MX9703155A - Sistema y metodo de bomba captadora in situ. - Google Patents

Sistema y metodo de bomba captadora in situ.

Info

Publication number
MX9703155A
MX9703155A MX9703155A MX9703155A MX9703155A MX 9703155 A MX9703155 A MX 9703155A MX 9703155 A MX9703155 A MX 9703155A MX 9703155 A MX9703155 A MX 9703155A MX 9703155 A MX9703155 A MX 9703155A
Authority
MX
Mexico
Prior art keywords
chamber
processing
noble
wafer
gas
Prior art date
Application number
MX9703155A
Other languages
English (en)
Inventor
D Arcy Lorimer
Gordon P Krueger
Original Assignee
Saes Pure Gas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saes Pure Gas Inc filed Critical Saes Pure Gas Inc
Publication of MX9703155A publication Critical patent/MX9703155A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/02—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by absorption or adsorption
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/06—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means
    • F04B37/08—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Drying Of Semiconductors (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Un sistema procesador de discos, que incluye una cámara de proceso, una bomba de presion baja, acoplada a la cámara, para bombear gases nobles y no nobles, un mecanismo de válvula, que acopla una fuente del gas noble a la cámara de proceso, una bomba captadora in situ, dispuesta en la cámara de proceso, que bombea ciertos gases no nobles durante el flujo del gas noble en la cámara, y un mecanismo para procesar un disco dispuesto en la cámara de proceso. La bomba captadora in situ puede ser operada a diferentes temperaturas, para preferencialmente bombear diferentes especies de gas a esas temperaturas. Se usa un analizador de gas para controlar automáticamente la temperatura de la bomba captadora y controlar las especies de gases que se bombean desde la cámara. Un método para procesar un disco, segun la invencion incluye colocar este disco dentro de una cámara de proceso y sellar la misma, fluir un gas noble dentro de la cámara mientras bombea simultáneamente la cámara con una bomba externa de presion baja y con una bomba captadora in situ, dispuesta dentro de la cámara que bombea gases no nobles, y procesar el disco en de al cámara mientras continua el flujo del gas noble. El método también incluye las etapas de vigilar al composicion del gas dentro de la cámara y controlar la temperatura del material captador con base en el análisis de la composicion.
MX9703155A 1994-10-31 1995-10-30 Sistema y metodo de bomba captadora in situ. MX9703155A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/332,564 US5685963A (en) 1994-10-31 1994-10-31 In situ getter pump system and method
PCT/US1995/014154 WO1996013620A1 (en) 1994-10-31 1995-10-30 In situ getter pump system and method

Publications (1)

Publication Number Publication Date
MX9703155A true MX9703155A (es) 1997-12-31

Family

ID=23298801

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9703155A MX9703155A (es) 1994-10-31 1995-10-30 Sistema y metodo de bomba captadora in situ.

Country Status (15)

Country Link
US (4) US5685963A (es)
EP (1) EP0789788B1 (es)
JP (2) JP3943128B2 (es)
KR (1) KR100304449B1 (es)
CN (2) CN100363534C (es)
AT (1) ATE239107T1 (es)
AU (1) AU4140896A (es)
BR (1) BR9509456A (es)
CA (1) CA2203904C (es)
DE (1) DE69530603T2 (es)
MX (1) MX9703155A (es)
MY (1) MY114534A (es)
RU (1) RU2125619C1 (es)
TW (1) TW353706B (es)
WO (1) WO1996013620A1 (es)

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JP3943128B2 (ja) 2007-07-11
JPH10508078A (ja) 1998-08-04
JP4580943B2 (ja) 2010-11-17
US5685963A (en) 1997-11-11
EP0789788B1 (en) 2003-05-02
CN1177079C (zh) 2004-11-24
MY114534A (en) 2002-11-30
ATE239107T1 (de) 2003-05-15
RU2125619C1 (ru) 1999-01-27
US5879134A (en) 1999-03-09
KR100304449B1 (ko) 2001-09-29
DE69530603T2 (de) 2004-02-12
CN100363534C (zh) 2008-01-23
JP2007127130A (ja) 2007-05-24
BR9509456A (pt) 1997-09-16
US6165328A (en) 2000-12-26
TW353706B (en) 1999-03-01
AU4140896A (en) 1996-05-23
CA2203904A1 (en) 1996-05-09
CN1170441A (zh) 1998-01-14
CN1609447A (zh) 2005-04-27
CA2203904C (en) 2002-02-12
US5993165A (en) 1999-11-30
WO1996013620A1 (en) 1996-05-09
DE69530603D1 (de) 2003-06-05
EP0789788A1 (en) 1997-08-20
KR970707315A (ko) 1997-12-01

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