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Application filed by Laser Tech Sdn BhdfiledCriticalLaser Tech Sdn Bhd
Priority to MYPI93002674ApriorityCriticalpatent/MY111639A/en
Publication of MY111639ApublicationCriticalpatent/MY111639A/en
THERE IS DISCLOSED AN IMPROVED METHOD OF MANUFACTURING SINGLE-CRYSTAL SILICON-ON-GLASS WAFERS AND SUBSTRATES BY DIRECT BONDING SILICON AND GALSS WAFERS TOGETHER WITHOUT USING ANY BONDING MATERIAL AND THEN THINNING DOWN SILICON BY GRINDING AND LAPPING TO FORM THIN SINGLE-CRYSTALLINE LAYER ON TOP OF GALSS WAFER OR SUBSTRATE.
MYPI93002674A1993-12-111993-12-11Method of manufacturing silicon-on-glass wafers and substrates
MY111639A
(en)
Etching solution for etching porous silicon etching method using the etching solution and method of preparing semiconductor member using the etching solution