MD1676G2 - Photodetector - Google Patents

Photodetector Download PDF

Info

Publication number
MD1676G2
MD1676G2 MD99-0205A MD990205A MD1676G2 MD 1676 G2 MD1676 G2 MD 1676G2 MD 990205 A MD990205 A MD 990205A MD 1676 G2 MD1676 G2 MD 1676G2
Authority
MD
Moldova
Prior art keywords
photodetector
contacting electrode
semiconductor
semistransparent
chalcogenic
Prior art date
Application number
MD99-0205A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD1676F1 (en
Inventor
Михай ЙОВУ
Сергей ШУТОВ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MD99-0205A priority Critical patent/MD1676G2/en
Publication of MD1676F1 publication Critical patent/MD1676F1/en
Publication of MD1676G2 publication Critical patent/MD1676G2/en

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Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)

Abstract

The invention relates to photonics, particularly, to the semiconductor photodetectors.The photodetector is made on a dielectric base, onto which there are applied in series the first semitransparent contacting electrode, the photosensitive layer of chalcogenic vitreous semiconductor arsenic-selenium, doped with tin of the formula (AsSe)100-x : Snx, where 7,5 £ x £ 10,0% at., and the second semistransparent contacting electrode.
MD99-0205A 1999-07-21 1999-07-21 Photodetector MD1676G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD99-0205A MD1676G2 (en) 1999-07-21 1999-07-21 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD99-0205A MD1676G2 (en) 1999-07-21 1999-07-21 Photodetector

Publications (2)

Publication Number Publication Date
MD1676F1 MD1676F1 (en) 2001-05-31
MD1676G2 true MD1676G2 (en) 2001-12-31

Family

ID=19739447

Family Applications (1)

Application Number Title Priority Date Filing Date
MD99-0205A MD1676G2 (en) 1999-07-21 1999-07-21 Photodetector

Country Status (1)

Country Link
MD (1) MD1676G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3548G2 (en) * 2007-04-27 2008-10-31 Институт Прикладной Физики Академии Наук Молдовы Photosensitive cell of the photodetector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3548G2 (en) * 2007-04-27 2008-10-31 Институт Прикладной Физики Академии Наук Молдовы Photosensitive cell of the photodetector

Also Published As

Publication number Publication date
MD1676F1 (en) 2001-05-31

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