MY130465A - Triple well flash memory cell and fabrication process - Google Patents

Triple well flash memory cell and fabrication process

Info

Publication number
MY130465A
MY130465A MYPI97002375A MYPI9702375A MY130465A MY 130465 A MY130465 A MY 130465A MY PI97002375 A MYPI97002375 A MY PI97002375A MY PI9702375 A MYPI9702375 A MY PI9702375A MY 130465 A MY130465 A MY 130465A
Authority
MY
Malaysia
Prior art keywords
memory cell
flash memory
fabrication process
triple well
well flash
Prior art date
Application number
MYPI97002375A
Inventor
Wang Arthur
Young Jein-Chen
Kwan Ming
Choi Iihyun
Original Assignee
Hyundai Electronics America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics America filed Critical Hyundai Electronics America
Publication of MY130465A publication Critical patent/MY130465A/en

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

A STRUCTURE FOR A FLASH MEMORY CELL IS DESCRIBED IN WHICH A TRIPLE WELL IS FORMED WITH THE MEMORY CELL RESIDING IN A P-WELL (24), WHICH IN TURN IS DEPOSED IN AN N-WELL (22) IN A PTYPE SUBSTRATE (20). THE STRUCTURE PROVIDES THE ABILITY TO OPERATE SUCH MEMORIES WITH CONSIDERABLY LOWER OPERATING POTENTIALS THAN PRIOR ART DEVICES. A PROCESS FOR FABRICATING THE FLASH MEMORY CELL IS ALSO DESCRIBED.(FIG 2A,2B)
MYPI97002375A 1996-05-30 1997-05-29 Triple well flash memory cell and fabrication process MY130465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1869496P 1996-05-30 1996-05-30

Publications (1)

Publication Number Publication Date
MY130465A true MY130465A (en) 2007-06-29

Family

ID=47289946

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI97002375A MY130465A (en) 1996-05-30 1997-05-29 Triple well flash memory cell and fabrication process

Country Status (3)

Country Link
KR (1) KR100362521B1 (en)
MY (1) MY130465A (en)
TW (1) TW346684B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114284285B (en) * 2021-06-02 2024-04-16 青岛昇瑞光电科技有限公司 NOR type semiconductor memory device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960012303B1 (en) * 1992-08-18 1996-09-18 삼성전자 주식회사 Nonvolatile semiconductor memory device and manufacturing method thereof
US5515319A (en) * 1993-10-12 1996-05-07 Texas Instruments Incorporated Non-volatile memory cell and level shifter
US5457652A (en) * 1994-04-01 1995-10-10 National Semiconductor Corporation Low voltage EEPROM
US5491657A (en) * 1995-02-24 1996-02-13 Advanced Micro Devices, Inc. Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells

Also Published As

Publication number Publication date
TW346684B (en) 1998-12-01
KR100362521B1 (en) 2003-01-29

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