MY141022A - Compositions for the electroless deposition of ternary materials for the semiconductor industry - Google Patents

Compositions for the electroless deposition of ternary materials for the semiconductor industry

Info

Publication number
MY141022A
MY141022A MYPI20041657A MYPI20041657A MY141022A MY 141022 A MY141022 A MY 141022A MY PI20041657 A MYPI20041657 A MY PI20041657A MY PI20041657 A MYPI20041657 A MY PI20041657A MY 141022 A MY141022 A MY 141022A
Authority
MY
Malaysia
Prior art keywords
compositions
semiconductor industry
electroless deposition
ternary materials
deposited
Prior art date
Application number
MYPI20041657A
Inventor
Alexandra Dr Wirth
Original Assignee
Basf Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Ag filed Critical Basf Ag
Publication of MY141022A publication Critical patent/MY141022A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

THE PRESENT INVENTION RELATES TO THE USE OF TERNARY NICKEL-CONTAINING METAL ALLOYS OF THE NIMR TYPE (WHERE M = MO, W, RE OR CR, AND R = B OR P) DEPOSITED BY AN ELECTROLESS PROCESS IN SEMICONDUCTOR TECHNOLOGY. IN PARTICULAR, THE PRESENT INVENTION RELATES TO THE USE OF THESE DEPOSITED TERNARY NICKEL-CONTAINING METAL ALLOYS AS BARRIER MATERIAL OR AS SELECTIVE ENCAPSULATION MATERIAL FOR PREVENTING THE DIFFUSION AND ELECTROMIGRATION OF COPPER IN SEMICONDUCTOR COMPONENTS.
MYPI20041657A 2003-05-09 2004-05-05 Compositions for the electroless deposition of ternary materials for the semiconductor industry MY141022A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10321113 2003-05-09
DE10347809A DE10347809A1 (en) 2003-05-09 2003-10-10 Compositions for electroless deposition of ternary materials for the semiconductor industry

Publications (1)

Publication Number Publication Date
MY141022A true MY141022A (en) 2010-02-25

Family

ID=33394463

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20041657A MY141022A (en) 2003-05-09 2004-05-05 Compositions for the electroless deposition of ternary materials for the semiconductor industry

Country Status (4)

Country Link
CN (1) CN1784507B (en)
DE (1) DE10347809A1 (en)
MY (1) MY141022A (en)
TW (1) TWI342591B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101889333B (en) * 2007-12-17 2012-08-08 日矿金属株式会社 Substrate and method for manufacturing the same
US20100310775A1 (en) 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
TWI550643B (en) * 2012-03-30 2016-09-21 Taiyo Holdings Co Ltd Conductive paste and conductive circuit
CN102925861A (en) * 2012-11-20 2013-02-13 大连理工大学 Cu-Ni-Sn alloy film with high conductivity and high thermal stability and its preparation process
EP3172761B1 (en) * 2014-07-25 2021-09-22 Intel Corporation Tungsten alloys in semiconductor devices
CN104328392A (en) * 2014-10-30 2015-02-04 广东电网有限责任公司电力科学研究院 Coating type chemical plating method based on low-temperature plating liquid
CN107104076B (en) * 2016-09-18 2019-02-05 云南大学 A method for preparing ULSI-Cu wiring diffusion barrier NiCoB film by electroless plating
CN113026005B (en) * 2021-03-04 2022-02-01 珠海市创智成功科技有限公司 Chemical plating solution and process applied to chemical nickel-palladium-gold plating layer of flexible circuit board

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001355074A (en) * 2000-04-10 2001-12-25 Sony Corp Electroless plating method and apparatus
US6528409B1 (en) * 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration

Also Published As

Publication number Publication date
TW200512833A (en) 2005-04-01
CN1784507B (en) 2010-04-28
DE10347809A1 (en) 2004-11-25
TWI342591B (en) 2011-05-21
CN1784507A (en) 2006-06-07

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