MX346032B - Proceso para retirar capas duras de carbono. - Google Patents

Proceso para retirar capas duras de carbono.

Info

Publication number
MX346032B
MX346032B MX2013014404A MX2013014404A MX346032B MX 346032 B MX346032 B MX 346032B MX 2013014404 A MX2013014404 A MX 2013014404A MX 2013014404 A MX2013014404 A MX 2013014404A MX 346032 B MX346032 B MX 346032B
Authority
MX
Mexico
Prior art keywords
substrate
coating
vacuum chamber
low voltage
reactive gas
Prior art date
Application number
MX2013014404A
Other languages
English (en)
Other versions
MX2013014404A (es
Inventor
Ramm Jürgen
Widrig Beno
Original Assignee
Oerlikon Surface Solutions Ag Pfäffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfäffikon filed Critical Oerlikon Surface Solutions Ag Pfäffikon
Priority claimed from PCT/EP2012/002305 external-priority patent/WO2012167886A1/de
Publication of MX2013014404A publication Critical patent/MX2013014404A/es
Publication of MX346032B publication Critical patent/MX346032B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H01J37/32064—Circuits specially adapted for controlling the arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La invención se relaciona con un método para retirar las capas de carbono, en particular, las capas de ta-C, de las superficies de sustrato de las herramientas y de los componentes. El sustrato, del cual se retirará el recubrimiento, se coloca por consiguiente en un soporte de sustrato en una cámara de vacío, la cámara de vacío se carga con por lo menos un gas reactivo que ayuda a la evacuación del carbono en forma gaseosa y una descarga de plasma de bajo voltaje se crea en la cámara de vacío para activar el gas reactivo y, por lo tanto, para ayudar a la reacción o a las reacciones químicas requeridas para retirar el recubrimiento del sustrato recubierto. La descarga de plasma de bajo voltaje es una descarga de arco de DC de bajo voltaje, las superficies de sustrato, de las cuales se retirará el recubrimiento, se bombardearán sustancialmente de manera exclusiva con electrones y oxígeno, el nitrógeno y el hidrógeno se usan como el gas reactivo.
MX2013014404A 2011-06-07 2012-05-31 Proceso para retirar capas duras de carbono. MX346032B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011105654 2011-06-07
PCT/EP2012/002305 WO2012167886A1 (de) 2011-06-07 2012-05-31 Entschichtungsverfahren für harte kohlenstoffschichten

Publications (2)

Publication Number Publication Date
MX2013014404A MX2013014404A (es) 2014-09-25
MX346032B true MX346032B (es) 2017-03-02

Family

ID=51296766

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013014404A MX346032B (es) 2011-06-07 2012-05-31 Proceso para retirar capas duras de carbono.

Country Status (3)

Country Link
US (1) US9230778B2 (es)
MX (1) MX346032B (es)
MY (1) MY165291A (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114207178B (zh) * 2019-07-31 2024-06-04 欧瑞康表面处理解决方案股份公司普费菲孔 涂覆于基材上的梯级无氢碳基硬材料层
CN114645281B (zh) * 2022-04-06 2023-11-24 岭南师范学院 一种褪除金属工件表面碳膜的方法
CN121038082B (zh) * 2025-10-24 2026-01-27 成都光明南方光学科技有限责任公司 一种基于可变容积腔体的模具表面碳膜层的高效脱膜设备及脱膜方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59202116D1 (de) * 1991-04-23 1995-06-14 Balzers Hochvakuum Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer.
US5401543A (en) 1993-11-09 1995-03-28 Minnesota Mining And Manufacturing Company Method for forming macroparticle-free DLC films by cathodic arc discharge
DE4401986A1 (de) 1994-01-25 1995-07-27 Dresden Vakuumtech Gmbh Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür
CN1116451C (zh) 1996-08-15 2003-07-30 时至准钟表股份有限公司 导衬的内周面上形成的硬质碳膜的剥离方法
DE19831914A1 (de) 1998-07-16 2000-01-20 Laser & Med Tech Gmbh Verfahren und Vorrichtung zur Säuberung und Entschichtung transparenter Werkstücke
CN1138020C (zh) 1999-09-29 2004-02-11 永源科技股份有限公司 阴极电弧蒸镀方式淀积类金刚石碳膜的制备方法
US6902774B2 (en) 2002-07-25 2005-06-07 Inficon Gmbh Method of manufacturing a device
US7381311B2 (en) 2003-10-21 2008-06-03 The United States Of America As Represented By The Secretary Of The Air Force Filtered cathodic-arc plasma source
US7695763B2 (en) * 2004-01-28 2010-04-13 Tokyo Electron Limited Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate
WO2005073433A1 (de) 2004-01-29 2005-08-11 Unaxis Balzers Ag Entschichtungsverfahren und einkammeranlage zur durchführung des entschichtungsverfahrens
CN101308764B (zh) 2007-05-15 2011-03-23 中芯国际集成电路制造(上海)有限公司 消除蚀刻工序残留聚合物的方法
ES2764249T3 (es) 2008-05-02 2020-06-02 Oerlikon Surface Solutions Ag Pfaeffikon Procedimiento para decapar piezas de trabajo y solución de decapado
DE102008053254A1 (de) 2008-10-25 2010-04-29 Ab Solut Chemie Gmbh Verfahren zum substratschonenden Entfernen von Hartstoffschichten

Also Published As

Publication number Publication date
MY165291A (en) 2018-03-21
US20140224768A1 (en) 2014-08-14
US9230778B2 (en) 2016-01-05
MX2013014404A (es) 2014-09-25

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