MY132660A - Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method - Google Patents

Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method

Info

Publication number
MY132660A
MY132660A MYPI20021666A MYPI20021666A MY132660A MY 132660 A MY132660 A MY 132660A MY PI20021666 A MYPI20021666 A MY PI20021666A MY PI20021666 A MYPI20021666 A MY PI20021666A MY 132660 A MY132660 A MY 132660A
Authority
MY
Malaysia
Prior art keywords
manufacturing
possessed
alternating current
testing
test method
Prior art date
Application number
MYPI20021666A
Inventor
Hiroki Masaaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of MY132660A publication Critical patent/MY132660A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A SIMPLIFIED TEST METHOD IS ESTABLISHED NOT TO USE A PROBE ON THE INTERCONNECTION, AND A TEST APPARATUS IS PROVIDED WHICH USES THE TEST METHOD.THE PRIMARY COIL (206) POSSESSED BY A TESTING SUBSTRATE AND THE SECONDARY COIL (207) POSSESSED BY AN OLED PANEL ARE SUPERPOSED TOGETHER THROUGH A CONSTANT SPACING. AN ALTERNATING CURRENT SIGNAL IS INPUTTED TO THE PRIMARY COIL (206) TO GENERATE AN ELECTROMOTIVE FORCE ON THE SECONDARY COIL (207) DUE TO ELECTROMAGNETIC INDUCTION. BY USING THE ELECTROMOTIVE FORCE, THE PIXEL POSSESSED BY THE OLED PANEL IS OPERATED. A PIXEL ELECTRODE (208) AND A TESTING ELECTRODE (104) ARE SUPERPOSED TOGETHER THROUGH A CONSTANT SPACING. BY MONITORING AN ALTERNATING CURRENT VOLTAGE GENERATED ON THE TESTING ELECTRODE, A FAULTY POINT IS DETECTED: FURTHERMORE, AN OPERATING STATE OF EACH PIXEL MAY BE CONFIRMED BY MONITORING AN ALTERNATING CURRENT VOLTAGE GENERATED ON THE TESTING ELECTRODE (104) WHILE CHANGING THE POSITION OF THE TESTING ELECTRODE (104).(FIG 1)
MYPI20021666A 2001-05-15 2002-05-08 Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method MY132660A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001145060 2001-05-15
JP2001223647 2001-07-24

Publications (1)

Publication Number Publication Date
MY132660A true MY132660A (en) 2007-10-31

Family

ID=26615116

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20021666A MY132660A (en) 2001-05-15 2002-05-08 Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method

Country Status (5)

Country Link
KR (1) KR100873181B1 (en)
CN (1) CN1274014C (en)
MY (1) MY132660A (en)
SG (2) SG132529A1 (en)
TW (1) TW573128B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4394980B2 (en) * 2004-01-30 2010-01-06 日本電産リード株式会社 Substrate inspection apparatus and substrate inspection method
KR101270180B1 (en) * 2004-01-30 2013-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 An inspection apparatus, inspenction method, and method for manufacturing a semiconductor device
US7466157B2 (en) * 2004-02-05 2008-12-16 Formfactor, Inc. Contactless interfacing of test signals with a device under test
TWI391685B (en) 2009-10-16 2013-04-01 Ind Tech Res Inst Station for detecting winding products and method for detecting inter-turn short-circuit
TWI481300B (en) * 2009-12-31 2015-04-11 Univ Tsinghua Organic electroluminescent devices and their test methods
WO2013012616A2 (en) 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
US9379029B2 (en) * 2012-07-18 2016-06-28 Toyota Jidosha Kabushiki Kaisha Inspection apparatus, inspection system, inspection method of semiconductor devices, and manufacturing method of inspected semiconductor devices
KR102043179B1 (en) 2013-02-18 2019-11-12 삼성디스플레이 주식회사 Detecting method of defect of barrier film and detecting apparatus of defect of barrier film for flat panel display device
TWI730591B (en) * 2020-01-15 2021-06-11 興城科技股份有限公司 Inspection equipment for glass substrate and method thereof
KR102410310B1 (en) * 2021-05-03 2022-06-22 (주) 엔지온 Measuring unit of electrical characteristic of semiconductor an apparatus for measuring electrical characteristic of semiconductor and a method for using the same
US12000866B2 (en) 2022-04-20 2024-06-04 Envigth Co., Ltd. Detection unit, semiconductor film layer inspection apparatus including the same, and semiconductor film layer inspection method using the same
KR102811605B1 (en) * 2022-11-09 2025-05-21 한국기계연구원 Apparatus for inspecting defect of self-light emitting diode using non-contact electroluminescence

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2803943B2 (en) * 1992-10-21 1998-09-24 アルプス電気株式会社 Non-contact power supply
US5428300A (en) * 1993-04-26 1995-06-27 Telenix Co., Ltd. Method and apparatus for testing TFT-LCD
JPH06349913A (en) * 1993-06-14 1994-12-22 Fujitsu Ltd Non-contact monitoring method for burn-in test
JP3269225B2 (en) * 1993-11-17 2002-03-25 横河電機株式会社 Print coil tester
JP2909807B2 (en) * 1995-11-22 1999-06-23 セイコーインスツルメンツ株式会社 Superconducting quantum interference device magnetometer and non-destructive inspection device
JP3328553B2 (en) * 1997-07-25 2002-09-24 松下電器産業株式会社 Circuit board inspection equipment
JP4075138B2 (en) * 1998-06-05 2008-04-16 凸版印刷株式会社 Non-contact IC card inspection device and inspection method
JP2000258482A (en) * 1999-03-08 2000-09-22 Toshiba Corp Frequency inspection device
JP2001133487A (en) * 1999-11-01 2001-05-18 Mitsubishi Heavy Ind Ltd Potential sensor
JP2001194405A (en) * 2000-01-07 2001-07-19 Oht Kk Probe for inspecting substrate and inspection/method for substrate
KR100324138B1 (en) * 2000-02-07 2002-02-20 은탁 Inspection apparatus and method adapted to a scanning technique employing a capacitance gap sensor probe

Also Published As

Publication number Publication date
CN1387246A (en) 2002-12-25
CN1274014C (en) 2006-09-06
SG105545A1 (en) 2004-08-27
KR100873181B1 (en) 2008-12-10
KR20020087376A (en) 2002-11-22
TW573128B (en) 2004-01-21
SG132529A1 (en) 2007-06-28

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