MX9303393A - Metodo para producir monocristales grandes. - Google Patents

Metodo para producir monocristales grandes.

Info

Publication number
MX9303393A
MX9303393A MX9303393A MX9303393A MX9303393A MX 9303393 A MX9303393 A MX 9303393A MX 9303393 A MX9303393 A MX 9303393A MX 9303393 A MX9303393 A MX 9303393A MX 9303393 A MX9303393 A MX 9303393A
Authority
MX
Mexico
Prior art keywords
germ
diamond
crystal
master
mechanical
Prior art date
Application number
MX9303393A
Other languages
English (en)
Inventor
Miroslav Vichr
David Samuel Hoover
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of MX9303393A publication Critical patent/MX9303393A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Esta invención se refiere a un método para producir monocristales grandes. En una modalidad, se produce un monocristal de diamante de grado electrónico, que tiene un espesor de aproximadamente 100-1000 micras y un área sustancialmente mayor que 1 cm2, y que tiene una perfección cristalina elevada, el cual puede ser utilizado en las aplicaciones electrónicas, ópticas, mecánicas y otras. Una capa de diamante monocristalino, se deposita primero sobre un cristal germen maestro y las capas de diamante resultantes pueden ser separadas del cristal germen por medios físicos, mecánicos y químicos. La siembra o el germen maestro original puede ser renovado o reconstruido por crecimiento epitaxial para su uso repetido como cristal germen en subsiguientes operaciones. El germen de diamante de monocristales, maestro, grande, puede ser generado por una combinación de cristales germen más pequeños, orientados, por fusión epitaxial lateral. Puesto que no existe límite sobre cuantas veces se puede repetir el paso de la combinación del germen, se pueden fabricar plaquitas autoestables de diamante, grandes, comparables en tamaño a la plaquitas de silicio.
MX9303393A 1992-06-08 1993-06-07 Metodo para producir monocristales grandes. MX9303393A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/895,482 US5443032A (en) 1992-06-08 1992-06-08 Method for the manufacture of large single crystals

Publications (1)

Publication Number Publication Date
MX9303393A true MX9303393A (es) 1994-06-30

Family

ID=25404566

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9303393A MX9303393A (es) 1992-06-08 1993-06-07 Metodo para producir monocristales grandes.

Country Status (9)

Country Link
US (1) US5443032A (es)
EP (1) EP0573943B1 (es)
JP (1) JP2744576B2 (es)
KR (1) KR0120738B1 (es)
CA (1) CA2097472C (es)
DE (1) DE69305238T2 (es)
ES (1) ES2095517T3 (es)
MX (1) MX9303393A (es)
TW (1) TW302399B (es)

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CA2097472C (en) 1998-12-22
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EP0573943A1 (en) 1993-12-15
KR0120738B1 (ko) 1997-10-27
JP2744576B2 (ja) 1998-04-28
DE69305238T2 (de) 1997-02-13
US5443032A (en) 1995-08-22
JPH06183892A (ja) 1994-07-05
CA2097472A1 (en) 1993-12-09
KR940000612A (ko) 1994-01-03
TW302399B (es) 1997-04-11
ES2095517T3 (es) 1997-02-16

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