MD4517C1 - Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene - Google Patents

Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene

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Publication number
MD4517C1
MD4517C1 MDA20160110A MD20160110A MD4517C1 MD 4517 C1 MD4517 C1 MD 4517C1 MD A20160110 A MDA20160110 A MD A20160110A MD 20160110 A MD20160110 A MD 20160110A MD 4517 C1 MD4517 C1 MD 4517C1
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MD
Moldova
Prior art keywords
gaseous
seed
zno single
single crystals
zno
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MDA20160110A
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English (en)
Russian (ru)
Other versions
MD4517B1 (ro
Inventor
Глеб КОЛИБАБА
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Государственный Университет Молд0
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Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20160110A priority Critical patent/MD4517C1/ro
Publication of MD4517B1 publication Critical patent/MD4517B1/ro
Publication of MD4517C1 publication Critical patent/MD4517C1/ro

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Abstract

Invenţia se referă la tehnica semiconductoare, şi anume la procedee de obţinere a materialelor semiconductoare, în particular la creşterea monocristalelor de ZnO din faza gazoasă fără germene într-un volum închis.Procedeul, conform invenţiei, constă în creşterea monocristalului de ZnO din faza gazoasă fără germene într-un volum închis, în care se încarcă materialul de creştere de ZnO, cu utilizarea agenţilor chimici de transport HCl, cu o presiune iniţială la temperatura de creştere de 1...4 atm, şi CO, luaţi într-un raport molar HCl:CO de 0,25...1. Creşterea monocristalului se efectuează la o temperatură de 900...1100°C în două etape. La prima etapă diferenţa de temperaturi dintre materialul de creştere şi cristalul în creştere este de 3...10°C, iar la etapa a doua diferenţa este de 10...60°C.
MDA20160110A 2016-10-11 2016-10-11 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene MD4517C1 (ro)

Priority Applications (1)

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MDA20160110A MD4517C1 (ro) 2016-10-11 2016-10-11 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20160110A MD4517C1 (ro) 2016-10-11 2016-10-11 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene

Publications (2)

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MD4517B1 MD4517B1 (ro) 2017-09-30
MD4517C1 true MD4517C1 (ro) 2018-04-30

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57123969A (en) * 1981-01-26 1982-08-02 Semiconductor Energy Lab Co Ltd Formation of zinc oxide film by vapor phase method using plasma
CN1542171A (zh) * 2003-11-04 2004-11-03 浙江大学 生长氧化锌半导体薄膜的金属有机化合物汽相沉积装置
CN1844488A (zh) * 2006-03-24 2006-10-11 中国科学院上海硅酸盐研究所 氧化锌单晶的通气坩埚下降生长方法
MD3320G2 (ro) * 2006-03-24 2007-12-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a oxidului de zinc nanostructurat
US20080006200A1 (en) * 2001-12-24 2008-01-10 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
CN101328609A (zh) * 2008-04-11 2008-12-24 北京科技大学 一种气相沉积制备锡掺杂氧化锌纳米线的方法
CN101445265A (zh) * 2008-09-23 2009-06-03 河南大学 气相沉积制备掺杂单晶氧化锌纳米螺丝刀的方法及其装置
MD4455B1 (ro) * 2015-11-27 2016-12-31 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57123969A (en) * 1981-01-26 1982-08-02 Semiconductor Energy Lab Co Ltd Formation of zinc oxide film by vapor phase method using plasma
US20080006200A1 (en) * 2001-12-24 2008-01-10 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
CN1542171A (zh) * 2003-11-04 2004-11-03 浙江大学 生长氧化锌半导体薄膜的金属有机化合物汽相沉积装置
CN1844488A (zh) * 2006-03-24 2006-10-11 中国科学院上海硅酸盐研究所 氧化锌单晶的通气坩埚下降生长方法
MD3320G2 (ro) * 2006-03-24 2007-12-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a oxidului de zinc nanostructurat
CN101328609A (zh) * 2008-04-11 2008-12-24 北京科技大学 一种气相沉积制备锡掺杂氧化锌纳米线的方法
CN101445265A (zh) * 2008-09-23 2009-06-03 河南大学 气相沉积制备掺杂单晶氧化锌纳米螺丝刀的方法及其装置
MD4455B1 (ro) * 2015-11-27 2016-12-31 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
A.Mycielski, et al. The chemical vapour transport growth of ZnO single crystals. Journal of Alloys and Compounds 371, 2004, pp. 150-152 *
G. V. Colibaba. CVT ZnO SINGLE CRYSTAL GROWTH BASED ON HCL-CO GAS MIXTURE. 8th International Conference on Materials Science and Condensed Matter Physics, Chişinău, Republica Moldova, septembrie 12-16, 2016, p. 106 *
Koichi Matsumoto, Goro Shimaoka. Crystal growth of ZnO by chemical transport. Journal of Crystal Growth 86, 1988, pp. 410-414 *

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