MX2017007356A - Fuente de plasma del catodo hueco. - Google Patents

Fuente de plasma del catodo hueco.

Info

Publication number
MX2017007356A
MX2017007356A MX2017007356A MX2017007356A MX2017007356A MX 2017007356 A MX2017007356 A MX 2017007356A MX 2017007356 A MX2017007356 A MX 2017007356A MX 2017007356 A MX2017007356 A MX 2017007356A MX 2017007356 A MX2017007356 A MX 2017007356A
Authority
MX
Mexico
Prior art keywords
plasma source
cavity
hollow cathode
cathode plasma
cross
Prior art date
Application number
MX2017007356A
Other languages
English (en)
Inventor
BIQUET Tomas
Maschwitz Peter
Chambers John
Wiame Hughes
Original Assignee
Agc Flat Glass Europe S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agc Flat Glass Europe S A filed Critical Agc Flat Glass Europe S A
Publication of MX2017007356A publication Critical patent/MX2017007356A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/481—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2240/00—Testing
    • H05H2240/10—Testing at atmospheric pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments
    • H05H2245/42—Coating or etching of large items

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatment Of Fiber Materials (AREA)

Abstract

La presente invención se refiere a una fuente de plasma de cátodo hueco y a métodos para tratar o revestir superficies utilizando una fuente de plasma, que comprende electrodos primero y segundo (1, 2), cada electrodo comprende una cavidad alargada (4), en donde las dimensiones de al menos uno de los siguientes parámetros se selecciona a fin de asegurar alta densidad de electrones y/o baja cantidad de pulverización de superficies de la cavidad de la fuente de plasma, esos parámetros siendo forma de la sección transversal de la cavidad, área de la sección transversal de la cavidad, distancia en la cavidad de la cavidad (11), y la anchura de la boquilla de salida (12).
MX2017007356A 2014-12-05 2014-12-05 Fuente de plasma del catodo hueco. MX2017007356A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/068858 WO2016089424A1 (en) 2014-12-05 2014-12-05 Hollow cathode plasma source

Publications (1)

Publication Number Publication Date
MX2017007356A true MX2017007356A (es) 2018-04-11

Family

ID=56092179

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017007356A MX2017007356A (es) 2014-12-05 2014-12-05 Fuente de plasma del catodo hueco.

Country Status (11)

Country Link
US (1) US10586685B2 (es)
EP (1) EP3228160B1 (es)
JP (1) JP6710686B2 (es)
KR (1) KR102272311B1 (es)
CN (1) CN107852805B (es)
BR (1) BR112017011612A2 (es)
EA (1) EA201791234A1 (es)
ES (1) ES2883288T3 (es)
MX (1) MX2017007356A (es)
MY (1) MY192286A (es)
WO (1) WO2016089424A1 (es)

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CN105154856B (zh) 2008-08-04 2018-08-10 北美Agc平板玻璃公司 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法
CN107615888B (zh) 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
MX2017007356A (es) 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
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US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
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US11640900B2 (en) 2020-02-12 2023-05-02 Nano-Master, Inc. Electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS)
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
US20240279811A1 (en) * 2021-02-12 2024-08-22 Agc Glass Europe Method of producing a water repellent coating onto textile substrates using a plasma generated by hollow cathodes
US12180586B2 (en) 2021-08-13 2024-12-31 NanoMaster, Inc. Apparatus and methods for roll-to-roll (R2R) plasma enhanced/activated atomic layer deposition (PEALD/PAALD)
CN115295388A (zh) * 2022-08-23 2022-11-04 盛吉盛半导体科技(北京)有限公司 一种空心阴极等离子体源以及半导体反应设备
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MY192286A (en) 2022-08-17
BR112017011612A2 (pt) 2018-01-16
KR20170131343A (ko) 2017-11-29
CN107852805B (zh) 2020-10-16
ES2883288T3 (es) 2021-12-07
WO2016089424A1 (en) 2016-06-09
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