MD3257G2 - Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 - Google Patents
Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 Download PDFInfo
- Publication number
- MD3257G2 MD3257G2 MDA20060083A MD20060083A MD3257G2 MD 3257 G2 MD3257 G2 MD 3257G2 MD A20060083 A MDA20060083 A MD A20060083A MD 20060083 A MD20060083 A MD 20060083A MD 3257 G2 MD3257 G2 MD 3257G2
- Authority
- MD
- Moldova
- Prior art keywords
- gallium
- arsenic
- solution
- arsenate
- waste
- Prior art date
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052733 gallium Inorganic materials 0.000 title abstract 6
- 239000002699 waste material Substances 0.000 title abstract 5
- 229910052785 arsenic Inorganic materials 0.000 title abstract 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000011084 recovery Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000243 solution Substances 0.000 abstract 5
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 abstract 4
- 229940000489 arsenate Drugs 0.000 abstract 4
- 238000004090 dissolution Methods 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000002244 precipitate Substances 0.000 abstract 2
- 238000001556 precipitation Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910000413 arsenic oxide Inorganic materials 0.000 abstract 1
- 229960002594 arsenic trioxide Drugs 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 abstract 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 229910001195 gallium oxide Inorganic materials 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000012047 saturated solution Substances 0.000 abstract 1
- 230000002269 spontaneous effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Manufacture And Refinement Of Metals (AREA)
- Removal Of Specific Substances (AREA)
Abstract
The invention relates to processes for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers.The process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 includes dissolution of waste in the 33% nitric acid solution in hydrochloric acid, modification of the pH solution from 0,5…1,5 up to 3,0…4,5 by addition of a base solution with further precipitation of the gallium arsenate. The obtained precipitate is filtered, washed with deionized water and dried at the temperature of 90…120°C during 60 min; then it is decomposed into gallium oxide and arsenic oxide. The arsenic is reduced with carbon from oxide at the temperature of 680…780°C, and gallium is reduced into a graphite container at the temperature of 750…860°C in hydrogen flux.The gallium arsenate precipitate may also be obtained by additional dissolution, up to saturation, of the GaAs plates in the acid solution obtained at the waste dissolution, and the saturated solution is stored during 22 days at the room temperature for spontaneous precipitation of arsenate, afterwards the solution with arsenate is heated up to 60°C, in vacuum, during 2…4 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060083A MD3257G2 (en) | 2006-03-17 | 2006-03-17 | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060083A MD3257G2 (en) | 2006-03-17 | 2006-03-17 | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD3257F1 MD3257F1 (en) | 2007-02-28 |
| MD3257G2 true MD3257G2 (en) | 2007-09-30 |
Family
ID=37845209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20060083A MD3257G2 (en) | 2006-03-17 | 2006-03-17 | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3257G2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD176Z (en) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for the manufacture of high-voltage diode |
| MD196Z (en) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | High-temperature diode column |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967330A (en) * | 1982-10-08 | 1984-04-17 | Dowa Mining Co Ltd | Separation of gallium |
| MD2937C2 (en) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
-
2006
- 2006-03-17 MD MDA20060083A patent/MD3257G2/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967330A (en) * | 1982-10-08 | 1984-04-17 | Dowa Mining Co Ltd | Separation of gallium |
| MD2937C2 (en) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD176Z (en) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for the manufacture of high-voltage diode |
| MD196Z (en) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | High-temperature diode column |
Also Published As
| Publication number | Publication date |
|---|---|
| MD3257F1 (en) | 2007-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |