MY136579A - Acid-sensitive copolymer and uses thereof - Google Patents

Acid-sensitive copolymer and uses thereof

Info

Publication number
MY136579A
MY136579A MYPI20040816A MYPI20040816A MY136579A MY 136579 A MY136579 A MY 136579A MY PI20040816 A MYPI20040816 A MY PI20040816A MY PI20040816 A MYPI20040816 A MY PI20040816A MY 136579 A MY136579 A MY 136579A
Authority
MY
Malaysia
Prior art keywords
linear
carbon atoms
alkyl group
branched
indicates
Prior art date
Application number
MYPI20040816A
Inventor
Shigeo Makino
Hidenobu Morimoto
Kiyomi Yasuda
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of MY136579A publication Critical patent/MY136579A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

THE PRESENT INVENTION PROVIDES A POSITIVE TYPE PHOTOSENSITIVE RESIST COMPOSITION IN WHICH A HIGHLY SENSITIVE AND INEXPENSIVE PHOTO-ACID-GENERATOR CAN BE USED, AND WHICH CAN BE EXPOSED USING NEAR ULTRAVIOLET LIGHT AND DEVELOPED WITH A WEAK ALKALI, HAS A HIGH RESOLUTION, AND CAN BE ADAPTED TO SUBSTRATES THAT HAVE THROUGH-HOLES.THE PRESENT INVENTION IS A POSITIVE TYPE PHOTOSENSITIVE RESIST COMPOSITION COMPRISING AN ACID-SENSITIVE COPOLYMER WHICH COMPRISES A FIRST CONSTITUTIONAL UNIT EXPRESSED BY THE FOLLOWING GENERAL FORMULA (1)(IN FORMULA (1), X INDICATES A HYDROGEN ATOM OR A METHYL 15 GROUP),A SECOND CONSTITUTIONAL UNIT EXPRESSED BY THE FOLLOWING GENERAL FORMULA (2) (IN FORMULA (2),R¹ INDICATES A HYDROGEN ATOM OR A METHYL GROUP,R² INDICATES A LINEAR OR BRANCHED UNSUBSTITUTED ALKYL GROUP WITH1 TO 6 CARBON ATOMS,A LINEAR OR BRANCHED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS THAT IS SUBSTITUTED BY A HYDROXY GROUP, A LINEAR OR BRANCHED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS THAT IS SUBSTITUTED BY A HALOGEN ATOM,A LINEAR OR BRANCHED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS THAT IS SUBSTITUTED BY A CYANO GROUP A LINEAR OR BRANCHED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS THAT IS SUBSTITUTED BY A DIALKYLAMINO GROUP),AND A THIRD CONSTITUTIONAL UNIT EXPRESSED BY THE FOLLOWING GENERAL FORMULA (3) (IN FORMULA (3) R³ INDICATES A HYDROGEN ATOMS OR A METHYL OR A METHYL GROUP,R⁴ INDICATES A HYDROGEN ATOM,A HALOGEN ATOM OR LINEAR OR BRANCHED UNSUBSTITUTED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS.Y INDICATES A HYDROGEN ATOM,A LINEAR OR BRANCHED UNSUBSTITUTED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS OR A LINEAR OR BRANCHED SUBSTITUTED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS,Z INDICATES A LINEAR OR BRANCHED UNSUBSTITUTED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS OR A LINEAR OR BRANCHED SUBSTITUTED ALKYL GROUP WITH 1 TO 6 CARBON ATOMS,AND Y MAY ALSO BE BONDED TO Z TO FORM A RING SYSTEM.
MYPI20040816A 2003-03-10 2004-03-10 Acid-sensitive copolymer and uses thereof MY136579A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003062783 2003-03-10

Publications (1)

Publication Number Publication Date
MY136579A true MY136579A (en) 2008-10-31

Family

ID=32984411

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20040816A MY136579A (en) 2003-03-10 2004-03-10 Acid-sensitive copolymer and uses thereof

Country Status (6)

Country Link
JP (1) JPWO2004081065A1 (en)
KR (1) KR100714811B1 (en)
CN (1) CN1980962A (en)
MY (1) MY136579A (en)
TW (1) TWI246635B (en)
WO (1) WO2004081065A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006003861A (en) * 2004-05-19 2006-01-05 Mitsui Chemicals Inc Positive photosensitive resist composition and method for preparing the same
JP2007146022A (en) * 2005-11-29 2007-06-14 Daicel Chem Ind Ltd Method for producing resin solution for photoresist
JP2007163772A (en) * 2005-12-13 2007-06-28 Kansai Paint Co Ltd Circuit board positive resist composition, circuit board positive dry film, and circuit board manufacturing method using the same
JP2007163767A (en) * 2005-12-13 2007-06-28 Kansai Paint Co Ltd Circuit board positive resist composition, circuit board positive dry film, and circuit board manufacturing method using the same
TW200736837A (en) * 2005-12-13 2007-10-01 Kansai Paint Co Ltd Positive-type photoresist composition for circuit board, positive-type dry film for circuit board, and manufacturing method of circuit board using the same
JP5260094B2 (en) * 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Phenolic polymer and photoresist containing the same
JP5850873B2 (en) * 2012-07-27 2016-02-03 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern formation method, and electronic device manufacturing method
JP2017181895A (en) * 2016-03-31 2017-10-05 東京応化工業株式会社 Chemical amplification type positive photosensitive resin composition
JP6893550B2 (en) * 2017-03-30 2021-06-23 富士フイルム株式会社 Manufacturing method of photosensitive transfer material and circuit wiring
WO2023182649A1 (en) * 2022-03-21 2023-09-28 주식회사 엘지에너지솔루션 Lithium secondary battery having suppressed metal elution

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210642A (en) * 1985-07-09 1987-01-19 Sony Corp Photosensitive resin composition
JP2603148B2 (en) * 1990-06-08 1997-04-23 三菱電機株式会社 Pattern formation method
JPH08101507A (en) * 1994-09-30 1996-04-16 Japan Synthetic Rubber Co Ltd Radiation-sensitive resin composition
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
JP4380075B2 (en) * 2001-03-23 2009-12-09 日本ゼオン株式会社 Resist composition and use thereof
JP2004053617A (en) * 2001-07-09 2004-02-19 Mitsui Chemicals Inc Positive photosensitive resist composition and its use

Also Published As

Publication number Publication date
TWI246635B (en) 2006-01-01
JPWO2004081065A1 (en) 2006-06-08
CN1980962A (en) 2007-06-13
WO2004081065A1 (en) 2004-09-23
KR20050109508A (en) 2005-11-21
TW200428148A (en) 2004-12-16
KR100714811B1 (en) 2007-05-04

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