MY141288A - Lead frame for semiconductor package - Google Patents

Lead frame for semiconductor package

Info

Publication number
MY141288A
MY141288A MYPI20061703A MYPI20061703A MY141288A MY 141288 A MY141288 A MY 141288A MY PI20061703 A MYPI20061703 A MY PI20061703A MY PI20061703 A MYPI20061703 A MY PI20061703A MY 141288 A MY141288 A MY 141288A
Authority
MY
Malaysia
Prior art keywords
lead frame
base metal
plating
plating layer
layer
Prior art date
Application number
MYPI20061703A
Inventor
Sung-Il Kang
Se-Chuel Park
Original Assignee
Samsung Techwin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Techwin Co Ltd filed Critical Samsung Techwin Co Ltd
Publication of MY141288A publication Critical patent/MY141288A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02F—DREDGING; SOIL-SHIFTING
    • E02F9/00—Component parts of dredgers or soil-shifting machines, not restricted to one of the kinds covered by groups E02F3/00 - E02F7/00
    • E02F9/02—Travelling-gear, e.g. associated with slewing gears
    • E02F9/022—Travelling-gear, e.g. associated with slewing gears for moving on rails
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02F—DREDGING; SOIL-SHIFTING
    • E02F9/00—Component parts of dredgers or soil-shifting machines, not restricted to one of the kinds covered by groups E02F3/00 - E02F7/00
    • E02F9/20—Drives; Control devices
    • E02F9/2058—Electric or electro-mechanical or mechanical control devices of vehicle sub-units
    • E02F9/2062—Control of propulsion units
    • E02F9/207—Control of propulsion units of the type electric propulsion units, e.g. electric motors or generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • Civil Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A LEAD FRAME FOR A SEMICONDUCTOR PACKAGE HAVING NOT ONLY HIGH MOLDING RESIN ADHESIVENESS AND A LOW DELAMINATION PROBLEM UNDER A SEVERE MOISTURE ABSORBING ATMOSPHERE BUT ALSO HIGH INTERFACE ADHESIVENESS AND SOLDER WETTABILITY OF AN AU WIRE, AND A METHOD OF MANUFACTURING THE LEAD FRAME ARE PROVIDED. THE LEAD FRAME INCLUDES A BASE METAL LAYER FORMED OF A METAL AND A PLURALITY OF PLATING LAYERS HAVING DIFFERENT COMPONENTS FORMED ON AT LEAST A SURFACE OF THE BASE METAL LAYER, WHEREIN THE PLATING LAYERS INCLUDE, A NI PLATING LAYER DEPOSITED ON AT LEAST A SURFACE OF THE BASE METAL A LEAD FRAME FOR A SEMICONDUCTOR PACKAGE HAVING NOT ONLY HIGH MOLDING RESIN ADHESIVENESS AND A LOW DELAMINATION PROBLEM UNDER A SEVERE MOISTURE ABSORBING ATMOSPHERE BUT ALSO HIGH INTERFACE ADHESIVENESS AND SOLDER WETTABILITY OF AN AU WIRE, AND A METHOD OF MANUFACTURING THE LEAD FRAME ARE PROVIDED. THE LEAD FRAME INCLUDES A BASE METAL LAYER (21) FORMED OF A METAL AND A PLURALITY OF PLATING LAYERS (122, 125; 122A, 125, 122B) HAVING DIFFERENT COMPONENTS FORMED ON AT LEAST A SURFACE OF THE BASE METAL LAYER, WHEREIN THE PLATING LAYERS INCLUDE, A NI PLATING LAYER DEPOSITED ON AT LEAST A SURFACE OF THE BASE METAL LAYER AND FORMED OF NI OR AN NI ALLOY, A PD PLATING LAYER (123) STACKED ON AT LEAST A SURFACE OF THE NI PLATING LAYER AND FORMED OF PD OR A PD ALLOY, AND A PROTECTION PLATING LAYER (124) STACKED ON AT LEAST A SURFACE OF THE PD PLATING LAYER AND FORMED OF AU OR AN AU ALLOY, WHEREIN THE NI PLATING LAYER IS FORMED TO HAVE A PREDETERMINED A THICKNESS AND A SURFACE COARSENESS.
MYPI20061703A 2005-04-15 2006-04-13 Lead frame for semiconductor package MY141288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050031420A KR100819800B1 (en) 2005-04-15 2005-04-15 Lead Frames for Semiconductor Packages

Publications (1)

Publication Number Publication Date
MY141288A true MY141288A (en) 2010-04-16

Family

ID=37055660

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20061703A MY141288A (en) 2005-04-15 2006-04-13 Lead frame for semiconductor package

Country Status (7)

Country Link
US (1) US7285845B2 (en)
JP (1) JP2006303492A (en)
KR (1) KR100819800B1 (en)
CN (1) CN100527404C (en)
DE (1) DE102006017042B4 (en)
MY (1) MY141288A (en)
TW (1) TWI397981B (en)

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KR100989802B1 (en) * 2006-11-29 2010-10-29 유니마이크론 테크놀로지 코퍼레이션 Support substrate laminated structure with semiconductor element embedded and manufacturing method
CN100464416C (en) * 2007-04-29 2009-02-25 江苏长电科技股份有限公司 Packaging method for preventing delamination of components in semiconductor plastic package
CN100466245C (en) * 2007-04-29 2009-03-04 江苏长电科技股份有限公司 A packaging method that effectively improves the delamination of components in semiconductor plastic packages
CN100483705C (en) * 2007-04-29 2009-04-29 江苏长电科技股份有限公司 Method against device lamination inside semiconductor plastic packer
KR101289803B1 (en) 2008-05-16 2013-07-26 삼성테크윈 주식회사 Circuit board and method of manufacturing the same
KR101241735B1 (en) * 2008-09-05 2013-03-08 엘지이노텍 주식회사 Lead frame and method for manufacturing the same
JP4853508B2 (en) * 2008-11-05 2012-01-11 住友金属鉱山株式会社 Lead frame manufacturing method
KR101426038B1 (en) 2008-11-13 2014-08-01 주식회사 엠디에스 Printed circuit board and method of manufacturing the same
TWI359714B (en) * 2008-11-25 2012-03-11 Univ Yuan Ze Method for inhibiting the formation of palladium-n
KR101072233B1 (en) * 2009-03-17 2011-10-12 엘지이노텍 주식회사 Structure for semiconductor package and manufacturing method thereof
US8304868B2 (en) 2010-10-12 2012-11-06 Texas Instruments Incorporated Multi-component electronic system having leadframe with support-free with cantilever leads
KR101175982B1 (en) * 2011-06-29 2012-08-23 엘지이노텍 주식회사 Structure for multi-row lead frame and manufacturing method thereof
JP5408457B2 (en) * 2011-09-02 2014-02-05 住友金属鉱山株式会社 Lead frame manufacturing method
CN102817055B (en) * 2012-08-15 2015-03-25 中山品高电子材料有限公司 Ultrathin palladium plating and gold plating process for lead wire frame
KR101802851B1 (en) 2013-03-11 2017-11-29 해성디에스 주식회사 Lead frame, semiconductor package including the lead frame, and method of manufacturing the lead frame
MY181753A (en) 2013-05-03 2021-01-06 Honeywell Int Inc Lead frame construct for lead-free solder connections
TWI565100B (en) * 2014-01-28 2017-01-01 林俊明 An electronic component bracket with a roughened surface
DE102014211298A1 (en) 2014-06-13 2015-12-17 Robert Bosch Gmbh Substrate with a surface coating and method for coating a surface of a substrate
DE102016117389B4 (en) * 2015-11-20 2020-05-28 Semikron Elektronik Gmbh & Co. Kg Power semiconductor chip and method for producing a power semiconductor chip and power semiconductor device
JP6724851B2 (en) 2017-04-14 2020-07-15 株式会社デンソー Base material, mold package using the same, base material manufacturing method, and mold package manufacturing method
CN111557043B (en) * 2018-03-23 2024-09-17 古河电气工业株式会社 Lead frame material and method for manufacturing the same, and semiconductor package using the same
WO2020217787A1 (en) * 2019-04-22 2020-10-29 Ｎｇｋエレクトロデバイス株式会社 Metal member and production method therefor
US12428744B2 (en) 2022-09-26 2025-09-30 Rohm And Haas Electronic Materials Llc Nickel electroplating compositions for rough nickel
US12410534B2 (en) 2022-09-26 2025-09-09 Dupont Electronic Materials International, Llc Nickel electroplating compositions for rough nickel
KR102795669B1 (en) * 2023-06-22 2025-04-16 해성디에스 주식회사 Lead frame and method for manufacturing the lead frame

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Also Published As

Publication number Publication date
CN100527404C (en) 2009-08-12
US20060231931A1 (en) 2006-10-19
TWI397981B (en) 2013-06-01
KR100819800B1 (en) 2008-04-07
KR20060109122A (en) 2006-10-19
US7285845B2 (en) 2007-10-23
DE102006017042A1 (en) 2006-10-19
DE102006017042B4 (en) 2014-06-26
CN1848420A (en) 2006-10-18
JP2006303492A (en) 2006-11-02
TW200636963A (en) 2006-10-16

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