MY110261A - Bipolar bump transistor and method of manufacturing the same. - Google Patents

Bipolar bump transistor and method of manufacturing the same.

Info

Publication number
MY110261A
MY110261A MYPI90000429A MYPI19900429A MY110261A MY 110261 A MY110261 A MY 110261A MY PI90000429 A MYPI90000429 A MY PI90000429A MY PI19900429 A MYPI19900429 A MY PI19900429A MY 110261 A MY110261 A MY 110261A
Authority
MY
Malaysia
Prior art keywords
transistor
bump
bipolar
manufacturing
same
Prior art date
Application number
MYPI90000429A
Inventor
-Ing Klaus Paschke Phys
-Ing Roland Zippel Dipl
Original Assignee
Itt Ind Gmbh Deutsche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt Ind Gmbh Deutsche filed Critical Itt Ind Gmbh Deutsche
Publication of MY110261A publication Critical patent/MY110261A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)

Abstract

A BIPOLAR BUMP TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME ARE DISCLOSED IN WHICH THE BASE REGION (7) AND THE EMITTER REGION (8) ARE FORMED WITHIN A BOUNDRY DEFINED IN THE SUBSTRATE (1) BY THE COLLECTOR REGION (4), AND IN WHICH CONNECTIONS TO THE THREE AFOREMENTIONED ACTIVE REGIONS OF THE TRANSISTOR ARE MADE BY MEANS OF CONTACT BUMPS (11, 12, 13) DISPOSED ON THE SURFACE (31) OF THE SUBSTRATE (1).(FIG 2)
MYPI90000429A 1989-05-13 1990-03-20 Bipolar bump transistor and method of manufacturing the same. MY110261A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89108693A EP0397898B1 (en) 1989-05-13 1989-05-13 Bipolar Bump transistor and method for its manufacture

Publications (1)

Publication Number Publication Date
MY110261A true MY110261A (en) 1998-03-31

Family

ID=8201363

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI90000429A MY110261A (en) 1989-05-13 1990-03-20 Bipolar bump transistor and method of manufacturing the same.

Country Status (6)

Country Link
EP (1) EP0397898B1 (en)
JP (1) JPH033335A (en)
KR (1) KR0169471B1 (en)
DE (1) DE58908114D1 (en)
HK (1) HK93497A (en)
MY (1) MY110261A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444300A (en) * 1991-08-09 1995-08-22 Sharp Kabushiki Kaisha Semiconductor apparatus with heat sink
JP2913077B2 (en) * 1992-09-18 1999-06-28 シャープ株式会社 Semiconductor device
DE102004025773B4 (en) * 2004-05-26 2008-08-21 Siemens Ag Electronic component with thermally isolated areas

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475665A (en) * 1966-08-03 1969-10-28 Trw Inc Electrode lead for semiconductor active devices
US3997910A (en) * 1975-02-26 1976-12-14 Rca Corporation Semiconductor device with solder conductive paths
US4187599A (en) * 1975-04-14 1980-02-12 Motorola, Inc. Semiconductor device having a tin metallization system and package containing same
US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
NL8600021A (en) * 1986-01-08 1987-08-03 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING METALIZATION TO A SEMICONDUCTOR BODY

Also Published As

Publication number Publication date
EP0397898B1 (en) 1994-07-27
DE58908114D1 (en) 1994-09-01
HK93497A (en) 1997-08-01
JPH033335A (en) 1991-01-09
EP0397898A1 (en) 1990-11-22
KR900019257A (en) 1990-12-24
KR0169471B1 (en) 1999-01-15

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