MX2017014097A - Amplificador de potencia compuesto. - Google Patents

Amplificador de potencia compuesto.

Info

Publication number
MX2017014097A
MX2017014097A MX2017014097A MX2017014097A MX2017014097A MX 2017014097 A MX2017014097 A MX 2017014097A MX 2017014097 A MX2017014097 A MX 2017014097A MX 2017014097 A MX2017014097 A MX 2017014097A MX 2017014097 A MX2017014097 A MX 2017014097A
Authority
MX
Mexico
Prior art keywords
amplifiers
sub
power amplifier
composite power
transmission line
Prior art date
Application number
MX2017014097A
Other languages
English (en)
Other versions
MX369193B (es
Inventor
Hellberg Richard
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of MX2017014097A publication Critical patent/MX2017014097A/es
Publication of MX369193B publication Critical patent/MX369193B/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Se describe un amplificador de potencia compuesto (100) para la amplificación de una señal de entrada en una señal de salida. El amplificador de potencia compuesto (100) comprende un puerto de entrada (170) para recibir la señal de entrada, y un puerto de salida (180) para proporcionar la señal de salida. Además, el amplificador de potencia compuesto (100) comprende un primer conjunto (110) de sub-amplificadores, que comprende al menos dos sub-amplificadores (111, 112), en donde las al menos dos sub-amplificadores (111, 112) están dispuestos a lo largo de un ahusamiento de una primera línea de transmisión (151), en donde la primera línea de transmisión (151) está conectada al primer conjunto (110) de sub-amplificadores y el puerto de salida (180). Además, el amplificador de potencia compuesto (100) comprende un segundo conjunto (120) de sub-amplificadores, que comprende al menos dos sub-amplificadores (121, 122), en donde los al menos dos sub-amplificadores (121, 122) están dispuestos a lo largo de un ahusamiento de una segunda línea de transmisión (152), en donde la segunda línea de transmisión (152) se conecta con el segundo conjunto (120) de los sub-amplificadores y el puerto de salida (180).
MX2017014097A 2015-05-12 2015-05-12 Amplificador de potencia compuesto. MX369193B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SE2015/050529 WO2016182485A1 (en) 2015-05-12 2015-05-12 Composite power amplifier

Publications (2)

Publication Number Publication Date
MX2017014097A true MX2017014097A (es) 2018-03-16
MX369193B MX369193B (es) 2019-10-31

Family

ID=57249295

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017014097A MX369193B (es) 2015-05-12 2015-05-12 Amplificador de potencia compuesto.

Country Status (6)

Country Link
US (1) US10205424B2 (es)
EP (1) EP3295561B1 (es)
JP (1) JP6608959B2 (es)
CN (1) CN107534419B (es)
MX (1) MX369193B (es)
WO (1) WO2016182485A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3369174B1 (en) 2015-10-27 2019-12-04 Telefonaktiebolaget LM Ericsson (publ) Distributed power amplifiers
MX382691B (es) 2016-04-11 2025-03-13 Ericsson Telefon Ab L M Sistema amplificador de potencia modular y escalable.
US10944369B2 (en) 2016-07-14 2021-03-09 Telefonaktiebolaget Lm Ericsson (Publ) Amplifier circuit and method for compensating an output signal provided at an output of the amplifier circuit
JP2020516192A (ja) 2017-04-06 2020-05-28 テレフオンアクチーボラゲット エルエム エリクソン（パブル） 広帯域電力増幅器装置
US12362709B2 (en) 2019-09-10 2025-07-15 Telefonaktiebolaget Lm Ericsson (Publ) Sequential continuous wideband amplifiers
JP7490050B2 (ja) * 2019-09-16 2024-05-24 華為技術有限公司 電力増幅回路、送信機、およびネットワークデバイス
US12615017B2 (en) 2020-03-23 2026-04-28 Telefonaktiebolaget Lm Ericsson (Publ) Amplifier circuits and methods of operating an amplifier circuit

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US3593174A (en) * 1969-06-05 1971-07-13 Westinghouse Electric Corp Solid state amplifier for microwave frequency signals
US6653898B2 (en) * 2000-12-28 2003-11-25 Samsung Electronics Co., Ltd. High efficiency stage-switching CDMA power amplifier
SE522479C2 (sv) 2002-01-16 2004-02-10 Ericsson Telefon Ab L M Sammansatt effektförstärkare
JP4715994B2 (ja) * 2004-08-26 2011-07-06 日本電気株式会社 ドハティ増幅器並列運転回路
US7764120B2 (en) * 2008-08-19 2010-07-27 Cree, Inc. Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels
US8441321B2 (en) * 2008-12-09 2013-05-14 Telefonaktiebolaget L M Ericsson (Publ) Multi-stage amplifier
WO2010074615A1 (en) 2008-12-22 2010-07-01 Telefonaktiebolaget L M Ericsson (Publ) A multi stage amplifier
CN102282761B (zh) * 2009-01-26 2016-03-23 日本电气株式会社 高频放大器、无线设备和控制方法
FR2944928B1 (fr) 2009-04-24 2011-06-24 Thales Sa Dispositif d'amplification de puissance a encombrement reduit
JP5527563B2 (ja) * 2010-07-02 2014-06-18 日本電気株式会社 高周波電力増幅器
US20130021104A1 (en) * 2011-07-18 2013-01-24 Ubidyne, Inc. Amplifier arrangement
EP2608400B1 (en) * 2011-12-20 2014-08-13 Nxp B.V. N way Doherty amplifier
CN104335486A (zh) * 2012-05-29 2015-02-04 日本电气株式会社 多系统放大装置
US20140111279A1 (en) * 2012-10-19 2014-04-24 Samsung Electronics Co., Ltd Envelope tracking distributed amplifier
US9413298B2 (en) * 2012-12-28 2016-08-09 Peregrine Semiconductor Corporation Amplifier dynamic bias adjustment for envelope tracking
CN103107778B (zh) * 2012-12-31 2016-03-02 东南大学 一种可降低三阶互调的多赫尔蒂功率放大器及其调试方法
EP3005556B1 (en) 2013-05-27 2018-11-21 Telefonaktiebolaget LM Ericsson (publ) Amplifier circuit and method
EP3014764B1 (en) * 2013-06-28 2019-11-27 Telefonaktiebolaget LM Ericsson (publ) Amplifier circuit and method
CN104333332B (zh) * 2013-07-22 2019-08-27 南京中兴新软件有限责任公司 一种Doherty功放的控制方法和装置
US9118279B2 (en) * 2013-10-03 2015-08-25 Freescale Semiconductor, Inc. Power amplifiers with signal conditioning
EP3058653A4 (en) * 2013-10-18 2016-11-09 Ericsson Telefon Ab L M POWER AMPLIFIER FOR GAINING AN INPUT SIGNAL INTO AN OUTPUT SIGNAL

Also Published As

Publication number Publication date
EP3295561B1 (en) 2020-07-08
US20180102744A1 (en) 2018-04-12
CN107534419B (zh) 2021-03-23
EP3295561A1 (en) 2018-03-21
JP6608959B2 (ja) 2019-11-20
EP3295561A4 (en) 2018-12-19
CN107534419A (zh) 2018-01-02
US10205424B2 (en) 2019-02-12
JP2018515043A (ja) 2018-06-07
MX369193B (es) 2019-10-31
WO2016182485A1 (en) 2016-11-17

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