MD2245F1 - Process for obtaining thin layers of oxidic semiconductors - Google Patents
Process for obtaining thin layers of oxidic semiconductors Download PDFInfo
- Publication number
- MD2245F1 MD2245F1 MD20030019A MD20030019A MD2245F1 MD 2245 F1 MD2245 F1 MD 2245F1 MD 20030019 A MD20030019 A MD 20030019A MD 20030019 A MD20030019 A MD 20030019A MD 2245 F1 MD2245 F1 MD 2245F1
- Authority
- MD
- Moldova
- Prior art keywords
- thin layers
- obtaining
- onto
- semiconductor
- pulverization
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 238000010298 pulverizing process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000007900 aqueous suspension Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 230000003301 hydrolyzing effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
The invention relates to the field of semiconductor physics and may be used for obtaining of thin semiconductor layers, in particular of thin layers of oxide semiconductors. Summary of the invention consists in that the process includes the preliminary obtaining by hydrolytic way of the aqueous suspension of semiconductor oxide and pulverization thereof onto the heated substrate. The pulverization is carried out inside the electric furnace, using oxygen in the capacity of disperse gas, the deposition of the suspension being realized onto the substrate, placed onto a rotary support, with the simultaneous air removal outside the furnace.The result of the invention consists in obtaining uniform in thickness thin layers with identical electric and optical parameters along the whole surface.Claims: 1Fig.: 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20030019A MD2245G2 (en) | 2003-01-21 | 2003-01-21 | Process for obtaining thin layers of oxidic semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20030019A MD2245G2 (en) | 2003-01-21 | 2003-01-21 | Process for obtaining thin layers of oxidic semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD2245F1 true MD2245F1 (en) | 2003-08-31 |
| MD2245G2 MD2245G2 (en) | 2004-02-29 |
Family
ID=29268035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20030019A MD2245G2 (en) | 2003-01-21 | 2003-01-21 | Process for obtaining thin layers of oxidic semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD2245G2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
-
2003
- 2003-01-21 MD MDA20030019A patent/MD2245G2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD2245G2 (en) | 2004-02-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |