 2013-11-27
EP2469580A1 (fr) 2012-06-27
EP2666184B1 (fr) 2021-01-06
US20130269780A1 (en) 2013-10-17
CN103460337A (zh) 2013-12-18
KR20140031190A (ko) 2014-03-12
WO2012089558A1 (fr) 2012-07-05
TN2013000258A1 (en) 2014-11-10
ZA201304566B (en) 2014-09-25
BR112013016541A2 (pt) 2016-09-27
AU2011351600A1 (en) 2013-07-04
JP2014502592A (ja) 2014-02-03
CN103460337B (zh) 2016-09-14
AU2011351600B2 (en) 2015-09-17

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