MY123980A - Photoresist compositions comprising polycyclic polymers with acid labile pendant groups - Google Patents

Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Info

Publication number
MY123980A
MY123980A MYPI98004156A MYPI9804156A MY123980A MY 123980 A MY123980 A MY 123980A MY PI98004156 A MYPI98004156 A MY PI98004156A MY PI9804156 A MYPI9804156 A MY PI9804156A MY 123980 A MY123980 A MY 123980A
Authority
MY
Malaysia
Prior art keywords
acid labile
polymer
pendant groups
photoresist compositions
labile pendant
Prior art date
Application number
MYPI98004156A
Inventor
Brian L Goodall
Robert S Shick
Larry F Rhodes
Robert David Allen
Richard Anthony Dipietro
Thomas Wallow
Jayaraman Saikumar
Original Assignee
Ibm
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Sumitomo Bakelite Co filed Critical Ibm
Publication of MY123980A publication Critical patent/MY123980A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)

Abstract

THE PRESENT INVENTION RELATES TO A RADIATION SENSITIVE PHOTORESIST COMPOSITION COMPRISING A PHOTOACID INITIATOR AND A POLYCYCLIC POLYMER COMPRISING REPEATING UNITS THAT CONTAIN PENDANT ACID LABILE GROUPS. UPON EXPOSURE TO AN IMAGING RADIATION SOURCE THE PHOTOACID INITIATOR GENERATES AN ACID WHICH CLEAVES THE PENDANT ACID LABILE GROUPS EFFECTING A POLARITY CHANGE IN THE POLYMER. THE POLYMER IS RENDERED SOLUBLE IN AN AQUEOUS BASE IN THE AREAS EXPOSED TO THE IMAGING SOURCE.(FIGURE 1)
MYPI98004156A 1997-09-12 1998-09-10 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups MY123980A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92890097A 1997-09-12 1997-09-12

Publications (1)

Publication Number Publication Date
MY123980A true MY123980A (en) 2006-06-30

Family

ID=25456971

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI98004156A MY123980A (en) 1997-09-12 1998-09-10 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Country Status (10)

Country Link
EP (1) EP1021750A1 (en)
JP (1) JP4416941B2 (en)
KR (1) KR100572899B1 (en)
CN (1) CN1251021C (en)
AU (1) AU747516C (en)
ID (1) ID25549A (en)
MY (1) MY123980A (en)
RU (1) RU2199773C2 (en)
TW (1) TWI235285B (en)
WO (1) WO1999014635A1 (en)

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EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
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JP4544389B2 (en) * 2000-04-28 2010-09-15 信越化学工業株式会社 Polymer compound, resist material, and pattern forming method
JP3997381B2 (en) * 2000-04-28 2007-10-24 信越化学工業株式会社 Novel ester compound having alicyclic structure and process for producing the same
JP3997382B2 (en) * 2000-04-28 2007-10-24 信越化学工業株式会社 Novel ester compound having alicyclic structure and process for producing the same
TWI284782B (en) 2000-04-28 2007-08-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4626736B2 (en) * 2000-10-04 2011-02-09 Ｊｓｒ株式会社 Optically transparent material and liquid crystal display substrate material containing cyclic olefin copolymer
KR100555287B1 (en) * 2001-01-17 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 Ether, Polymer, Resist Composition and Patterning Process
US7037993B2 (en) * 2002-04-08 2006-05-02 Zeon Corporation Norbornene-based ring-opening polymerization polymer, product of hydrogenation of norbornene-based ring-opening polymerization polymer, and processes for producing these
KR100561068B1 (en) 2002-07-10 2006-03-15 주식회사 엘지화학 Norbornene-ester based addition polymer and method for preparing the same
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
AU2003246159A1 (en) * 2002-07-10 2004-02-02 Lg Chem, Ltd. Nobonene-ester based addition polymer and method for preparing the same
JP4242833B2 (en) 2002-07-10 2009-03-25 エルジー・ケム・リミテッド Method for producing norbornene-based addition polymer containing ester group or acetyl group
JP2007525543A (en) * 2003-02-20 2007-09-06 プロメラス， エルエルシー Dissolution rate modifier for photoresist compositions
US20070112158A1 (en) * 2003-11-18 2007-05-17 Jsr Corporation Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer
JP2006100563A (en) * 2004-09-29 2006-04-13 Sumitomo Bakelite Co Ltd Semiconductor device
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
JP4562784B2 (en) 2007-04-13 2010-10-13 富士フイルム株式会社 PATTERN FORMING METHOD, RESIST COMPOSITION, DEVELOPER AND RINSE SOLUTION USED FOR THE PATTERN FORMING METHOD
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
RU2439104C2 (en) * 2007-04-27 2012-01-10 Мицуи Кемикалз, Инк. Polymer composition and moulded article made from said composition
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
JP4558064B2 (en) 2007-05-15 2010-10-06 富士フイルム株式会社 Pattern formation method
JP4590431B2 (en) 2007-06-12 2010-12-01 富士フイルム株式会社 Pattern formation method
JP4617337B2 (en) 2007-06-12 2011-01-26 富士フイルム株式会社 Pattern formation method
KR20130114280A (en) 2007-06-12 2013-10-16 후지필름 가부시키가이샤 Resist composition for negative tone development and pattern forming method using the same
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP5332883B2 (en) * 2009-04-30 2013-11-06 住友ベークライト株式会社 Photosensitive composition, optical waveguide, optical wiring, opto-electric hybrid board, electronic device, and method for forming optical waveguide
RU2427016C1 (en) * 2010-03-03 2011-08-20 Закрытое акционерное общество "Институт прикладной нанотехнологии" Method of producing positive photoresist
JP6459192B2 (en) * 2014-03-20 2019-01-30 住友ベークライト株式会社 Photosensitive resin composition
KR102324819B1 (en) 2014-12-12 2021-11-11 삼성전자주식회사 Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices
KR101746789B1 (en) 2014-12-18 2017-06-13 주식회사 엘지화학 Vertical alignment layer comprising a cyclic olefin copolymer
GB201522304D0 (en) 2015-12-17 2016-02-03 Mars Inc Food product for reducing muscle breakdown
US12681384B2 (en) * 2022-10-31 2026-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition

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US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
JP3804138B2 (en) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 Radiation sensitive resin composition for ArF excimer laser irradiation
AU725653B2 (en) * 1996-03-07 2000-10-19 B.F. Goodrich Company, The Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR100261022B1 (en) * 1996-10-11 2000-09-01 윤종용 Chemically Amplified Resist Composition

Also Published As

Publication number Publication date
WO1999014635A1 (en) 1999-03-25
RU2199773C2 (en) 2003-02-27
TWI235285B (en) 2005-07-01
KR20010023940A (en) 2001-03-26
CN1276884A (en) 2000-12-13
HK1030992A1 (en) 2001-05-25
AU9219998A (en) 1999-04-05
JP2001516804A (en) 2001-10-02
ID25549A (en) 2000-10-12
EP1021750A1 (en) 2000-07-26
JP4416941B2 (en) 2010-02-17
CN1251021C (en) 2006-04-12
AU747516B2 (en) 2002-05-16
AU747516C (en) 2003-07-24
KR100572899B1 (en) 2006-04-24

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