MD4280B1 - Procedeu de creştere a structurii pInP-nCdS - Google Patents

Procedeu de creştere a structurii pInP-nCdS Download PDF

Info

Publication number
MD4280B1
MD4280B1 MDA20130062A MD20130062A MD4280B1 MD 4280 B1 MD4280 B1 MD 4280B1 MD A20130062 A MDA20130062 A MD A20130062A MD 20130062 A MD20130062 A MD 20130062A MD 4280 B1 MD4280 B1 MD 4280B1
Authority
MD
Moldova
Prior art keywords
ncds
pinp
substrate
growth method
cdcl2
Prior art date
Application number
MDA20130062A
Other languages
English (en)
Moldavian (mo)
Russian (ru)
Other versions
MD4280C1 (ro
Inventor
Vasile Botnariuc
Leonid Gorceac
Andrei Coval
Boris Cinic
Simion Raevschi
Original Assignee
Universitatea De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitatea De Stat Din Moldova filed Critical Universitatea De Stat Din Moldova
Priority to MDA20130062A priority Critical patent/MD4280C1/ro
Publication of MD4280B1 publication Critical patent/MD4280B1/ro
Publication of MD4280C1 publication Critical patent/MD4280C1/ro

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la fabricarea dispozitivelor de conversie a radiaţiei solare în energie electrică.Procedeul de creştere a structurii pInP-nCdS include amplasarea unui substrat de pInP, corodat preventiv, cu orientarea cristalografică (100) şi dezorientarea de 3…5° în direcţia (110) într-un reactor, încălzirea zonei de creştere a substratului şi stabilizarea temperaturii în diapazonul de 400…450°C, pulverizarea, în flux deschis de oxigen, a soluţiilor de CdCl2 şi SnCl4 cu formarea pe substrat a unui strat de Cd2SnO4, apoi pulverizarea soluţiilor de CdCl2 şi CS(NH2)2 cu formarea pe acesta a unui strat de nCdS.
MDA20130062A 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS MD4280C1 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20130062A MD4280C1 (ro) 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20130062A MD4280C1 (ro) 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS

Publications (2)

Publication Number Publication Date
MD4280B1 true MD4280B1 (ro) 2014-03-31
MD4280C1 MD4280C1 (ro) 2014-10-31

Family

ID=50685394

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20130062A MD4280C1 (ro) 2013-09-04 2013-09-04 Procedeu de creştere a structurii pInP-nCdS

Country Status (1)

Country Link
MD (1) MD4280C1 (ro)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554B1 (ro) * 2017-10-18 2018-02-28 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (ro) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD626G2 (ro) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS
MD673G2 (ro) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor InP
US6270573B1 (en) * 1997-08-27 2001-08-07 Matsushita Electric Industrial Co., Ltd. Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate
US6407014B1 (en) * 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
JP3920103B2 (ja) * 2002-01-31 2007-05-30 大阪府 絶縁層埋め込み型半導体炭化シリコン基板の製造方法及びその製造装置
WO2007119123A2 (en) * 2005-08-26 2007-10-25 Smoltek Ab Interconnects and heat dissipators based on nanostructures
MD151Z (ro) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
MD4554B1 (ro) * 2017-10-18 2018-02-28 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS

Also Published As

Publication number Publication date
MD4280C1 (ro) 2014-10-31

Similar Documents

Publication Publication Date Title
Verreet et al. Microcrystalline organic thin-film solar cells
MY170170A (en) Optoelectonic device
Jin et al. Development of CVD Ti-containing films
PH12018501440A1 (en) Aerosol delivery device with improved fluid transport
ZA201800448B (en) Energy-efficient high level device, plant and method for the use of thermal energy of solar origin
TW201614104A (en) Etching method, method of manufacturing article, and etching solution
WO2012013965A9 (en) Method of producing a light emitting device
GB201100974D0 (en) Metamorphic substrate system and method of manufacture of same
WO2014134507A3 (en) Pedestal construction with low coefficient of thermal expansion top
JP2012033472A5 (ro)
MY183935A (en) Solar cell production method and solar cell treatment method
MY195436A (en) Coating and Coating Formulation
MY183477A (en) Passivation of light-receiving surfaces of solar cells with crystalline silicon
IL268411A (en) An efficient energy consumption device, system and method for using heat energy from a solar source
MY188961A (en) High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells
MD4280B1 (ro) Procedeu de creştere a structurii pInP-nCdS
EP3394901A4 (en) Back contact solar cell substrate, method of manufacturing the same and back contact solar cell
TWI560148B (en) Perovskite donor layer applied to active layer of thin-film solar cell and method for manufacturing the same
RU2017105087A (ru) Солнечный элемент и способ его изготовления
MX2016005844A (es) Metodo para obtener un material fotocatalitico.
EP3067950A4 (en) Coating material for forming semiconductors, semiconductor thin film, thin film solar cell and method for manufacturing thin film solar cell
TW201714318A (en) Solar cell structure and method for manufacturing the same
PH12014502089A1 (en) Gaseous ozone (o3) treatment for solar cell fabrication
EP3041030A4 (en) Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, method for producing semiconductor substrate with n-type diffusion layer, and method for manufacturing solar cell element
WO2013103753A8 (en) Articles, devices, systems, and methods for solar energy storage and/or utilization

Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees