MY135361A - Machining substrates, particularly semiconductor wafers - Google Patents
Machining substrates, particularly semiconductor wafersInfo
- Publication number
- MY135361A MY135361A MYPI20031530A MY135361A MY 135361 A MY135361 A MY 135361A MY PI20031530 A MYPI20031530 A MY PI20031530A MY 135361 A MY135361 A MY 135361A
- Authority
- MY
- Malaysia
- Prior art keywords
- semiconductor wafers
- substrate
- particularly semiconductor
- formation
- predetermined depth
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 235000012431 wafers Nutrition 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000003754 machining Methods 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000608 laser ablation Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A FORMATION (8) IN A FIRST OF A SUBSTRATE (5) IS MACHINED BY AN ULTRAVIOLET OR VISIBLE RADIATION LASER(9), TO A PREDETERMINED DEPTH THAT IS LESS THAN A FULL DEPTH OF THE SUBSTRATE; AND A MATERIAL IS REMOVED FROM A SECOND SURFACE OF THE SUBSTRATE OPPOSED TO THE FIRST SURFACE TO THE PREDETERMINED DEPTH FROM THE FIRST SURFACE TO COMMUNICATE WITH THE FORMATION. MATERIAL MAY BE REMOVED BY, FOR EXAMPLE, LAPPING AND POLISHING,CHEMICAL ECTHING,PLASMA ETCHING OR LASER ABLATION. THE INVENTION HAS APPLICATION IN, FOR EXAMPLE, DICING SEMICONDUCTOR WAFERS (1) OR FORMING METALLISED VIAS (10) IN WAFERS(1).FIG. 4(A),4(B),AND 4(C)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IE2002/0315A IE83726B1 (en) | 2002-04-26 | Machining of semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY135361A true MY135361A (en) | 2008-03-31 |
Family
ID=29227388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20031530 MY135361A (en) | 2002-04-26 | 2003-04-23 | Machining substrates, particularly semiconductor wafers |
Country Status (2)
| Country | Link |
|---|---|
| MY (1) | MY135361A (en) |
| TW (1) | TWI224370B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
| CN113070563B (en) * | 2021-04-19 | 2022-07-19 | 重庆科技学院 | Welding process and equipment for aerospace thick-wall pipe |
-
2003
- 2003-04-23 MY MYPI20031530 patent/MY135361A/en unknown
- 2003-04-24 TW TW92109598A patent/TWI224370B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200305945A (en) | 2003-11-01 |
| IE20020315A1 (en) | 2003-10-29 |
| TWI224370B (en) | 2004-11-21 |
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