MD4339C1 - Фотовольтаическая однопереходная структура - Google Patents
Фотовольтаическая однопереходная структура Download PDFInfo
- Publication number
- MD4339C1 MD4339C1 MDA20130070A MD20130070A MD4339C1 MD 4339 C1 MD4339 C1 MD 4339C1 MD A20130070 A MDA20130070 A MD A20130070A MD 20130070 A MD20130070 A MD 20130070A MD 4339 C1 MD4339 C1 MD 4339C1
- Authority
- MD
- Moldova
- Prior art keywords
- sic
- layer
- silicon carbide
- photovoltaic
- type conduction
- Prior art date
Links
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 45
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000007787 solid Substances 0.000 claims abstract description 5
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000005065 mining Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 238000005504 petroleum refining Methods 0.000 abstract 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Изобретение относится к полупроводниковым фотовольтаическим структурам, используемым в электронике, космических и военных технологиях, горнодобывающей, нефтеперерабатывающей, химической отраслях промышленности, экологии и др. для преобразования солнечного излучения в электрическую энергию, используемую для питания электронных приборов и электроприводов устройств и механизмов.Фотовольтаическая однопереходная структура содержит слой карбида кремния n-типа проводимости, подложку из монокристаллической пластины Si ориентации (100) p-типа проводимости, верхний и нижний металлические электроды. Структура представляет собой двухслойный компонент p-n гетероперехода a-SiC/c-Si, где слой аморфного карбида кремния n-типа проводимости с толщиной пленки 6…20 нм нанесен на предварительно подготовленную поверхность монокристаллической кремниевой подложки p-типа проводимости путем нереактивного магнетронного распыления в аргоне из твердотельной мишени SiC. Верхний электрод выполнен в виде контактной гребенки из серебра или меди и расположен непосредственно на слое a-SiC. Нижний электрод из серебра или меди расположен на обратной стороне подложки монокристаллического кремния.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2013113078/28A RU2532857C1 (ru) | 2013-03-22 | 2013-03-22 | Фотовольтаическая структура |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4339B1 MD4339B1 (ru) | 2015-03-31 |
| MD4339C1 true MD4339C1 (ru) | 2016-01-31 |
Family
ID=51656430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20130070A MD4339C1 (ru) | 2013-03-22 | 2013-10-03 | Фотовольтаическая однопереходная структура |
Country Status (2)
| Country | Link |
|---|---|
| MD (1) | MD4339C1 (ru) |
| RU (1) | RU2532857C1 (ru) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2577174C1 (ru) * | 2014-12-18 | 2016-03-10 | Общество с ограниченной ответственностью "Энергоэкотех" | Покрытие для фотовольтаической ячейки и способ его изготовления |
| CN110993743A (zh) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种异质结光伏器件的制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289886A (ja) * | 2001-03-27 | 2002-10-04 | Hikari Kobayashi | 半導体膜の処理方法，光起電力素子の製造方法及び光起電力素子 |
| MD3112G2 (ru) * | 2005-06-16 | 2007-02-28 | Государственный Университет Молд0 | Тонкослойная солнечная ячейка |
| MD3737G2 (ru) * | 2007-03-26 | 2009-05-31 | Институт Прикладной Физики Академии Наук Молдовы | Двухсторонний солнечный элемент и способ его изготовления |
| KR20120003116A (ko) * | 2010-07-02 | 2012-01-10 | 강민석 | 탄화규소 광전지 소자의 표면 나노 구조 조직화 방법 및 그를 이용한 다이오드 구조 |
| US20130255775A1 (en) * | 2012-04-02 | 2013-10-03 | Nusola, Inc. | Wide band gap photovoltaic device and process of manufacture |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145221C (zh) * | 1996-09-26 | 2004-04-07 | 阿克佐诺贝尔公司 | 制造光电箔的方法和使用该方法得到的光电箔 |
| JP3776098B2 (ja) * | 2003-09-29 | 2006-05-17 | 圭弘 浜川 | 光発電装置 |
| CN101820006B (zh) * | 2009-07-20 | 2013-10-02 | 湖南共创光伏科技有限公司 | 高转化率硅基单结多叠层pin薄膜太阳能电池及其制造方法 |
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2013
- 2013-03-22 RU RU2013113078/28A patent/RU2532857C1/ru not_active IP Right Cessation
- 2013-10-03 MD MDA20130070A patent/MD4339C1/ru not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289886A (ja) * | 2001-03-27 | 2002-10-04 | Hikari Kobayashi | 半導体膜の処理方法，光起電力素子の製造方法及び光起電力素子 |
| MD3112G2 (ru) * | 2005-06-16 | 2007-02-28 | Государственный Университет Молд0 | Тонкослойная солнечная ячейка |
| MD3737G2 (ru) * | 2007-03-26 | 2009-05-31 | Институт Прикладной Физики Академии Наук Молдовы | Двухсторонний солнечный элемент и способ его изготовления |
| KR20120003116A (ko) * | 2010-07-02 | 2012-01-10 | 강민석 | 탄화규소 광전지 소자의 표면 나노 구조 조직화 방법 및 그를 이용한 다이오드 구조 |
| US20130255775A1 (en) * | 2012-04-02 | 2013-10-03 | Nusola, Inc. | Wide band gap photovoltaic device and process of manufacture |
Non-Patent Citations (6)
| Title |
|---|
| A. Solangi, M. I. Chaudhry, Amorphous and Crystalline Silicon Carbide IV, Springer, Proceedings in Physics, Volume 71, 1992, p. 362-367 * |
| Banerjee C., Haga K., Miyajima S., Yamada A., Konagai M., Fabrication of μc-3C-SiC/c-Si Heterojunction Solar Cell by Hot Wire CVD System, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference, on 7-12 May 2006, V.2, p.1334 - 1337 * |
| Y. Hamakawa, Recent progress of the amorphous silicon solar cells and their technology, Journal de Physique, Suppl №10, V. 42, 1981, p. C4-1131 * |
| Y. Matsumoto, G. Hirata, H. Takakura, H. Okamoto, and Y. Hamakawa, A new type of high efficiency with a low cost solar cell having the structure of a μc SiC/polycrystalline silicon heterojunction J. Appl. Phys. 67, 6538, 1990 * |
| Yoshihisa Tawada, Hideo Yamagishi, Mass-production of large size a-Si modules and future plan, Solar Energy Materials & Solar Cells 66, 2001, p. 95-105 * |
| Агеев О.А., Беляев А.Е., Болтовец Н.С., Киселев B.C., Конакова Р.В., Лебедев А.А., Миленин В В., Охрименко О.Б., Поляков В. В., Светличный A.M., Чередниченко Д.И. Карбид кремния: технология, свойства, применение. Харьков, «ИСМА», 2010, c.532 * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD4339B1 (ru) | 2015-03-31 |
| RU2532857C1 (ru) | 2014-11-10 |
| RU2013113078A (ru) | 2014-09-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |