MX336541B - Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. - Google Patents

Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.

Info

Publication number
MX336541B
MX336541B MX2012006821A MX2012006821A MX336541B MX 336541 B MX336541 B MX 336541B MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 336541 B MX336541 B MX 336541B
Authority
MX
Mexico
Prior art keywords
making
methods
thin film
solar cell
same
Prior art date
Application number
MX2012006821A
Other languages
English (en)
Other versions
MX2012006821A (es
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of MX2012006821A publication Critical patent/MX2012006821A/es
Publication of MX336541B publication Critical patent/MX336541B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)

Abstract

Un método para aumentar la turbidez de un apilamiento de recubrimiento que tiene una capa superior y una capa de sub-recubrimiento usando un proceso de recubrimiento por deposición química en fase vapor que incluye, al menos, uno de: aumentar un caudal de precursor; disminuir un caudal de gas portador; aumentar una temperatura de sustrato; aumentar un caudal de agua; disminuir un caudal de escape; y aumentar un espesor de al menos una de la capa superior o capa de sub-recubrimiento.
MX2012006821A 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. MX336541B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,299 US9224892B2 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved haze and methods of making the same
PCT/US2010/059037 WO2011084292A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved haze and methods of making the same

Publications (2)

Publication Number Publication Date
MX2012006821A MX2012006821A (es) 2012-07-23
MX336541B true MX336541B (es) 2016-01-22

Family

ID=44149391

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012006821A MX336541B (es) 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.

Country Status (12)

Country Link
US (1) US9224892B2 (es)
EP (1) EP2517259B1 (es)
JP (1) JP5607180B2 (es)
KR (1) KR101511015B1 (es)
BR (1) BR112012014980A2 (es)
IN (1) IN2012DN05184A (es)
MX (1) MX336541B (es)
MY (1) MY159272A (es)
RU (1) RU2526298C2 (es)
TR (1) TR201908926T4 (es)
TW (2) TWI524539B (es)
WO (1) WO2011084292A2 (es)

Families Citing this family (9)

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EP2577736A2 (en) * 2010-05-26 2013-04-10 The University of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
CN102420260A (zh) * 2011-11-03 2012-04-18 同济大学 薄膜硅太阳能电池的背散射表面及其制备方法
KR101684446B1 (ko) * 2013-03-12 2016-12-08 비트로, 에스.에이.비. 데 씨.브이. 태양 전지용 고 헤이즈 하부층
US9627652B2 (en) 2013-12-26 2017-04-18 Vitro, S.A.B. De C.V. Organic light emitting diode with light extracting electrode
KR102098123B1 (ko) * 2014-12-19 2020-04-08 커먼웰쓰 사이언티픽 앤 인더스트리알 리서치 오거니제이션 광전자 장치의 광활성 층을 형성하는 공정
JP6773944B2 (ja) * 2016-01-06 2020-10-21 ｉｎＱｓ株式会社 光発電素子
WO2018010680A1 (en) * 2016-07-14 2018-01-18 The Hong Kong Polytechnic University Rose petal textured haze film for photovoltaic cells
JP7372234B2 (ja) 2017-08-31 2023-10-31 ピルキントン グループ リミテッド コーティングされたガラス物品、その作製方法、およびそれにより作製された光電池
WO2019043399A1 (en) 2017-08-31 2019-03-07 Pilkington Group Limited CHEMICAL VAPOR DEPOSITION PROCESS FOR FORMING SILICON OXIDE COATING

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US4853257A (en) * 1987-09-30 1989-08-01 Ppg Industries, Inc. Chemical vapor deposition of tin oxide on float glass in the tin bath
US5030593A (en) * 1990-06-29 1991-07-09 Ppg Industries, Inc. Lightly tinted glass compatible with wood tones
US5030594A (en) * 1990-06-29 1991-07-09 Ppg Industries, Inc. Highly transparent, edge colored glass
US5240886A (en) * 1990-07-30 1993-08-31 Ppg Industries, Inc. Ultraviolet absorbing, green tinted glass
US5393593A (en) * 1990-10-25 1995-02-28 Ppg Industries, Inc. Dark gray, infrared absorbing glass composition and coated glass for privacy glazing
AU651754B2 (en) 1991-12-26 1994-07-28 Atofina Chemicals, Inc. Coated glass article
US5356718A (en) * 1993-02-16 1994-10-18 Ppg Industries, Inc. Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates
US5599387A (en) 1993-02-16 1997-02-04 Ppg Industries, Inc. Compounds and compositions for coating glass with silicon oxide
FR2703999B1 (fr) * 1993-04-16 1995-05-24 Rhone Poulenc Chimie Nouveaux pigments minéraux colorés à base de sulfures de terres rares, procédé de synthèse et utilisations.
US5536718A (en) 1995-01-17 1996-07-16 American Cyanamid Company Tricyclic benzazepine vasopressin antagonists
US5714199A (en) * 1995-06-07 1998-02-03 Libbey-Owens-Ford Co. Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
US6602606B1 (en) * 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
EP1624494A4 (en) * 2003-05-13 2007-10-10 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR A SOLAR BATTERY AND METHOD FOR THE PRODUCTION THEREOF
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US7431992B2 (en) * 2004-08-09 2008-10-07 Ppg Industries Ohio, Inc. Coated substrates that include an undercoating
JP3954085B2 (ja) * 2005-10-07 2007-08-08 シャープ株式会社 光電変換素子およびこれを用いた太陽電池
KR20080074086A (ko) * 2005-11-17 2008-08-12 아사히 가라스 가부시키가이샤 태양 전지용 투명 도전성 기판 및 그 제조 방법
US8097340B2 (en) * 2006-02-08 2012-01-17 Ppg Industries Ohio, Inc. Coated substrates having undercoating layers that exhibit improved photocatalytic activity
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu
CN101904013B (zh) 2007-12-19 2013-05-08 欧瑞康太阳能(处贝区市)公司 用于获得沉积于高度纹理化基板上的高性能薄膜装置的方法
JP5280708B2 (ja) * 2008-03-06 2013-09-04 シャープ株式会社 太陽電池モジュール

Also Published As

Publication number Publication date
WO2011084292A3 (en) 2011-09-09
TWI524539B (zh) 2016-03-01
KR20120096099A (ko) 2012-08-29
BR112012014980A2 (pt) 2016-04-05
US20110146767A1 (en) 2011-06-23
TW201138125A (en) 2011-11-01
CN102652365A (zh) 2012-08-29
RU2012131142A (ru) 2014-01-27
WO2011084292A2 (en) 2011-07-14
EP2517259A2 (en) 2012-10-31
MX2012006821A (es) 2012-07-23
JP2013515373A (ja) 2013-05-02
KR101511015B1 (ko) 2015-04-13
IN2012DN05184A (es) 2015-10-23
TR201908926T4 (tr) 2019-07-22
RU2526298C2 (ru) 2014-08-20
MY159272A (en) 2016-12-30
EP2517259B1 (en) 2019-04-17
JP5607180B2 (ja) 2014-10-15
US9224892B2 (en) 2015-12-29
TW201631785A (zh) 2016-09-01

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